Patent US6767795B2 successfully refreshed from Google Patents.
US6767795B2
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US
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Highly reliable amorphous high-k gate dielectric ZrOXNY
Assignee: Micron Technology Inc
•
Filing: 2002-01-17
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Granted: 2004-07-27
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Expires: 2022-01-17
Abstract
Abstract A gate dielectric and method of fabricating a gate dielectric that produces a more reliable and thinner equivalent oxide thickness than conventional SiO 2 gate oxides are provided. Gate dielectrics formed from metals such as zirconium are thermodynamically stable such that the gate dielectrics formed will have minimal reactions with a silicon substrate or other structures during any later high temperature processing stages. The addition of nitrogen to the microstructure of the gate dielectric promotes an amorphous phase that further improves the electrical properties of the gate dielectric. The process shown is performed at lower temperatures than the prior art, which inhibits unwanted species migration and unwanted reactions with the silicon substrate or other structures. By using a thermal evaporation technique to first deposit a metal layer, the underlying substrate surface smoothness is preserved, thus providing improved and more consistent electrical properties in the resulting gate dielectric.
Inventors
- 👤 Kie Y. Ahn
- 👤 Leonard Forbes
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 00:52
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6314; C; C23; C23C; C23C14/00; C23C14/06; C23C14/14; C23C14/16; C23C14/58; C23C14/5846; C23C14/5853; C23C14/586; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/0134; H10D64/01342; H10D64/01344; H10D64/01346; H10D64/60; H10D64/66; H10D64/68; H10D64/693; H10P14/6322; H10P14/65; H10P14/6516; H10P14/6518; H10P14/6524; H10P14/6526; H10P14/6529; H10P14/6319; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69395
Claims Analysis
Total Claims: 43
Claim 1
Independent Claim
58 words
A method of forming a gate dielectric on a transistor body region, comprising: controlling surface roughness during deposition by evaporation depositing a zirconium layer on the body region; oxidizing the zirconium layer to form a zirconium oxide layer on the body region; and nitriding the zirconium oxide layer to form a zirconium oxynitride layer on the body region.
Claim 2
Independent Claim
58 words
A method of forming a gate dielectric on a transistor body region, comprising: controlling surface roughness during deposition by evaporation depositing a zirconium layer on the body region; oxidizing the zirconium layer to form a zirconium oxide layer on the body region; and nitriding the zirconium oxide layer to form a zirconium oxynitride layer on the body region.
Claim 3
Dependent Claim
19 words
The method of claim 1 , wherein evaporation depositing the zirconium layer includes evaporation depositing by electron beam evaporation.
Claim 4
Dependent Claim
25 words
The method of claim 2 , wherein electron beam evaporation depositing the zirconium layer includes electron beam evaporation of a 99.9999% pure metal target material.
Claim 5
Dependent Claim
24 words
The method of claim 1 , wherein evaporation depositing the zirconium layer includes evaporation depositing at an approximate substrate temperature range of 150-400° C.
Claim 6
Dependent Claim
20 words
The method of claim 1 , wherein oxidizing the zirconium layer includes oxidizing at a temperature of approximately 400° C.
Claim 7
Independent Claim
40 words
A method of forming a gate dielectric on a transistor body region, comprising: evaporation depositing a metal layer on the body region: oxidizing the metal layer; nitriding the metal layer; wherein oxidizing the metal layer includes oxidizing with atomic oxygen.
Claim 8
Independent Claim
40 words
A method of forming a gate dielectric on a transistor body region, comprising: evaporation depositing a metal layer on the body region: oxidizing the metal layer; nitriding the metal layer; wherein oxidizing the metal layer includes oxidizing with atomic oxygen.
Claim 9
Dependent Claim
21 words
The method of claim 6 , wherein oxidizing the metal layer includes oxidizing using a krypton (Kr)/oxygen (O2) mixed plasma process.
Claim 10
Dependent Claim
15 words
The method of claim 6 , wherein nitriding the metal layer includes annealing in NH3.
Claim 11
Dependent Claim
19 words
The method of claim 8 , wherein annealing in NH3 includes annealing at a temperature of approximately 700° C.
Claim 12
Independent Claim
55 words
A method of forming a gate dielectric on a transistor body region, comprising: evaporation depositing a metal layer on the body region; oxidizing the metal layer using a krypton(Kr)/oxygen (O2) mixed plasma process to form a metal oxide layer on the body region; and nitriding the metal oxide layer to form a metal oxynitride layer.
