Semiconductor light-emitting device

Abstract

Abstract PURPOSE:To obtain a semiconductor laser in low threshold current and stable in an oscillation transverse mode by a method wherein a ZnSxSe1-XII-VI compound semiconductor is buried the ridge side surface of a ridge type visible semiconductor laser on a GaAs substrate. CONSTITUTION:A p-type clad layer 21, an N-type clad layer 23, an active layer 22 and a contact layer 24 are formed on a GaAs substrate 20 by MOVPE and MBE method. A ridge structure can be easily formed if a dry etching is performed with a Cl2 gas using a resist and so on as masks. Then, after a ridge is formed, a ZnSxSe1-x film is grown by a selective embedding on the contact layer 24 using an SiO2 or SiN film as a mask by MOVPE or MBE methods. As the growth temperature of he active layer is normally 700-750 deg.C, the thermal effect to be given to the active layer is small because a II-VI group embedding growth temperature is particularly low. Moreover, the formed undoped ZnSxSe1-x film discharges fully the role of a buried layer in a ridge type structure because it is about 10<4>-10<5>OMEGA. cm in specific resistance, about 2.5 or thereabouts in refractive index and 2.4 eV in forbidden band width.

Inventors

• 👤 Yoichi Sasai
• 👤 佐々井　洋一
• 👤 Mototsugu Ogura
• 👤 基次 小倉
• 👤 Toshiya Yokogawa
• 👤 俊哉 横川

Bibliographic Details