US5404027A
Expired / Lapsed
US
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Buried ridge II-VI laser diode
Assignee: 3M Co
•
Filing: 1993-02-12
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Granted: 1995-04-04
•
Expires: 2013-02-12
Abstract
Abstract A buried-ridge or buried-heterostructure II-VI laser diode. Polycrystalline II-VI semiconductor such as ZnS, ZnSSe, ZnSe or CdS deposited by vacuum evaporation buries the etched ridge.
Inventors
- 👤 Michael A. Haase
- 👤 Jun Qiu
- 👤 Hwa Cheng
- 👤 James M. DePuydt
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 10:20
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H01S5/323; H10; H10H; H10H20/00; H10H20/80; H10H20/83; H10H20/832; B; B82; B82Y; B82Y20/00; H01S5/04; H01S5/042; H01S5/0421; H01S5/34; H01S5/347; H10D; H10D64/00; H10D64/60; H10D64/62; H10H20/01; H10H20/011; H10H20/012; H10H20/0125; H10H20/81; H10H20/822; H10H20/823; H10H20/8232; H10H20/831; H01S5/20; H01S5/22; H01S5/2205; H01S5/2211; H01S5/223; H01S5/2231; H01S5/305; H01S5/3054; H01S5/3059; H01S5/3068; H01S5/327; H01S5/3403; H10H20/032; H10H20/816; H10H20/8162
Claims Analysis
Total Claims: 36
Claim 1
Independent Claim
132 words
A II-VI compound semiconductor laser diode, including: a first guiding layer of II-VI semiconductor of a first conductivity type; a second guiding layer of II-VI semiconductor of a second conductivity type adjacent to the first guiding layer, the first and second guiding layers forming a pn junction; an active layer of II-VI semiconductor adjacent to the pn junction; a semiconductor substrate of the first conductivity type opposite the first guiding layer from the second guiding layer; a ridge formed in at least one of the layers of II-VI semiconductor; a burying layer of II-VI semiconductor on opposite sides of the ridge, forming a buried-ridge waveguide for lateral optical and current confinement; a first electrode opposite the substrate from the first guiding layer; and a second electrode opposite the ridge from the substrate.
Claim 2
Dependent Claim
132 words
A II-VI compound semiconductor laser diode, including: a first guiding layer of II-VI semiconductor of a first conductivity type; a second guiding layer of II-VI semiconductor of a second conductivity type adjacent to the first guiding layer, the first and second guiding layers forming a pn junction; an active layer of II-VI semiconductor adjacent to the pn junction; a semiconductor substrate of the first conductivity type opposite the first guiding layer from the second guiding layer; a ridge formed in at least one of the layers of II-VI semiconductor; a burying layer of II-VI semiconductor on opposite sides of the ridge, forming a buried-ridge waveguide for lateral optical and current confinement; a first electrode opposite the substrate from the first guiding layer; and a second electrode opposite the ridge from the substrate.
Claim 3
Dependent Claim
17 words
The II-VI laser diode of claim 1 wherein the active layer includes a quantum well active layer.
Claim 4
Dependent Claim
14 words
An electronic device including the laser diode of claim 1 as a light source.
Claim 5
Dependent Claim
17 words
The laser diode of claim 1 wherein the burying layer includes a layer of polycrystalline II-VI semiconductor.
Claim 6
Dependent Claim
13 words
The laser diode of claim 4 wherein the burying layer includes polycrystalline ZnSe.
Claim 7
Dependent Claim
13 words
The laser diode of claim 4 wherein the burying layer includes polycrystalline ZnS.
Claim 8
Dependent Claim
13 words
The laser diode of claim 4 wherein the burying layer includes polycrystalline ZnSSe.
Claim 9
Dependent Claim
13 words
The laser diode of claim 4 wherein the burying layer includes polycrystalline CdS.
Claim 10
Dependent Claim
13 words
The laser diode of claim 4 wherein the burying layer includes polycrystalline ZnTe.
Claim 11
Dependent Claim
13 words
The laser diode of claim 4 wherein the burying layer includes polycrystalline CdTe.
Claim 12
Dependent Claim
13 words
The laser diode of claim 4 wherein the burying layer includes polycrystalline CdZnS.
Claim 13
Dependent Claim
17 words
The laser diode of claim 1 wherein the active layer includes a multiple quantum well active layer.
Claim 14
Dependent Claim
16 words
The laser diode of claim 1 wherein the active layer includes a CdZnSe quantum well layer.
Claim 15
Dependent Claim
16 words
The laser diode of claim 1 wherein the first and second guiding layers include ZnSSe layers.
Claim 16
Dependent Claim
13 words
The laser diode of claim 14 wherein the burying layer includes polycrystalline ZnS.
