Method for manufacture of interdigital periodic structure device

Claim 1

In a method for manufacturing an interdigital periodic structure device, comprising the steps of: (a) disposing a growth substrate and a heater arranged to apply heat to said substrate in an ultra-high vacuum chamber; (b) disposing a main evaporation source substantially opposite said substrate for evaporating a main semiconductor material so as to form thin semiconductor films on said substrate; (c) interposing a mask defining a hole between said substrate and said main evaporation source in the vicinity of said substrate; (d) disposing a p-type impurity evaporation source near one side of, and adjacent said main evaporation source so as to dope said semiconductor films except one side part thereof with said p-type impurity through said hole defined in said mask; (e) disposing an n-type impurity evaporation source adjacent said main evaporation source and placed substantially symmetrically thereabout with respect to said p-type impurity evaporation source so as to dope the semiconductor films except the other side part thereof with an n-type impurity through said hole defined in said mask; (f) interposing a main shutter having open and closed states between said substrate and said main- and said impurity-evaporation sources; (g) disposing another shutter between at least one of said impurity evaporation sources and said substrate so as to control doping of said semiconductor films from said one of said impurity evaporation sources; (h) allowing molecular beams of at least one element from said main- and from said impurity-evaporation sources to be evaporated and projected through said hole defined in said mask onto said substrate, while heating said substrate; and (i) alterately opening and closing said other shutter at time intervals when said main shutter is in said open state.