US6284646B1
Expired / Lapsed
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Methods of forming smooth conductive layers for integrated circuit devices
Assignee: Samsung Electronics Co Ltd
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Filing: 1998-08-19
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Granted: 2001-09-04
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Expires: 2018-08-19
Abstract
Abstract A method for forming a metal layer for an integrated circuit device includes forming a first conductive layer on an integrated circuit substrate. While forming the first conductive layer, a reflection index of the first conductive layer is monitored, and the formation of the first conductive layer is terminated when the reflection index of the first conductive layer reaches a predetermined value. More particularly, the first conductive layer can be an aluminum layer having a thickness in the range of approximately 500 Angstroms to 1500 Angstroms.
Inventors
- 👤 Hyeun-seog Leem
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:13
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/042; H10W20/045; C; C23; C23C; C23C16/00; C23C16/44; C23C16/52; H10P14/412; H10W20/033; H10W20/036; H10W20/056
Claims Analysis
Total Claims: 34
Claim 1
Independent Claim
74 words
A method for forming a metal layer for an integrated circuit device, the method comprising the steps of: forming a first conductive layer on an integrated circuit substrate wherein the first conductive layer comprises aluminum; while forming the first conductive layer, monitoring a reflection index of the first conductive layer comprising aluminum; and terminating forming the first conductive layer comprising aluminum when the reflection index of the first conductive layer reaches a predetermined value.
Claim 2
Independent Claim
74 words
A method for forming a metal layer for an integrated circuit device, the method comprising the steps of: forming a first conductive layer on an integrated circuit substrate wherein the first conductive layer comprises aluminum; while forming the first conductive layer, monitoring a reflection index of the first conductive layer comprising aluminum; and terminating forming the first conductive layer comprising aluminum when the reflection index of the first conductive layer reaches a predetermined value.
Claim 3
Dependent Claim
71 words
A method according to claim 1 wherein the step of terminating forming the first conductive layer is followed by the steps of: forming a second conductive layer on the first conductive layer opposite the substrate; while forming the second conductive layer, monitoring a reflection index of the second conductive layer; and terminating forming the second conductive layer when the reflection index of the second conductive layer reaches a second predetermined value.
Claim 4
Dependent Claim
52 words
A method according to claim 2 wherein the step of terminating forming the second conductive layer is followed by the step of: patterning the first and second conductive layers to form a conductive line on the substrate, the conductive line comprising a laminated structure including the first and second patterned conductive layers.
Claim 5
Dependent Claim
27 words
A method according to claim 2 wherein the first and second conductive layers each have a thickness in the range of approximately 500 Angstroms to 1500 Angstroms.
Claim 6
Dependent Claim
15 words
A method according to claim 2 wherein the first and second conductive layers comprise aluminum.
Claim 7
Dependent Claim
20 words
A method according to claim 2 wherein the first and second conductive layers are formed using chemical vapor deposition (CVD).
Claim 8
Dependent Claim
55 words
A method according to claim 2 wherein the step of forming the second conductive layer is preceded by the step of: forming a buffer layer on the first conductive layer opposite the substrate after terminating forming the first conductive layer wherein the buffer layer comprises a material different than that of the first conductive layer.
Claim 9
Dependent Claim
77 words
A method according to claim 7 wherein the buffer layer comprises a material chosen from the group consisting of copper (Cu), zinc (Zn), titanium (Ti), tungsten (W), tantalum (Ta), titanium nitride (Ti—N), tungsten nitride (Ti—N), tantalum nitride (Ta—N), titanium silicon nitride (Ti—Si—N), titanium boron nitride (Ti—B—N), titanium aluminum nitride (Ti—Al—N), tungsten boron nitride (W—B—N), tungsten silicon nitride (W—Si—N), tungsten aluminum nitride (W—Al—N), tantalum silicon nitride (Ta—Si—N), tantalum boron nitride (Ta—B—N), tantalum aluminum nitride (Ta—Al—N), and combinations thereof.
Claim 10
Dependent Claim
40 words
A method according to claim 7 wherein the buffer layer is formed using a technique chosen from the group consisting of physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD), atomic layer epitaxy (ALE), and thermal treatment.
Claim 11
Dependent Claim
49 words
A method according to claim 7 wherein the step of forming the buffer layer comprises exposing the substrate to a gas chosen from the group consisting of silane (SiH 4 ), tungsten hexaflouride (WF 6 ), diborane hexaflouride (B 2 H 6 ), and titanium chloride (TiCl 4 ).
Claim 12
Dependent Claim
36 words
A method according to claim 7 wherein the step of forming the buffer layer comprises maintaining the substrate at a temperature in the range of approximately 100° C. to 350° C. while forming the buffer layer.
Claim 13
Dependent Claim
71 words
A method according to claim 2 wherein the step of terminating forming the second conductive layer is followed by the steps of: forming a third conductive layer on the second conductive layer opposite the substrate; while forming the third conductive layer, monitoring a reflection index of the third conductive layer; and terminating forming the third conductive layer when the reflection index of the third conductive layer reaches a third predetermined value.
