Manufacturing method of semiconductor laser device

Abstract

Abstract PURPOSE:To improve the laser oscillating characteristic and to largely improve the production yield by forming one buried region adjacent to a buried region by a liquid phase epitaxial method and then forming other buried region. CONSTITUTION: An N type InP layer 12, an N type InGaAsP layer 13, a P type InP layer 14, a P type InGaAsP layer 15 are sequentially grown in crystal on an N type InP substrate 1. Then, an SiO2 film 19 is formed. Subsequently, the portion that one buried region 27 is formed is etched, and crystal is grown by liquid phase epitaxial method. Then, an SiO2 film 28 is formed. Thereafter, other buried region 32 is etched, and crystal growth is performed by liquid phase epitaxial method. Thereafter, an SiO2 layer 29 is formed, then electrodes 10, 11 are formed to complete the laser element. Thus, the buried regions are formed alternately, thereby improving the laser oscillating characteristic and largely improving the yield in the production.

Inventors

• 👤 Tomoaki Uno
• 👤 智昭 宇野
• 👤 Takao Kakiuchi
• 👤 垣内　孝夫

Bibliographic Details