EP0380106A2
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EP
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Semiconductor emitting device and process for preparing the same
Assignee: Hitachi Ltd
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Filing: 1990-01-25
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Granted: —
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Expires: 2010-01-25
Abstract
Abstract A semiconductor emitting device capable of emitting blue light comprises a first clad layer (20), an active layer (21) and a second clad layer (22), successively formed on a semiconductor substrate (15), where a nitrogen-doped p-type ZnSSe thin film of low-resistivity having a carrier concentration of not less than 1 x 10<1><6>cm<-><3> and a resistivity of not more than 10 OMEGA -cm is used as the first or the second clad layer (20, 22).
Inventors
- 👤 Masahito Migita
- 👤 Akira C/O Hitachi Daini Kyoshinryo Taike
- 👤 Masatoshi Shiiki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 14:57
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/823; B; B82; B82Y; B82Y20/00; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H01S5/327; H01S5/34; H01S5/347; H10H20/01; H10H20/011; H10H20/012; H10H20/0125; H10H20/811; H10H20/812
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
81 words
A semiconductor emitting device, which comprises a semiconductor substrate of p-type conductivity; a first clad layer of nitrogen-doped p-type ZnS x Se 1-x , where 0 ≦ x < 1, formed on the semiconductor substrate; an active layer, formed on the first clad layer; and a second clad layer of n-type conductivity, formed on the active layer, a hetero junction being provided between the active layer and the first clad layer and between the active layer and the second clad layer.
Claim 2
Dependent Claim
81 words
A semiconductor emitting device, which comprises a semiconductor substrate of p-type conductivity; a first clad layer of nitrogen-doped p-type ZnS x Se 1-x , where 0 ≦ x < 1, formed on the semiconductor substrate; an active layer, formed on the first clad layer; and a second clad layer of n-type conductivity, formed on the active layer, a hetero junction being provided between the active layer and the first clad layer and between the active layer and the second clad layer.
Claim 3
Dependent Claim
35 words
A semiconductor emitting device according to Claim 1, wherein the ZnS x Se 1-x , where 0 ≦ x < 1, has a carrier concentration of not less than 1 x 10¹⁶cm⁻¹ at room temperature.
Claim 4
Dependent Claim
33 words
A semiconductor emitting device according to Claim 2, wherein the ZnS x Se 1-x , where 0 ≦ x < 1 has a resistivity of not more than 10 Ω-cm at room temperature.
Claim 5
Dependent Claim
45 words
A semiconductor emitting device according to Claim 2, wherein the active layer is composed of ZnS y Te 1-y , where 0.58 ≦ y ≦ 0.88, and the second clad layer is composed of ZnS z Se 1-z , where 0 ≦ z ≦ 0.68.
Claim 6
Dependent Claim
46 words
A semiconductor emitting device according to Claim 2, wherein the active layer is in a superlattice structure composed of lamination of a plurality of ZnS y Te 1-y and ZnS z Se 1-z , where 0.58 ≦ y ≦ 0.88 and 0 ≦ z ≦ 0.68.
Claim 7
Dependent Claim
49 words
A semiconductor emitting device according to Claim 2, wherein the band gap energy each of the ZnS x Se 1-x and a first semiconductor constituting the second clad layer is higher than the band gap energy of a second semiconductor constituting the active layer by at least 0.2 eV.
Claim 8
Dependent Claim
68 words
A semiconductor emitting device according to Claim 2, wherein a lattice mismatch between the lattice constant of the ZnS x Se 1-x constituting the first clad layer and the lattice constant of a second semiconductor constituting the active layer and a lattice mismatch between the lattice constant of the second semiconductor and the lattice constant of a first semiconductor constituting the second clad layer are each within 0.3%.
Claim 9
Dependent Claim
83 words
A semiconductor emitting device, which comprises a semiconductor substrate having an n-type conductivity; a first clad layer having an n-type conductivity; formed on the semiconductor substrate; an active layer formed on the first clad layer; and a second clad layer of nitrogen-doped, p-type ZnS x Se 1-x , where 0 ≦ x < 1, formed on the active layer, a hetero junction being provided between the first clad layer and the active layer and between the active layer and the second clad layer.
Claim 10
Dependent Claim
83 words
A semiconductor emitting device, which comprises a semiconductor substrate having an n-type conductivity; a first clad layer having an n-type conductivity; formed on the semiconductor substrate; an active layer formed on the first clad layer; and a second clad layer of nitrogen-doped, p-type ZnS x Se 1-x , where 0 ≦ x < 1, formed on the active layer, a hetero junction being provided between the first clad layer and the active layer and between the active layer and the second clad layer.
