US4963507A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method and manufacturing a laser diode with buried active layer
Assignee: Siemens AG
•
Filing: 1988-04-27
•
Granted: 1990-10-16
•
Expires: 2008-04-27
Abstract
Abstract In the manufacture of laser diodes having a stripe-shaped, active layer, a problem arises upon application of lateral layers, particularly of blocking pn-junctions for lateral current conduction, in that these layers are undesired above the active layer. By applying a protective cover layer that will dissolve in super-cooled melts of the material of the lateral layers, before the growth of the lateral layers, the growth of the lateral layers, particularly blocking pn-junctions, above the active stripe is avoided since the cover layer dissolves in the melt given epitaxial application of the lateral layers.
Inventors
- 👤 Markus-Christian Amann
- 👤 Wolfgang Thulke
- 👤 Gerhard Baumann
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 10:52
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/227; H01S5/2275; Y; Y10; Y10S; Y10S148/00; Y10S148/099; Y10S148/101
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
171 words
A method for manufacturing a laser diode with buried active layer and with metal contacts on the opposite sides of the layer format, proceeding on the basis of a double heterolayer structure that contains at least one substrate of a first semiconductor material, an active layer of a second semiconductor material that has a higher refractive index and a smaller energy band gap than the first semiconductor material, and contains an upper layer of the first semiconductor material, comprising the following steps: (a) applying a cover layer of a third semiconductor material that will dissolve in super-cooled melts of the first semiconductor material on the double hetero-layer structure on the upper layer; (b) defining a stripe by laterally etching the cover layer, the upper layer, and the active layer off down into the substrate; and (c) applying, by liquid phase epitaxy, a plurality of layers of the first semiconductor material at the side of the stripe at least up to the height of the stripe, causing the cover layer to dissolve.
Claim 2
Independent Claim
171 words
A method for manufacturing a laser diode with buried active layer and with metal contacts on the opposite sides of the layer format, proceeding on the basis of a double heterolayer structure that contains at least one substrate of a first semiconductor material, an active layer of a second semiconductor material that has a higher refractive index and a smaller energy band gap than the first semiconductor material, and contains an upper layer of the first semiconductor material, comprising the following steps: (a) applying a cover layer of a third semiconductor material that will dissolve in super-cooled melts of the first semiconductor material on the double hetero-layer structure on the upper layer; (b) defining a stripe by laterally etching the cover layer, the upper layer, and the active layer off down into the substrate; and (c) applying, by liquid phase epitaxy, a plurality of layers of the first semiconductor material at the side of the stripe at least up to the height of the stripe, causing the cover layer to dissolve.
Claim 3
Dependent Claim
29 words
The method of claim 1 wherein: InP is employed as first semiconductor material; and In 1-x Ga x As y P 1-y is employed as the third semiconductor material.
Claim 4
Dependent Claim
15 words
The method of claim 2 wherein x and y are such that: 1≧x≧0.35; and 1≧y≧0.
Claim 5
Dependent Claim
38 words
The method of claim 1 wherein a layer sequence is applied at the side of the stripe having such dopings that barrier layers are formed at both sides of the active stripe during operation of the laser diode.
Claim 6
Dependent Claim
20 words
The method of claim 1 wherein the wafer is grown over with a layer upon application of the lateral layers.
Claim 7
Dependent Claim
41 words
The method of claim 1 including the step of improving contact resistance of the metal contact by applying a layer of the second semiconductor material under the metal contact at that side of the layer format facing away from the substrate.
Claim 8
Dependent Claim
46 words
The method of claim 1 including the step of improving lateral current conduction by applying an insulator layer under the metal contact at the side of the stripe of the active layer, being applied at that side of the layer format facing away from the substrate.
Claim 9
Dependent Claim
14 words
The method of claim 1 wherein three layers are applied by liquid phase epitaxy.
Claim 10
Independent Claim
161 words
A method for manufacturing a laser diode with buried active layer and with metal contacts on the opposite sides of the layer format comprising: providing a double hetero-layer structure that contains at least one substrate of a first semiconductor material, an active layer of a second semiconductor material that has a higher refractive index and a smaller energy band gap than the first semiconductor material, and contains an upper layer of the first semiconductor material; applying a cover layer of a third semiconductor material that will dissolve in super-cooled melts of the first semiconductor material on the double hetero-layer structure on the upper layer; defining a stripe by laterally etching the cover layer, the upper layer and the active layer off down into the substrate; and applying, by liquid phase epitaxy, a plurality of layers of the first semiconductor material at the side of the stripe at least up to the height of the stripe, causing the cover layer to dissolve.
Claim 11
Independent Claim
161 words
A method for manufacturing a laser diode with buried active layer and with metal contacts on the opposite sides of the layer format comprising: providing a double hetero-layer structure that contains at least one substrate of a first semiconductor material, an active layer of a second semiconductor material that has a higher refractive index and a smaller energy band gap than the first semiconductor material, and contains an upper layer of the first semiconductor material; applying a cover layer of a third semiconductor material that will dissolve in super-cooled melts of the first semiconductor material on the double hetero-layer structure on the upper layer; defining a stripe by laterally etching the cover layer, the upper layer and the active layer off down into the substrate; and applying, by liquid phase epitaxy, a plurality of layers of the first semiconductor material at the side of the stripe at least up to the height of the stripe, causing the cover layer to dissolve.
Claim 12
Dependent Claim
37 words
The method of claim 9 wherein: InP is employed as first semiconductor material; and In 1-x Ga x As y P 1-y is employed as third semiconductor material, x and y being such that 1≧x≧0.35 and 1≧y≧0.
Claim 13
Dependent Claim
38 words
The method of claim 9 wherein a layer sequence is applied at the side of the stripe having such dopings that barrier layers are formed at both side of the active stripe during operation of the laser diode.
Claim 14
Dependent Claim
20 words
The method of claim 9 wherein the wafer is grown over with a layer upon application of the lateral layers.
Claim 15
Dependent Claim
41 words
The method of claim 9 including the step of improving contact resistance of the metal contact by applying a layer of the second semiconductor material under the metal contact at that side of the layer format facing away from the substrate.
Claim 16
Dependent Claim
46 words
The method of claim 9 including the step of improving lateral current conduction by applying an insulator layer under the metal contact at the side of the stripe of the active layer, being applied at that side of the layer format facing away from the substrate.
Claim 17
Dependent Claim
14 words
The method of claim 9 wherein three layers are applied by liquid phase epitaxy.
References Cited (Backward Citations)
JPS5274285A
Cited
US4142924A
Cited
US4372791A
Cited
JPS55162288A
Cited
US4366569A
Cited
JPS56142691A
Cited
US4404730A
Cited
US4496403A
Cited
US4464211A
Cited
US4662983A
Cited
US4566171A
Cited
US4569721A
Cited
JPS6077486A
Cited
US4648940A
Cited
JPS6290926A
Cited
JPS62199021A
Cited
JPS6358923A
Cited
US4818722A
Cited
US4849373A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-10-15 | 1994-04-16 | 1994-10-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-10-15 | 1998-04-16 | 1998-10-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-10-15 | 2002-04-16 | 2002-10-16 | $7700.00 | Window Closed / Lapsed |