Patent US7122464B2 successfully refreshed from Google Patents.
US7122464B2
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US
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Systems and methods of forming refractory metal nitride layers using disilazanes
Assignee: Micron Technology Inc
•
Filing: 2004-08-30
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Granted: 2006-10-17
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Expires: 2024-08-30
Abstract
Abstract A method of forming (and apparatus for forming) refractory metal nitride layers (including silicon nitride layers), such as a tantalum (silicon) nitride barrier layer, on a substrate by using a vapor deposition process with a refractory metal precursor compound, a disilazane, and an optional silicon precursor compound.
Inventors
- 👤 Brian A. Vaartstra
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 00:53
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45523; C23C16/45525; C23C16/45527; C23C16/45531; C23C16/22; C23C16/30; C23C16/34; C23C16/45553; H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10P14/432; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/052; H10W20/0526; H10D1/682
Claims Analysis
Total Claims: 41
Claim 1
Independent Claim
187 words
A method of manufacturing a memory device, the method comprising: providing a substrate comprising a silicon-containing surface; providing a vapor comprising one or more refractory metal precursor compounds of the formula MY n (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M; directing the vapor comprising the one or more precursor compounds of the Formula I to the substrate and allowing the one or more compounds to chemisorb on the silicon-containing surface; providing a vapor comprising one or more disilazanes of the formula (R) x H 3-x SiNHSi(R) x H 3-x , wherein each R is independently an organic group, and x is 1 to 3; directing the vapor comprising the one or more disilazanes to the substrate with the chemisorbed compounds thereon to form a refractory metal nitride barrier layer on the silicon-containing surface; providing a first electrode on the barrier layer; providing a high dielectric material over at least a portion of the first electrode; and providing a second electrode over the high dielectric material.
Claim 2
Independent Claim
187 words
A method of manufacturing a memory device, the method comprising: providing a substrate comprising a silicon-containing surface; providing a vapor comprising one or more refractory metal precursor compounds of the formula MY n (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M; directing the vapor comprising the one or more precursor compounds of the Formula I to the substrate and allowing the one or more compounds to chemisorb on the silicon-containing surface; providing a vapor comprising one or more disilazanes of the formula (R) x H 3-x SiNHSi(R) x H 3-x , wherein each R is independently an organic group, and x is 1 to 3; directing the vapor comprising the one or more disilazanes to the substrate with the chemisorbed compounds thereon to form a refractory metal nitride barrier layer on the silicon-containing surface; providing a first electrode on the barrier layer; providing a high dielectric material over at least a portion of the first electrode; and providing a second electrode over the high dielectric material.
Claim 3
Dependent Claim
15 words
The method of claim 1 wherein the substrate is a semiconductor substrate or substrate assembly.
Claim 4
Dependent Claim
42 words
The method of claim 1 further comprising providing a vapor comprising one or more silicon precursor compounds other than the disilazane and directing the vapor to the substrate with the chemisorbed compounds thereon to form a refractory metal silicon nitride barrier layer.
Claim 5
Dependent Claim
21 words
The method of claim 1 wherein providing the vapors and directing the vapors is accomplished using a chemical vapor deposition process.
Claim 6
Dependent Claim
27 words
The method of claim 1 wherein providing the vapors and directing the vapors is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles.
Claim 7
Dependent Claim
38 words
The method of claim 1 further comprising providing one or more metal-containing precursor compounds having a formula different than Formula I and directing the vapor comprising the one or more compounds different than Formula I to the substrate.
Claim 8
Dependent Claim
20 words
The method of claim 1 wherein the formed layer has a thickness of about 10 Å to about 100 Å.
Claim 9
Dependent Claim
14 words
The method of claim 1 wherein the formed layer is a diffusion barrier layer.
Claim 10
Dependent Claim
21 words
The method of claim 1 wherein Y is independently selected from the group consisting of F, Cl, I, and combinations thereof.
