US4464211A
Expired / Lapsed
US
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Method for selective area growth by liquid phase epitaxy
Assignee: Nokia Bell Labs
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Filing: 1982-05-26
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Granted: 1984-08-07
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Expires: 2002-05-26
Abstract
Abstract A lateral selective area liquid phase epitaxy method useful for the fabrication of, for example, a double barrier buried heterostructure laser, is described.
Inventors
- 👤 Ralph A. Logan
- 👤 Won-Tien Tsang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 01:50
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/26; H10P14/263; H10P14/27; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
93 words
A method of fabricating a device comprising the step of selectively growing at least one epitaxial layer, said growing step comprising the steps of contacting a first semiconductor material comprising at least one constituent and a second semiconductor material comprising at least two constituents with a growth solution; said growth solution comprising at least two constituents of said first and said second semiconductor materials; said materials being in nonequilibrium with said solution; raising the temperature of said system followed by subsequent lowering of the temperature whereby growth selectively occurs on said first material.
Claim 2
Independent Claim
93 words
A method of fabricating a device comprising the step of selectively growing at least one epitaxial layer, said growing step comprising the steps of contacting a first semiconductor material comprising at least one constituent and a second semiconductor material comprising at least two constituents with a growth solution; said growth solution comprising at least two constituents of said first and said second semiconductor materials; said materials being in nonequilibrium with said solution; raising the temperature of said system followed by subsequent lowering of the temperature whereby growth selectively occurs on said first material.
Claim 3
Dependent Claim
22 words
A method as recited in claim 1 in which at least one of said semiconductor materials comprises a high distribution coefficient constituent.
Claim 4
Dependent Claim
13 words
A method as recited in claim 2 in which said constituent is Al.
Claim 5
Dependent Claim
14 words
A method as recited in claim 3 in which said first material comprises GaAs.
Claim 6
Dependent Claim
18 words
A method as recited in claim 4 in which said second material comprises Al x Ga 1-x As.
Claim 7
Dependent Claim
18 words
A method as recited in claim 5 in which x is less than or equal to approximately 0.3.
Claim 8
Dependent Claim
22 words
A method as recited in claim 1 in which said raising step increases the temperature by at least approximately 0.1 degree C.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-08-07 | 1988-02-06 | 1988-08-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-08-07 | 1992-02-06 | 1992-08-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-08-07 | 1996-02-06 | 1996-08-07 | $7700.00 | Window Closed / Lapsed |