US6664159B2
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US
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Mixed metal nitride and boride barrier layers
Assignee: Micron Technology Inc
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Filing: 2002-07-01
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Granted: 2003-12-16
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Expires: 2022-07-01
Abstract
Abstract Mixed metal aluminum nitride and boride diffusion barriers and electrodes for integrated circuits, particularly for DRAM cell capacitors. Also provided are methods for CVD deposition of M x Al y N z B w alloy diffusion barriers, wherein M is Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, or W; x is greater than zero; y is greater than or equal to zero; the sum of z and w is greater than zero; and wherein when y is zero, z and w are both greater than zero.
Inventors
- 👤 Brian A. Vaartstra
- 👤 Donald L. Westmoreland
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:14
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/046; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/696; H10D62/00; H10D62/80; H10D62/83; H10D64/00; H10D64/60; H10D64/62; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10W20/033; H10W20/069; H10W20/40; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10B12/0335; H10B12/30; H10B12/31; H10B12/312; H10B12/48; H10B12/485; H10D1/711; H10D1/716; Y; Y10; Y10S; Y10S438/00; Y10S438/932
Claims Analysis
Total Claims: 37
Claim 1
Independent Claim
75 words
A method for fabricating a capacitor comprising the steps of: forming a first conductive layer; forming a dielectric layer; forming a second conductive layer; wherein at least one of said first and second conductive layers is a material having the formula M x Al y N z B w , wherein M is Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, or W, and wherein x, y. z, and w are all greater than 0.
Claim 2
Independent Claim
75 words
A method for fabricating a capacitor comprising the steps of: forming a first conductive layer; forming a dielectric layer; forming a second conductive layer; wherein at least one of said first and second conductive layers is a material having the formula M x Al y N z B w , wherein M is Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, or W, and wherein x, y. z, and w are all greater than 0.
Claim 3
Dependent Claim
27 words
The method of claim 1 wherein said one of said first and second conductive layers is a diffusion barrier interposed between a capacitor electrode and said dielectric.
Claim 4
Dependent Claim
31 words
The method wherein of claim 1 said one of said first and second conductive layers is a diffusion barrier and a capacitor electrode is interposed between said barrier and said dielectric.
Claim 5
Dependent Claim
42 words
The method of claim 1 wherein said dielectric is selected from the group consisting of tantalum pentoxide (Ta 2 O 5 ), Strontium Titanate (ST), Barium Strontium Titanate (BST), Lead Zirconium Titanate (PZT), Strontium Bismuth Tantalate (SBT) and Bismuth Zirconium Titanate (BZT).
Claim 6
Dependent Claim
22 words
The method of claim 1 wherein said M x Al y N z B w layer is formed by chemical vapor deposition.
Claim 7
Dependent Claim
35 words
The method of claim 5 wherein said M x Al y N z B w layer comprises a metal selected from the group consisting of Ti, Zr, Hf, Ta and Nb and x+y=1 and z+w/2=1.
Claim 8
Dependent Claim
32 words
The method of claim 5 wherein said M x Al y N z B w layer comprises a metal selected from the group consisting of W and Mo and x+y=1 and z+2w=1.
Claim 9
Dependent Claim
29 words
The method of claim 5 wherein said chemical vapor deposition is conducted in a reaction chamber at a temperature in the range of about 100 to about 600° C.
Claim 10
Dependent Claim
29 words
The method of claim 5 wherein said chemical vapor deposition is conducted in a reaction chamber at a temperature in the range of about 250 to about 550° C.
Claim 11
Dependent Claim
30 words
The method of claim 5 wherein said chemical vapor deposition is conducted in a reaction chamber at a pressure in the range of about 0.1 torr to about 10 torr.
Claim 12
Dependent Claim
28 words
The method of claim 5 wherein said chemical vapor deposition is conducted by depositing a material of the formula M 0.7 Al 0.3 N 0.3 B 1.4 .