Claim 11
Dependent Claim
12 words
The method of claim 1 wherein each Y is a fluorine atom.
Claim 12
Dependent Claim
20 words
The method of claim 1 wherein M is selected from the group consisting of Ti, Nb, Ta, Mo, and W.
Claim 13
Dependent Claim
13 words
The method of claim 1 wherein M is tantalum and n is 5.
Claim 14
Dependent Claim
20 words
The method of claim 1 wherein each R is independently selected from the group consisting of a (C1–C6) organic group.
Claim 15
Dependent Claim
13 words
The method of claim 13 wherein each R is independently ethyl or methyl.
Claim 16
Dependent Claim
22 words
The method of claim 14 wherein the disilazane is tetramethyldisilazane (TMDS), (CH 3 ) 2 HSiNHSiH(CH 3 ) 2 , or hexamethyldisilazane.
Claim 17
Dependent Claim
10 words
The method of claim 15 wherein the disilazane is tetramethyldisilazane.
Claim 18
Dependent Claim
14 words
The method of claim 1 wherein the formed layer is a tantalum nitride layer.
Claim 19
Dependent Claim
16 words
The method of claim 2 wherein the semiconductor substrate or substrate assembly is a silicon wafer.
Claim 20
Dependent Claim
54 words
The method of claim 3 wherein one or more silicon precursor compounds comprises silane (SiH 4 ), disilane (Si 2 H 6 ), halogenated silanes, and organic silanes of the formula SiH p R 1 q wherein p=1–4, q=4–p, and each R 1 is independently an organic group having up to six carbon atoms.
Claim 21
Dependent Claim
20 words
The method of claim 19 wherein each R 1 is independently an organic group having up to two carbon atoms.
Claim 22
Dependent Claim
14 words
The method of claim 19 wherein each R 1 is independently an organic moiety.
Claim 23
Dependent Claim
46 words
The method of claim 3 wherein one or more silicon precursor compounds is selected from the group consisting of silane (SiH 4 ), disilane (Si 2 H 6 ), dichlorosilane (SiH 2 Cl 2 ), trichlorosilane (SiHCl 3 ), and trimethylsilane (SiH(CH 3 ) 3 ).
Claim 24
Dependent Claim
19 words
The method of claim 4 wherein the temperature of the substrate is about 100° C. to about 600° C.
Claim 25
Dependent Claim
21 words
The method of claim 4 wherein the chemical vapor deposition process has a pressure of about 0.1 torr to 10 torr.
Claim 26
Dependent Claim
19 words
The method of claim 5 wherein the temperature of the substrate is about 25° C. to about 400° C.
Claim 27
Dependent Claim
23 words
The method of claim 5 wherein the atomic layer vapor deposition process has a pressure of about 10 −4 torr to 1 torr.
Claim 28
Independent Claim
161 words
A method of manufacturing a memory device, the method comprising: providing a substrate comprising a silicon-containing surface; providing a vapor comprising one or more refractory metal precursor compounds of the formula MY n (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M; providing a vapor comprising one or more disilazanes of the formula (R) x H 3-x SiNHSi(R) x H 3-x , wherein each R is independently an organic group, and x is 1 to 3; contacting the vapors comprising the one or more refractory metal precursor compounds and the one or more disilazanes with the substrate to form a refractory metal nitride barrier layer on the silicon-containing surface; providing a first electrode on the barrier layer; providing a high dielectric material over at least a portion of the first electrode; and providing a second electrode over the high dielectric material.
Claim 29
Independent Claim
161 words
A method of manufacturing a memory device, the method comprising: providing a substrate comprising a silicon-containing surface; providing a vapor comprising one or more refractory metal precursor compounds of the formula MY n (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M; providing a vapor comprising one or more disilazanes of the formula (R) x H 3-x SiNHSi(R) x H 3-x , wherein each R is independently an organic group, and x is 1 to 3; contacting the vapors comprising the one or more refractory metal precursor compounds and the one or more disilazanes with the substrate to form a refractory metal nitride barrier layer on the silicon-containing surface; providing a first electrode on the barrier layer; providing a high dielectric material over at least a portion of the first electrode; and providing a second electrode over the high dielectric material.