Claim 11
Dependent Claim
64 words
A semiconductor emitting device, which comprises a nitrogen-doped p-type ZnS x Se 1-x thin film, where 0 ≦ x < 1, having a resistivity of not more than 10 Ω-cm at room temperature and a first semiconductor layer formed on the ZnS x Se 1-x thin film, a junction being provided between the ZnS x Se 1-x thin film and the first semiconductor layer.
Claim 12
Dependent Claim
64 words
A semiconductor emitting device, which comprises a nitrogen-doped p-type ZnS x Se 1-x thin film, where 0 ≦ x < 1, having a resistivity of not more than 10 Ω-cm at room temperature and a first semiconductor layer formed on the ZnS x Se 1-x thin film, a junction being provided between the ZnS x Se 1-x thin film and the first semiconductor layer.
Claim 13
Dependent Claim
28 words
A semiconductor emitting device according to Claim 9, wherein the first semiconductor layer is composed of n-type ZnSe y S 1-y , where 0 ≦ y < 1.
Claim 14
Dependent Claim
47 words
A p-type semiconductor thin film represented by the general formula ZnS x Se 1-x , where 0 ≦ x < 1, having a carrier concentration of not less than 1 x 10¹⁶cm⁻³ and a conductivity of not more than 10 Ω-cm at room temperature, doped with nitrogen.
Claim 15
Dependent Claim
47 words
A p-type semiconductor thin film represented by the general formula ZnS x Se 1-x , where 0 ≦ x < 1, having a carrier concentration of not less than 1 x 10¹⁶cm⁻³ and a conductivity of not more than 10 Ω-cm at room temperature, doped with nitrogen.
Claim 16
Dependent Claim
86 words
A p-type semiconductor thin film according to Claim 11, wherein the ZnS x Se 1-x , where 0 ≦ x < 1, is formed and semiconductor substrate by leading a source of group-II element, a source of group-VI element and a source of nitrogen-containing dopant in the form of molecular beams onto the semiconductor substrate in such a source molar ratio of the group-II element to the group-VI element that crystal growth rate is limited by an amount of supply of the source of group-VI element.
Claim 17
Dependent Claim
35 words
A p-type semiconductor thin film according to Claim 12, wherein the ZnS x Se 1-x , where 0 ≦ x < 1, is formed at a temperature of the semiconductor substrate of 350° to 700°C.
Claim 18
Dependent Claim
39 words
A p-type semiconductor thin film according to Claim 12, wherein the ZnS x Se 1-x , where 0 ≦ x < 1, is formed by using one of ammonia, diethylamine and triethylamine as the source of the nitrogen-containing dopant.
Claim 19
Dependent Claim
41 words
A p-type semiconductor thin film according to Claim 12, wherein the ZnS x Se 1-x , where 0 ≦ x < 1, is formed in a source molar ratio of the group-II element to the group-VI element of 0.1 to 5.
Claim 20
Dependent Claim
83 words
A process for preparing a semiconductor emitting device, which comprises a step of forming a p-type ZnS x Se 1-x thin film, where 0 ≦ x < 1, having a carrier concentration of not less than 1 x 10¹⁶cm⁻³ doped with nitrogen, on a p-type semiconductor substrate; a step of forming a substantially undoped, first semiconductor layer on the p-type ZnS x Se 1-x thin film; and a step of forming a second semiconductor layer of n-type conductivity on the first semiconductor layer.
Claim 21
Dependent Claim
83 words
A process for preparing a semiconductor emitting device, which comprises a step of forming a p-type ZnS x Se 1-x thin film, where 0 ≦ x < 1, having a carrier concentration of not less than 1 x 10¹⁶cm⁻³ doped with nitrogen, on a p-type semiconductor substrate; a step of forming a substantially undoped, first semiconductor layer on the p-type ZnS x Se 1-x thin film; and a step of forming a second semiconductor layer of n-type conductivity on the first semiconductor layer.
Claim 22
Dependent Claim
79 words
A process for preparing a semiconductor emitting device, which comprises a step of forming a first semiconductor layer of n-type conductivity on an n-type semiconductor substrate; a step of forming a substantially undoped second semiconductor layer on the first semiconductor layer; and a step of forming a p-type ZnS x Se 1-x thin film, wherein 0 ≦ x < 1, having a carrier concentration of not less than 1 x 10¹⁶cm⁻³, doped with nitrogen, on the second semiconductor layer.
Claim 23
Dependent Claim
79 words
A process for preparing a semiconductor emitting device, which comprises a step of forming a first semiconductor layer of n-type conductivity on an n-type semiconductor substrate; a step of forming a substantially undoped second semiconductor layer on the first semiconductor layer; and a step of forming a p-type ZnS x Se 1-x thin film, wherein 0 ≦ x < 1, having a carrier concentration of not less than 1 x 10¹⁶cm⁻³, doped with nitrogen, on the second semiconductor layer.
References Cited (Backward Citations)
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