Claim 13
Dependent Claim
28 words
The method of claim 5 wherein said chemical vapor deposition is conducted by depositing a material of the formula M 0.7 Al 0.3 N 0.3 B 0.35 .
Claim 14
Dependent Claim
20 words
The method of claim 5 wherein said chemical vapor deposition is conducted by depositing M, aluminum, nitrogen and boron simultaneously.
Claim 15
Dependent Claim
21 words
The method of claim 5 wherein said vapor deposition is conducted using a reactant gas to deposit said boron and nitrogen.
Claim 16
Dependent Claim
21 words
The method of claim 5 wherein said conductive barrier layer is formed by chemical vapor deposition of a metal halide composition.
Claim 17
Dependent Claim
18 words
The method of claim 5 wherein said chemical vapor deposition is conducted by deposition of a metallorganic precursor.
Claim 18
Dependent Claim
46 words
The method of claim 5 , wherein said chemical vapor deposition is conducted using an aluminum precursor selected from the group consisting of DMEAA, dimethylaluminumhydride ethyldimethylamine adduct, dimethyl aluminum hydride, an alkyl aluminum compound, an alkylaminealuminum compound, and any adducted complexes of the above-named aluminum-containing compounds.
Claim 19
Dependent Claim
24 words
The method of claim 5 , wherein wherein said M is titanium and a single gas serves as titanium precursor and a nitrogen precursor.
Claim 20
Dependent Claim
20 words
The method of claim 18 , wherein said titanium and nitrogen precursor is Ti(N(CH 3 ) 2 ) 4 .
Claim 21
Independent Claim
212 words
A method for fabricating a capacitor having a first and a second electrode, comprising the following steps: forming an insulative layer overlying a substrate; forming an opening in said insulative layer in order to expose said substrate; forming a conductive plug in said opening, said conductive plug forming a first portion of the first electrode of said capacitor, said conductive plug recessed below a surface of said insulative layer; forming a first conductive layer, for preventing diffusion of atoms, in said opening and in contact with said conductive plug such that said first conductive layer is surrounded on sidewalls by said insulative layer, said first conductive layer forming a second portion of the first electrode, said first conductive layer being formed of a M x Al y N z B w material deposited by chemical vapor deposition; forming a second conductive layer overlying said first conductive layer, said second conductive layer forming a third portion of the first electrode; wherein said first conductive layer is at least partially between said second conductive layer and said conductive plug; wherein M is Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, or W; and wherein x is greater than zero; y is greater than zero; the sum of z and w is greater than zero.
Claim 22
Independent Claim
212 words
A method for fabricating a capacitor having a first and a second electrode, comprising the following steps: forming an insulative layer overlying a substrate; forming an opening in said insulative layer in order to expose said substrate; forming a conductive plug in said opening, said conductive plug forming a first portion of the first electrode of said capacitor, said conductive plug recessed below a surface of said insulative layer; forming a first conductive layer, for preventing diffusion of atoms, in said opening and in contact with said conductive plug such that said first conductive layer is surrounded on sidewalls by said insulative layer, said first conductive layer forming a second portion of the first electrode, said first conductive layer being formed of a M x Al y N z B w material deposited by chemical vapor deposition; forming a second conductive layer overlying said first conductive layer, said second conductive layer forming a third portion of the first electrode; wherein said first conductive layer is at least partially between said second conductive layer and said conductive plug; wherein M is Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, or W; and wherein x is greater than zero; y is greater than zero; the sum of z and w is greater than zero.
Claim 23
Dependent Claim
56 words
The method as specified in claim 20 , further comprising the steps of: creating a dielectric layer to overlie said second conductive layer, said first conductive layer substantially preventing oxidation of said dielectric layer; and creating the second electrode overlying said dielectric layer, said first and the second electrode and said dielectric layer forming the capacitor.
Claim 24
Dependent Claim
27 words
The method as specified in claim 20 , wherein said step of forming the second electrode comprises sputtering an electrically conductive material to overly said dielectric layer.
