US4769341A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of fabricating non-silicon materials on silicon substrate using an alloy of Sb and Group IV semiconductors
Assignee: Nokia Bell Labs
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Filing: 1986-12-29
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Granted: 1988-09-06
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Expires: 2006-12-29
Abstract
Abstract A semiconductor device comprising an epitaxially grown tin and Group IV compound semiconductor region on which at least one other semiconductor is grown lattice matched to the adjacent portion of the tin containing region. A large number of semiconductors may thus be grown.
Inventors
- 👤 Sergey Luryi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 22:50
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/3212; H10P14/3242; H10P14/3244; H10P14/3251; H10P14/3252; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3412; Y; Y10; Y10S; Y10S148/00; Y10S148/072; Y10S148/097; Y10S148/16; Y10S148/169; Y10S438/00; Y10S438/933; Y10S438/936
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
60 words
A method of fabricating a semiconductor device comprising the steps of: growing a compositionally graded crystalline region comprising alloy of Sn and at least on other semiconductor selected from the group consisting of Group IV semiconductors by a non-equilibrium process or a substrate; and growing a semiconductor region approximately lattice matched to the adjacent portion of said Sn comprising region.
Claim 2
Independent Claim
60 words
A method of fabricating a semiconductor device comprising the steps of: growing a compositionally graded crystalline region comprising alloy of Sn and at least on other semiconductor selected from the group consisting of Group IV semiconductors by a non-equilibrium process or a substrate; and growing a semiconductor region approximately lattice matched to the adjacent portion of said Sn comprising region.
Claim 3
Dependent Claim
16 words
A method as recited in claim 1 in which said non-equilibrium process comprises molecular beam epitaxy.
Claim 4
Dependent Claim
19 words
A method as recited in claim 2 in which said process proceed at a temperature less than 500° C.
Claim 5
Dependent Claim
18 words
A method as recited in claim 3 in which said crystalline region comprising Sn comprises a superlattice region.
Claim 6
Dependent Claim
23 words
A method as recited in claim 1 in which said substrate comprises a composition related from the group consisting of Si and Ge.
Claim 7
Dependent Claim
13 words
A method as recited in claim 5 in which said substrate comprises Si.
References Cited (Backward Citations)
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Cited
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Cited
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Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-09-06 | 1992-03-07 | 1992-09-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-09-06 | 1996-03-07 | 1996-09-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-09-06 | 2000-03-07 | 2000-09-06 | $7700.00 | Window Closed / Lapsed |