Process for manufacturing a semiconductor laser having a buried ribbon

Claim 1

Process for manufacturing a semiconductor laser having a buried ribbon, in which: on a substrate (1), there is deposited by epitaxy a first N-doped confinement layer (2), a non-doped active layer (3), a second P-doped confinement layer (4) and a contact layer (5), the group of these layers forming a double heterostructure, by photolithography, a ribbon (7) is delimited on this double heterostructure and an etching on both sides of the ribbon is performed, to the substrate, which allows a mesa to remain on the substrate, a resumption of epitaxy is performed on both sides of the mesa on the parts of the substrate (2) which have been released to cause a semiconductive layer (12) to grow to achieve an optical and electrical confinement of the laser, this process being characterized by the fact that before the photolithography operation, an implantation of a p-type doping material is performed in the entire contact layer (5), which has the effect of rendering the upper surface of the contact layer (5) amorphous, then the process is continued by delimiting the ribbon, etching and resumption of epitaxy.