Claim 25
Dependent Claim
70 words
The method as specified in claim 20 , wherein said step of forming said first conductive layer comprises the following steps: admitting a first metal precursor composition to a chemical vapor deposition reaction chamber, admitting an aluminum precursor composition to said chemical vapor deposition reaction chamber, applying sufficient nitrogen and boron reactant gases to said chemical vapor deposition reaction chamber to cause deposition of an amorphous metal, aluminum, nitride-boride alloy.
Claim 26
Dependent Claim
55 words
The method as specified in claim 20 , wherein said step of forming said dielectric layer comprises depositing a dielectric material from a group of materials consisting of tantalum pentoxide (Ta 2 O 5 ), Barium Strontium Titanate (BST), Strontium Titanate (ST), Lead Zirconium Titanate (PZT), Strontium Bismuth Tantalate (SBT) and Bismuth Zirconium Titanate (BZT).
Claim 27
Dependent Claim
23 words
The method as specified in claim 20 , further comprising the step of planarizing said insulative layer prior to forming said conductive plug.
Claim 28
Dependent Claim
24 words
The method as specified in claim 20 , wherein said step of forming said conductive plug comprises depositing in-situ doped polysilicon in said opening.
Claim 29
Dependent Claim
42 words
The method as specified in claim 20 , wherein the step of forming said second conductive layer comprises forming said second conductive layer with a material selected from a group consisting of refractory metals, noble metals, conductive metal oxides, and metal nitrides.
Claim 30
Independent Claim
70 words
A method for fabricating a capacitor comprising the steps of: forming a first conductive layer; forming a dielectric layer, forming a second conductive layer, wherein at least one of said first and second conductive layers is deposited by chemical vapor deposition and is a material having the formula M 0.7 Al 0.3 N 0.3 B 1.4 , wherein M is Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, or W.
Claim 31
Independent Claim
70 words
A method for fabricating a capacitor comprising the steps of: forming a first conductive layer; forming a dielectric layer, forming a second conductive layer, wherein at least one of said first and second conductive layers is deposited by chemical vapor deposition and is a material having the formula M 0.7 Al 0.3 N 0.3 B 1.4 , wherein M is Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, or W.
Claim 32
Independent Claim
70 words
A method for fabricating a capacitor comprising the steps of: forming a first conductive layer; forming a dielectric layer, forming a second conductive layer, wherein at least one of said first and second conductive layers is deposited by chemical vapor deposition and is a material having the formula M 0.7 Al 0.3 N 0.3 B 0.35 , wherein M is Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, or W.
Claim 33
Independent Claim
70 words
A method for fabricating a capacitor comprising the steps of: forming a first conductive layer; forming a dielectric layer, forming a second conductive layer, wherein at least one of said first and second conductive layers is deposited by chemical vapor deposition and is a material having the formula M 0.7 Al 0.3 N 0.3 B 0.35 , wherein M is Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, or W.
Claim 34
Independent Claim
117 words
A method for fabricating a capacitor comprising the steps of: forming a first conductive layer; forming a dielectric layer, forming a second conductive layer, wherein at least one of said first and second conductive layers is a material having the formula M x Al y N z B w , wherein M is Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, or W; x is greater than zero; y is greater than or equal to zero; the sum of z and w is greater than zero; and wherein when y is zero, z and w are both greater than zero, said material being formed by chemical vapor deposition, wherein M, aluminum, nitrogen, and boron are deposited simultaneously.
Claim 35
Independent Claim
117 words
A method for fabricating a capacitor comprising the steps of: forming a first conductive layer; forming a dielectric layer, forming a second conductive layer, wherein at least one of said first and second conductive layers is a material having the formula M x Al y N z B w , wherein M is Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, or W; x is greater than zero; y is greater than or equal to zero; the sum of z and w is greater than zero; and wherein when y is zero, z and w are both greater than zero, said material being formed by chemical vapor deposition, wherein M, aluminum, nitrogen, and boron are deposited simultaneously.