Claim 17
Dependent Claim
14 words
The laser diode of claim 14 wherein the burying layer includes polycrystalline II-VI semiconductor.
Claim 18
Dependent Claim
15 words
The laser diode of claim 1 wherein the ridge extends through the second guiding layer.
Claim 19
Dependent Claim
33 words
The laser diode of claim 1 wherein: the active layer is positioned between the first and second guiding layers; and the ridge extends through the second guiding layer and into the active layer.
Claim 20
Dependent Claim
17 words
The laser diode of claim 18 wherein the ridge extends through the second guiding and active layers.
Claim 21
Dependent Claim
62 words
The laser diode of claim 1 and further including: a first cladding layer of II-VI semiconductor of a first conductivity type between the substrate and the first guiding layer; a second cladding layer of II-VI semiconductor of a second conductivity type between the second guiding layer and the second electrode; and the ridge is formed in at least the second cladding layer.
Claim 22
Dependent Claim
31 words
The laser diode of claim 20 wherein: the first and second cladding layers include ZnS x Se 1-x layers where x is about 0.07; and the substrate includes a GaAs substrate.
Claim 23
Dependent Claim
24 words
The laser diode of claim 20 wherein: the first and second cladding layers include MgZnSSe; and the first and second guiding layers include ZnSSe.
Claim 24
Dependent Claim
24 words
The laser diode of claim 20 wherein: the first and second cladding layers include MnZnSSe; and the first and second guiding layers, include ZnSSe.
Claim 25
Dependent Claim
24 words
The laser diode of claim 20 wherein: the first and second cladding layers include CdZnS; and the first and second guiding layers include ZnSSe.
Claim 26
Dependent Claim
15 words
The laser diode of claim 20 wherein the ridge extends through the second cladding layer.
Claim 27
Dependent Claim
21 words
The laser diode of claim 20 wherein the ridge extends through the second cladding layer and into the second guiding layer.
Claim 28
Dependent Claim
18 words
The laser diode of claim 20 wherein the ridge extends through the second cladding and second guiding layers.
Claim 29
Dependent Claim
93 words
A II-VI compound semiconductor laser diode including: a plurality of layers of II-VI semiconductor, including at least a first guiding layer, forming a pn junction; an active layer of II-VI semiconductor within the pn junction; a semiconductor substrate for supporting the layers of II-VI semiconductor; a ridge formed in at least one of the layers of II-VI semiconductor; a burying layer of II-VI semiconductor on opposite sides of the ridge, forming a buried-ridge waveguide for lateral optical and current confinement; and first and second electrodes for coupling electrical energy to the laser diode.
Claim 30
Dependent Claim
93 words
A II-VI compound semiconductor laser diode including: a plurality of layers of II-VI semiconductor, including at least a first guiding layer, forming a pn junction; an active layer of II-VI semiconductor within the pn junction; a semiconductor substrate for supporting the layers of II-VI semiconductor; a ridge formed in at least one of the layers of II-VI semiconductor; a burying layer of II-VI semiconductor on opposite sides of the ridge, forming a buried-ridge waveguide for lateral optical and current confinement; and first and second electrodes for coupling electrical energy to the laser diode.
Claim 31
Dependent Claim
73 words
The II-VI laser diode of claim 28 wherein the plurality of layers of II-VI semiconductor includes: a first cladding layer of II-VI semiconductor of a first conductivity type over the substrate; a second cladding layer of II-VI semiconductor of a second conductivity type over the first cladding layer, the first and second cladding layers forming the pn junction; and a guiding layer of undoped II-VI semiconductor between the first and second cladding layers.
Claim 32
Dependent Claim
50 words
The II-VI laser diode of claim 28 wherein: the first guiding layer includes a first guiding layer of II-VI semiconductor of a first conductivity type; and the plurality of layers of semiconductor forming the pn junction further include a second guiding layer of II-VI semiconductor of a second conductivity type.
Claim 33
Dependent Claim
17 words
The II-VI laser diode of claim 28 wherein the active layer includes a quantum well active layer.
Claim 34
Dependent Claim
18 words
The II-VI laser diode of claim 28 wherein the burying layer includes a layer of polycrystalline II-VI semiconductor.
Claim 35
Dependent Claim
14 words
An electronic device including the laser diode of claim 28 as a light source.
Claim 36
Dependent Claim
59 words
The II-VI laser diode of claim 28 wherein the plurality of layers of II-VI semiconductor includes: a first cladding layer of II-VI semiconductor of a first conductivity type over the substrate; and a second cladding layer of II-VI semiconductor of a second conductivity type over the first cladding layer, the first and second cladding layers forming the pn junction.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-04-03 | 1998-10-03 | 1999-04-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-04-03 | 2002-10-03 | 2003-04-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-04-03 | 2006-10-03 | 2007-04-04 | $7700.00 | Window Closed / Lapsed |