US4647813A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electroluminescent device having an additional selenium layer
Assignee: Koa Corp
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Filing: 1984-11-29
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Granted: 1987-03-03
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Expires: 2004-11-29
Abstract
Abstract An electroluminescent device wherein a light-emitting layer is formed between electrode layers, and a selenium layer is formed between the light-emitting layer and at least one of the electrode layers. Each of the crystals in the selenium layer grows in a columnar shape in the direction extending at right angles to the light-emitting layer.
Inventors
- 👤 Motoi Kitabayashi
- 👤 Takuo Hayashi
- 👤 Norihiko Ozawa
- 👤 Yukihiro Hirasawa
- 👤 Naotoshi Miyazawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 21:32
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/823; H10H20/8232; H05; H05B; H05B33/00; H05B33/12; H05B33/14; H05B33/145; H05B33/22; H05B33/26; H10H20/01; H10H20/011; H10H20/012; H10H20/0125
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
139 words
In an electroluminescent device comprising a light emitting layer of a semiconductor to which has been added an active material that provides light-emitting nuclei, and a pair of electrodes, one overlying each of a pair of opposite surfaces of said layer, means for preventing burn-out of said layer due to current concentrations at defects therein such as pinholes and crystal grain boundaries, said means comprising: a selenium layer between one of said surfaces and the electrode overlying the same, the material of said selenium layer (1) comprising at least 70% selenium and (2) being initially in polycrystalline form so that upon the occurrence of a current concentration at a defect in the light-emitting layer the self-curing property of the material of the selenium layer causes the portion of the selenium layer adjacent to that defect to become substantially nonconductive.
Claim 2
Dependent Claim
139 words
In an electroluminescent device comprising a light emitting layer of a semiconductor to which has been added an active material that provides light-emitting nuclei, and a pair of electrodes, one overlying each of a pair of opposite surfaces of said layer, means for preventing burn-out of said layer due to current concentrations at defects therein such as pinholes and crystal grain boundaries, said means comprising: a selenium layer between one of said surfaces and the electrode overlying the same, the material of said selenium layer (1) comprising at least 70% selenium and (2) being initially in polycrystalline form so that upon the occurrence of a current concentration at a defect in the light-emitting layer the self-curing property of the material of the selenium layer causes the portion of the selenium layer adjacent to that defect to become substantially nonconductive.
Claim 3
Dependent Claim
75 words
The electroluminescent device of claim 1 wherein (1) in said light-emitting layer (a) the semiconductor is a material of the class that consists of ZnSe and ZnS, and (b) the active material is of the class that consists of Mn, Tb and Sm; and (2) the material of said selenium layer comprises, in addition to said at least 70% selenium, material from the class that consists of Cd, Bi, the alkali metals and the halogens.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-03-02 | 1990-09-01 | 1991-03-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-03-02 | 1994-09-01 | 1995-03-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-03-02 | 1998-09-01 | 1999-03-03 | $7700.00 | Window Closed / Lapsed |