Claim 13
Independent Claim
55 words
A method of forming a gate dielectric on a transistor body region, comprising: evaporation depositing a metal layer on the body region; oxidizing the metal layer using a krypton(Kr)/oxygen (O2) mixed plasma process to form a metal oxide layer on the body region; and nitriding the metal oxide layer to form a metal oxynitride layer.
Claim 14
Dependent Claim
18 words
The method of claim 10 , wherein evaporation depositing the metal layer includes evaporation depositing a zirconium layer.
Claim 15
Dependent Claim
19 words
The method of claim 10 , wherein evaporation depositing the metal layer includes evaporation depositing by electron beam evaporation.
Claim 16
Dependent Claim
25 words
The method of claim 12 , wherein electron beam evaporation depositing the metal layer includes electron beam evaporation of a 99.9999% pure metal target material.
Claim 17
Dependent Claim
24 words
The method of claim 10 , wherein evaporation depositing the metal layer includes evaporation depositing at an approximate substrate temperature range of 150-400° C.
Claim 18
Dependent Claim
16 words
The method of claim 10 , wherein nitriding the metal oxide layer includes annealing in NH3.
Claim 19
Dependent Claim
19 words
The method of claim 15 , wherein annealing in NH3 includes annealing at a temperature of approximately 700° C.
Claim 20
Independent Claim
71 words
A method of forming a transistor, comprising: forming first and second source/drain regions; forming a body region between the first and second source/drain regions; evaporation depositing a zirconium layer on the body region; oxidizing the zirconium layer to form a zirconium oxide layer on the body region; nitriding the zirconium oxide layer to form a zirconium oxynitride layer on the body region; and coupling a gate to the zirconium oxynitride layer.
Claim 21
Independent Claim
71 words
A method of forming a transistor, comprising: forming first and second source/drain regions; forming a body region between the first and second source/drain regions; evaporation depositing a zirconium layer on the body region; oxidizing the zirconium layer to form a zirconium oxide layer on the body region; nitriding the zirconium oxide layer to form a zirconium oxynitride layer on the body region; and coupling a gate to the zirconium oxynitride layer.
Claim 22
Dependent Claim
23 words
The method of claim 17 , wherein evaporation depositing the zirconium layer includes electron beam evaporation of a 99.9999% pure zirconium target material.
Claim 23
Dependent Claim
24 words
The method of claim 17 , wherein evaporation depositing the zirconium layer includes evaporation depositing at an approximate substrate temperature range of 150-400° C.
Claim 24
Independent Claim
80 words
A method of forming a transistor, comprising: forming first and second source/drain regions; forming a body region between the first and second source/drain regions; evaporation depositing a metal layer on the body region; oxidizing the metal layer to form a metal oxide layer on the body region; nitriding the metal oxide layer to form a metal oxynitride layer on the body region; coupling a gate to the metal oxynitride layer; wherein oxidizing the metal layer includes oxidizing with atomic oxygen.
Claim 25
Independent Claim
80 words
A method of forming a transistor, comprising: forming first and second source/drain regions; forming a body region between the first and second source/drain regions; evaporation depositing a metal layer on the body region; oxidizing the metal layer to form a metal oxide layer on the body region; nitriding the metal oxide layer to form a metal oxynitride layer on the body region; coupling a gate to the metal oxynitride layer; wherein oxidizing the metal layer includes oxidizing with atomic oxygen.
Claim 26
Dependent Claim
21 words
The method of claim 20 , wherein oxidizing the metal layer includes oxidizing using a krypton (Kr)/oxygen (O2) mixed plasma process.
Claim 27
Dependent Claim
23 words
The method of claim 20 , wherein nitriding the metal oxide layer includes incorporating 3-5 atomic percent nitrogen into the metal oxide layer.
Claim 28
Independent Claim
137 words
A method of forming a memory array, comprising: forming a number of access transistors, comprising: forming first and second source/drain regions; forming a body region between the first and second source/drain regions; evaporation depositing a zirconium layer on the body region; oxidizing the metal layer to form a zirconium oxide layer on the body region; nitriding the zirconium oxide layer to form a zirconium oxynitride layer on the body region; coupling a gate to the zirconium oxynitride layer; forming a number of wordlines coupled to a number of the gates of the number of access transistors; forming a number of sourcelines coupled to a number of the first source/drain regions of the number of access transistors; and forming a number of bitlines coupled to a number of the second source/drain regions of the number of access transistors.