Claim 36
Independent Claim
259 words
A method for fabricating a capacitor having a first and a second electrode, comprising the following steps: forming an insulative layer overlying a substrate; forming an opening in said insulative layer in order to expose said substrate; forming a conductive plug in said opening, said conductive plug forming a first portion of the first electrode of said capacitor, said conductive plug recessed below a surface of said insulative layer; forming a first conductive layer, for preventing diffusion of atoms, in said opening and overlying said conductive plug such that said first conductive layer is surrounded on sidewalls by said insulative layer, said first conductive layer forming a second portion of the first electrode, said first conductive layer being formed of a M x Al y N z B w material, wherein forming said first conductive layer comprises admitting a first metal precursor composition to a chemical vapor deposition reaction chamber, admitting an aluminum precursor composition to said chemical vapor deposition reaction chamber, applying sufficient nitrogen and boron reactant gases to said chemical vapor deposition reaction chamber to cause deposition of an amorphous metal, aluminum, nitride-boride alloy; forming a second conductive layer overlying said first conductive layer, said second conductive layer forming a third portion of the first electrode, and wherein M is Ti, Zr, Hf V, Nb, Ta, Cr, Mo, or W, x is greater than zero, y is greater than or equal to zero, the sum of z and w is greater than zero, and wherein when y is zero, z and w are both greater than zero.
Claim 37
Independent Claim
259 words
A method for fabricating a capacitor having a first and a second electrode, comprising the following steps: forming an insulative layer overlying a substrate; forming an opening in said insulative layer in order to expose said substrate; forming a conductive plug in said opening, said conductive plug forming a first portion of the first electrode of said capacitor, said conductive plug recessed below a surface of said insulative layer; forming a first conductive layer, for preventing diffusion of atoms, in said opening and overlying said conductive plug such that said first conductive layer is surrounded on sidewalls by said insulative layer, said first conductive layer forming a second portion of the first electrode, said first conductive layer being formed of a M x Al y N z B w material, wherein forming said first conductive layer comprises admitting a first metal precursor composition to a chemical vapor deposition reaction chamber, admitting an aluminum precursor composition to said chemical vapor deposition reaction chamber, applying sufficient nitrogen and boron reactant gases to said chemical vapor deposition reaction chamber to cause deposition of an amorphous metal, aluminum, nitride-boride alloy; forming a second conductive layer overlying said first conductive layer, said second conductive layer forming a third portion of the first electrode, and wherein M is Ti, Zr, Hf V, Nb, Ta, Cr, Mo, or W, x is greater than zero, y is greater than or equal to zero, the sum of z and w is greater than zero, and wherein when y is zero, z and w are both greater than zero.
References Cited (Backward Citations)
US5414301A
Cited
US5142438A
Cited
US5690727A
Cited
US5406447A
Cited
US5198386A
Cited
US5688724A
Cited
US5187638A
Cited
US5486492A
Cited
US5605857A
Cited
US5478772A
Cited
US5506166A
Cited
US5498562A
Cited
US5567964A
Cited
US5362632A
Cited
US5851896A
Cited
US5504041A
Cited
US5585300A
Cited
US5696018A
Cited
US5665628A
Cited
US5679980A
Cited
US5489548A
Cited
US5717250A
Cited
US5464786A
Cited
US5654224A
Cited
US5834803A
Cited
US5568352A
Cited
EP0770862A1
Cited
US5654222A
Cited
US5663088A
Cited
US5686339A
Cited
US5895938A
Cited
US5760474A
Cited
US6054331A
Cited
US6365517B1
Cited
US6294420B1
Cited
US5899740A
Cited
US6090697A
Cited
US6284646B1
Cited
US6320213B1
Cited
US6455419B1
Cited
US6100200A
Cited
US6194754B1
Cited
US6580111B2
Cited
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