US4675708A
Expired / Lapsed
US
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Semiconductor superlattice structure
Assignee: NEC Corp
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Filing: 1985-09-24
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Granted: 1987-06-23
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Expires: 2005-09-24
Abstract
Abstract A light emitting diode, semiconductor laser or similar light emitting element, having an emission wavelength is 560 nanometers or less, that is implemented with only III-V compound semiconductors. The active layer of the light emitting element uses a semiconductor superlattice structure generated by periodically and repeatedly laminating a multi layer structure of different semiconductors. The structure comprises layers of A1P, GaP and InP, each layer being one of ten atomic layers thick.
Inventors
- 👤 Kentaro Onabe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 14:07
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/811; H10H20/812; B; B82; B82Y; B82Y20/00; H01; H01S; H01S5/00; H01S5/30; H01S5/34; H01S5/343; H01S5/34326; H10D; H10D62/00; H10D62/80; H10D62/81; H10D62/815; H10D62/8161; H10D62/8162; H10D62/8164; H01S5/342
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
52 words
A semiconductor superlattice structure in which semiconductor materials which are different from each other are periodically deposited one upon another, characterized in that a unit structure which defines one period consists of layers of AlP, GaP and InP each having a predetermined thickness of the order of one to ten atomic layers.
Claim 2
Dependent Claim
52 words
A semiconductor superlattice structure in which semiconductor materials which are different from each other are periodically deposited one upon another, characterized in that a unit structure which defines one period consists of layers of AlP, GaP and InP each having a predetermined thickness of the order of one to ten atomic layers.
Claim 3
Dependent Claim
15 words
The structure as claimed in claim 1 wherein said structure has a direct energy gap.
Claim 4
Dependent Claim
15 words
The structure as claimed in claim 2 wherein said structure has no crystal lattice defects.
Claim 5
Dependent Claim
57 words
A light emitting element capable of emitting light at a wavelength less than 560 nanometers and having an active layer implemented only with III-V compound semiconductor material, said active layer comprising a superlattice structure which includes at least a GaP layer, an AlP layer and one InP layer, each such layer being 1 to 10 atoms thick.
Claim 6
Dependent Claim
57 words
A light emitting element capable of emitting light at a wavelength less than 560 nanometers and having an active layer implemented only with III-V compound semiconductor material, said active layer comprising a superlattice structure which includes at least a GaP layer, an AlP layer and one InP layer, each such layer being 1 to 10 atoms thick.
Claim 7
Dependent Claim
31 words
A light emitting element as claimed in claim 4 wherein said active layer has a direct energy gap in an energy region, Eg, where Eg is greater than 2.2 electron volts.
Claim 8
Dependent Claim
18 words
A light emitting element as claimed in claim 4 wherein said active layer has no crystal lattice defects.
Claim 9
Dependent Claim
90 words
A multi-layer light emitting element comprising: first and second electrodes; a semiconductor substrate of n-GaAs material having on one surface thereof said first electrode; a first cladding layer disposed on the other surface of said substrate; a second cladding layer and an active layer having a substrate structure; and disposed between said first cladding layer and said second cladding layer, wherein said active layer comprises at least one each of an AlP layer, a GaP layer and an InP layer, each such layer being 1 to 10 atom layers thick.
Claim 10
Dependent Claim
90 words
A multi-layer light emitting element comprising: first and second electrodes; a semiconductor substrate of n-GaAs material having on one surface thereof said first electrode; a first cladding layer disposed on the other surface of said substrate; a second cladding layer and an active layer having a substrate structure; and disposed between said first cladding layer and said second cladding layer, wherein said active layer comprises at least one each of an AlP layer, a GaP layer and an InP layer, each such layer being 1 to 10 atom layers thick.
Claim 11
Dependent Claim
30 words
The light emitting element as claimed in claim 7 wherein each of said first and second cladding layers has an effective energy gap greater than that of the active layer.
Claim 12
Dependent Claim
20 words
The light emitting element as claimed in claim 7 wherein said cladding layers and said active layer constitutes a double-heterostructure.
Claim 13
Dependent Claim
54 words
The light emitting element as claimed in claim 7 wherein said active layer comprises at least two unit structures, each said unit structures comprising at least one each of an AlP layer, a GaP layer and an InP layer and all said units being laminated together in the <100> direction of said semiconductor substrate.
Claim 14
Dependent Claim
28 words
The light emitting element as claimed in claim 7 wherein the thickness of each layer on each unit structure is within the range of 1 to 10 atoms.
Claim 15
Dependent Claim
18 words
The light emitting element as claimed in claim 7 wherein said active layer has a direct energy gap.
Claim 16
Dependent Claim
18 words
The light emitting element as claimed in claim 7 wherein said active element has no crystal lattice defects.
References Cited (Backward Citations)
US4261771A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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