US5061973A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor heterojunction device with graded bandgap
Assignee: United States Department of the Navy
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Filing: 1990-04-27
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Granted: 1991-10-29
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Expires: 2010-04-27
Abstract
Abstract The semiconductor materials of junction forming layers of a heterojunctiontructure are interfaced by a gap region that is graded by degree of alloying of those components of an interfacing material which are respectively compounded in the semiconductor materials of the junction forming layers having different bandgaps and band edges that are aligned by the grading of the interfacing gap region to selectively control rectifying junction characteristics.
Inventors
- 👤 Tak-Kin Chu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 21:13
CPC Classifications
H; H10; H10D; H10D8/00; H10D62/00; H10D62/80; H10D62/82; H10D62/826; H10D62/86; H10D62/8603; H10D62/871
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
111 words
In a converter of radiation to electrical signals employing two regions of semiconductor material forming wide and narrow bandgaps, said two regions being of the same conductivity type and having conduction and valence band edges between which abrupt steps exist to define said wide and narrow bandgaps, the improvement residing in: an intermediate region in interfacing abutment with said two regions and made of an alloy material interrelated with the semiconductor material of the two regions to establish alignment bands respectively bridging the conduction and valence band edges of the two regions, said alignment bands defining a graded bandgap of continuously varying width, between the band edges within the intermediate region.
Claim 2
Dependent Claim
111 words
In a converter of radiation to electrical signals employing two regions of semiconductor material forming wide and narrow bandgaps, said two regions being of the same conductivity type and having conduction and valence band edges between which abrupt steps exist to define said wide and narrow bandgaps, the improvement residing in: an intermediate region in interfacing abutment with said two regions and made of an alloy material interrelated with the semiconductor material of the two regions to establish alignment bands respectively bridging the conduction and valence band edges of the two regions, said alignment bands defining a graded bandgap of continuously varying width, between the band edges within the intermediate region.
Claim 3
Dependent Claim
70 words
The improvement as defined in claim 1 wherein the conduction annd valence band edges between which the wide bandgap is defined are respectively lower than the conduction and valence bandedges between which the narrow bandgap is defined, both of the alignment bands varying continuously in the same direction from the wide bandgap to the narrow bandgap where the semiconductor material of the two regions is in a n-type junction class.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-10-28 | 1995-04-29 | 1995-10-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-10-28 | 1999-04-29 | 1999-10-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-10-28 | 2003-04-29 | 2003-10-29 | $7700.00 | Window Closed / Lapsed |