Claim 30
Dependent Claim
15 words
The method of claim 27 wherein the substrate is a semiconductor substrate or substrate assembly.
Claim 31
Dependent Claim
42 words
The method of claim 27 further comprising providing a vapor comprising one or more silicon precursor compounds other than the disilazane and contacting the vapor with the substrate with the chemisorbed compounds thereon to form a refractory metal silicon nitride barrier layer.
Claim 32
Dependent Claim
21 words
The method of claim 27 wherein providing the vapors and contacting the vapors is accomplished using a chemical vapor deposition process.
Claim 33
Dependent Claim
27 words
The method of claim 27 wherein providing the vapors and contacting the vapors is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles.
Claim 34
Dependent Claim
38 words
The method of claim 27 further comprising providing one or more metal-containing precursor compounds having a formula different than Formula I and contacting the vapor comprising the one or more compounds different than Formula I with the substrate.
Claim 35
Independent Claim
187 words
A method of manufacturing a memory device, the method comprising: providing a substrate comprising a silicon-containing surface; providing a vapor comprising one or more refractory metal precursor compounds of the formula MY n (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M; contacting the vapor comprising the one or more precursor compounds of the Formula I with the substrate and allowing the one or more compounds to chemisorb on the silicon-containing surface; providing a vapor comprising one or more disilazanes of the formula (R) x H 3-x SiNHSi(R) x H 3-x , wherein each R is independently an organic group, and x is 1 to 3; contacting the vapor comprising the one or more disilazanes with the substrate with the chemisorbed compounds thereon to form a refractory metal nitride barrier layer on the silicon-containing surface; providing a first electrode on the barrier layer; providing a high dielectric material over at least a portion of the first electrode; and providing a second electrode over the high dielectric material.
Claim 36
Independent Claim
187 words
A method of manufacturing a memory device, the method comprising: providing a substrate comprising a silicon-containing surface; providing a vapor comprising one or more refractory metal precursor compounds of the formula MY n (Formula I), wherein M is a refractory metal, each Y is independently a halogen atom, and n is an integer selected to match the valence of the metal M; contacting the vapor comprising the one or more precursor compounds of the Formula I with the substrate and allowing the one or more compounds to chemisorb on the silicon-containing surface; providing a vapor comprising one or more disilazanes of the formula (R) x H 3-x SiNHSi(R) x H 3-x , wherein each R is independently an organic group, and x is 1 to 3; contacting the vapor comprising the one or more disilazanes with the substrate with the chemisorbed compounds thereon to form a refractory metal nitride barrier layer on the silicon-containing surface; providing a first electrode on the barrier layer; providing a high dielectric material over at least a portion of the first electrode; and providing a second electrode over the high dielectric material.
Claim 37
Dependent Claim
15 words
The method of claim 33 wherein the substrate is a semiconductor substrate or substrate assembly.
Claim 38
Dependent Claim
42 words
The method of claim 33 further comprising providing a vapor comprising one or more silicon precursor compounds other than the disilazane and contacting the vapor with the substrate with the chemisorbed compounds thereon to form a refractory metal silicon nitride barrier layer.
Claim 39
Dependent Claim
21 words
The method of claim 33 wherein providing the vapors and contacting the vapors is accomplished using a chemical vapor deposition process.
Claim 40
Dependent Claim
27 words
The method of claim 33 wherein providing the vapors and contacting the vapors is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles.
Claim 41
Dependent Claim
38 words
The method of claim 33 further comprising providing one or more metal-containing precursor compounds having a formula different than Formula I and contacting the vapor comprising the one or more compounds different than Formula I with the substrate.
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