US5155738A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor laser elements
Assignee: Furukawa Electric Co Ltd
•
Filing: 1990-10-31
•
Granted: 1992-10-13
•
Expires: 2010-10-31
Abstract
Abstract A semiconductor laser element having a GaAs substrate formed thereon with an active layer of a strained quantum well construction provided with an In x Ga 1-x As strained quantum well layer and a GaAs barrier layer and clad layers arranged up and down of said active layer through an epitaxial growth means. A lattice mismatching rate of the clad layer with respect to the substrate is less than 10 -3 .
Inventors
- 👤 Teturo Ijichi
- 👤 Hiroshi Okamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 18:33
CPC Classifications
B; B82; B82Y; B82Y20/00; H; H01; H01S; H01S5/00; H01S5/30; H01S5/34; H01S5/343; H01S5/34313; H01S5/20; H01S5/2054; H01S5/2081; H01S5/209; H01S5/22; H01S5/223; H01S5/2231; H01S5/3403; H01S5/3406
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
85 words
In a semiconductor laser element having a GaAs substrate formed thereon with an active layer of a strained quantum well construction provided with an In n Ga 1-x As, wherein 0≦x≦0.5, strained quantum well layer and a GaAs barrier layer and clad layers arranged on the top and bottom surface of said active layer through an epitaxial growth means, said clad layer being formed of In z Ga 1-z As y P 1-y , wherein 0<z<0.6 and y is selected in a range of 0<y<1.
Claim 2
Dependent Claim
85 words
In a semiconductor laser element having a GaAs substrate formed thereon with an active layer of a strained quantum well construction provided with an In n Ga 1-x As, wherein 0≦x≦0.5, strained quantum well layer and a GaAs barrier layer and clad layers arranged on the top and bottom surface of said active layer through an epitaxial growth means, said clad layer being formed of In z Ga 1-z As y P 1-y , wherein 0<z<0.6 and y is selected in a range of 0<y<1.
Claim 3
Dependent Claim
29 words
In a semiconductor laser element according to claim 1, wherein a lattice mismatching rate of the clad layer with respect to the substrate is less than 10 -3 .
Claim 4
Dependent Claim
39 words
In a semiconductor laser element according to claim 1, wherein a stress relieving layer formed of In 1-z Ga z P (provided z>0.51) is interposed between the active layer and both the clad layers arranged up and down thereof.
Claim 5
Dependent Claim
87 words
In a semiconductor laser element having a GaAs substrate formed thereon with an active layer of a strained quantum well construction provided with an In x Ga 1-x As strained quantum well layer and a GaAs barrier layer and clad layers arranged on the top and bottom surface of said active layer through an epitaxial growth means, each of said clad layers being formed of InGaP, said clad layers having a GaAs etching stop layer inserted therein, said etching stop layer being less than 200 Å thick.
Claim 6
Dependent Claim
87 words
In a semiconductor laser element having a GaAs substrate formed thereon with an active layer of a strained quantum well construction provided with an In x Ga 1-x As strained quantum well layer and a GaAs barrier layer and clad layers arranged on the top and bottom surface of said active layer through an epitaxial growth means, each of said clad layers being formed of InGaP, said clad layers having a GaAs etching stop layer inserted therein, said etching stop layer being less than 200 Å thick.
Claim 7
Dependent Claim
29 words
In a semiconductor laser element according to claim 4, wherein a lattice mismatching rate of the clad layer with respect to the substrate is less than 10 -3 .
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-10-13 | 1996-04-13 | 1996-10-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-10-13 | 2000-04-13 | 2000-10-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-10-13 | 2004-04-13 | 2004-10-13 | $7700.00 | Window Closed / Lapsed |