Claim 29
Independent Claim
137 words
A method of forming a memory array, comprising: forming a number of access transistors, comprising: forming first and second source/drain regions; forming a body region between the first and second source/drain regions; evaporation depositing a zirconium layer on the body region; oxidizing the metal layer to form a zirconium oxide layer on the body region; nitriding the zirconium oxide layer to form a zirconium oxynitride layer on the body region; coupling a gate to the zirconium oxynitride layer; forming a number of wordlines coupled to a number of the gates of the number of access transistors; forming a number of sourcelines coupled to a number of the first source/drain regions of the number of access transistors; and forming a number of bitlines coupled to a number of the second source/drain regions of the number of access transistors.
Claim 30
Dependent Claim
23 words
The method of claim 23 , wherein evaporation depositing the zirconium layer includes electron beam evaporation of a 99.9999% pure zirconium target material.
Claim 31
Dependent Claim
15 words
The method of claim 23 ,wherein oxidizing the zirconium layer includes oxidizing with atomic oxygen.
Claim 32
Dependent Claim
21 words
The method of claim 23 , wherein oxidizing the zirconium layer includes oxidizing using a krypton (Kr)/oxygen (O2) mixed plasma process.
Claim 33
Dependent Claim
16 words
The method of claim 23 , wherein nitriding the zirconium oxide layer includes annealing in NH3.
Claim 34
Independent Claim
158 words
A method of forming an information handling system, comprising: forming a processor; forming a memory array, comprising: forming a number of access transistors, comprising: forming first and second source/drain regions; forming a body region between the first and second source/drain regions; evaporation depositing a zirconium layer on the body region; oxidizing the zirconium layer to form a metal oxide layer on the body region; nitriding the zirconium oxide layer to form a zirconium oxynitride layer on the body region; coupling a gate to the zirconium oxynitride layer; forming a number of wordlines coupled to a number of the gates of the number of access transistors; forming a number of sourcelines coupled to a number of the first source/drain regions of the number of access transistors; forming a number of bitlines coupled to a number of the second source/drain regions of the number of access transistors; and forming a system bus that couples the processor to the memory array.
Claim 35
Independent Claim
158 words
A method of forming an information handling system, comprising: forming a processor; forming a memory array, comprising: forming a number of access transistors, comprising: forming first and second source/drain regions; forming a body region between the first and second source/drain regions; evaporation depositing a zirconium layer on the body region; oxidizing the zirconium layer to form a metal oxide layer on the body region; nitriding the zirconium oxide layer to form a zirconium oxynitride layer on the body region; coupling a gate to the zirconium oxynitride layer; forming a number of wordlines coupled to a number of the gates of the number of access transistors; forming a number of sourcelines coupled to a number of the first source/drain regions of the number of access transistors; forming a number of bitlines coupled to a number of the second source/drain regions of the number of access transistors; and forming a system bus that couples the processor to the memory array.
Claim 36
Dependent Claim
19 words
The method of claim 28 , wherein evaporation depositing the zirconium layer includes evaporation depositing by electron beam evaporation.
Claim 37
Dependent Claim
25 words
The method of claim 29 , wherein electron beam evaporation depositing the zirconium layer includes electron beam evaporation of a 99.9999% pure zirconium target material.
Claim 38
Dependent Claim
16 words
The method of claim 28 , wherein oxidizing the zirconium layer includes oxidizing with atomic oxygen.
Claim 39
Dependent Claim
21 words
The method of claim 28 , wherein oxidizing the zirconium layer includes oxidizing using a krypton (Kr)/oxygen (O2) mixed plasma process.
Claim 40
Dependent Claim
16 words
The method of claim 28 , wherein nitriding the zirconium oxide layer includes annealing in NH3.
Claim 41
Independent Claim
54 words
A method of forming a gate dielectric on a transistor body region, comprising: electron beam evaporation depositing a zirconium layer on the body region; oxidizing the zirconium layer to form a zirconium oxide layer on the body region; and nitriding the zirconium oxide layer to form a zirconium oxynitride layer on the body region.
Claim 42
Independent Claim
54 words
A method of forming a gate dielectric on a transistor body region, comprising: electron beam evaporation depositing a zirconium layer on the body region; oxidizing the zirconium layer to form a zirconium oxide layer on the body region; and nitriding the zirconium oxide layer to form a zirconium oxynitride layer on the body region.
Claim 43
Dependent Claim
14 words
The method of claim 34 , wherein the zirconium oxynitride layer is substantially amorphous.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2007-07-27 | 2008-01-26 | 2008-07-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2011-07-27 | 2012-01-26 | 2012-07-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2015-07-27 | 2016-01-26 | 2016-07-27 | $7700.00 | Window Closed / Lapsed |