Claim 14
Dependent Claim
17 words
A method according to claim 1 wherein the first conductive layer is formed using chemical vapor deposition.
Claim 15
Dependent Claim
13 words
A method according to claim 1 wherein the first conductive layer comprises aluminum.
Claim 16
Dependent Claim
33 words
A method according to claim 14 wherein the first conductive aluminum layer has a thickness in the range of approximately 500 Angstroms to 1500 Angstroms after terminating forming the first conductive aluminum layer.
Claim 17
Dependent Claim
29 words
A method according to claim 1 wherein the predetermined value of the reflection index of the first conductive layer is a maximum reflection index of the first conductive layer.
Claim 18
Dependent Claim
70 words
A method according to claim 1 wherein the step of forming the first conductive layer is preceded by the steps of: forming an insulating layer on the integrated circuit substrate wherein the insulating layer has a contact hole therein exposing a portion of the integrated circuit substrate; and forming a diffusion barrier layer on the exposed portion of the integrated circuit substrate and on a sidewall of the contact hole.
Claim 19
Dependent Claim
78 words
A method according to claim 17 wherein the diffusion barrier layer comprises a material chosen from the group consisting of copper (Cu), zinc (Zn); titanium (Ti), tungsten (W), tantalum (Ta), titanium nitride (Ti—N), tungsten nitride (Ti—N), tantalum nitride (Ta—N), titanium silicon nitride (Ti—Si—N), titanium boron nitride (Ti—B—N), titanium aluminum nitride (Ti—Al—N), tungsten boron nitride (W—B—N), tungsten silicon nitride (W—Si—N), tungsten aluminum nitride (W—Al—N), tantalum silicon nitride (Ta—Si—N), tantalum boron nitride (Ta—B—N), tantalum aluminum nitride (Ta—Al—N), and combinations thereof.
Claim 20
Dependent Claim
41 words
A method according to claim 17 wherein the diffusion barrier layer is formed using a technique chosen from the group consisting of physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD), atomic layer epitaxy (ALE), and thermal treatment.
Claim 21
Dependent Claim
50 words
A method according to claim 17 wherein the step of forming the diffusion barrier layer comprises exposing the substrate to a gas chosen from the group consisting of silane (SiH 4 ), tungsten hexaflouride (WF 6 ), diborane hexaflouride (B 2 H 6 ), and titanium chloride (TiCl 4 ).
Claim 22
Dependent Claim
38 words
A method according to claim 17 wherein the step of forming the diffusion barrier layer comprises maintaining the substrate at a temperature in the range of approximately 100° C. to 350° C. while forming the diffusion barrier layer.
Claim 23
Independent Claim
165 words
A method for forming a metal layer for an integrated circuit device, the method comprising the steps of: forming a first conductive layer on an integrated circuit substrate; while forming the first conductive layer, monitoring a reflection index of the first conductive layer; terminating forming the first conductive layer when the reflection index of the first conductive layer reaches a predetermined value; forming a buffer layer on the first conductive layer opposite the substrate after terminating forming the first conductive layer wherein the buffer layer comprises a material different than that of the first conductive layer, wherein the buffer layer has a thickness less than a thickness of the first conductive layer; after forming the buffer layer, forming a second conductive layer on the buffer layer opposite the substrate; while forming the second conductive layer, monitoring a reflection index of the second conductive layer; and terminating forming the second conductive layer when the reflection index of the second conductive layer reaches a second predetermined value.
Claim 24
Independent Claim
165 words
A method for forming a metal layer for an integrated circuit device, the method comprising the steps of: forming a first conductive layer on an integrated circuit substrate; while forming the first conductive layer, monitoring a reflection index of the first conductive layer; terminating forming the first conductive layer when the reflection index of the first conductive layer reaches a predetermined value; forming a buffer layer on the first conductive layer opposite the substrate after terminating forming the first conductive layer wherein the buffer layer comprises a material different than that of the first conductive layer, wherein the buffer layer has a thickness less than a thickness of the first conductive layer; after forming the buffer layer, forming a second conductive layer on the buffer layer opposite the substrate; while forming the second conductive layer, monitoring a reflection index of the second conductive layer; and terminating forming the second conductive layer when the reflection index of the second conductive layer reaches a second predetermined value.
Claim 25
Independent Claim
163 words
A method for forming a metal layer for an integrated circuit device, the method comprising the steps of: forming a first conductive layer on an integrated circuit substrate; while forming the first conductive layer, monitoring a reflection index of the first conductive layer; terminating forming the first conductive layer when the reflection index of the first conductive layer reaches a predetermined value; forming a buffer layer on the first conductive layer opposite the substrate after terminating forming the first conductive layer wherein the buffer layer comprises a material different than that of the first conductive layer, wherein the buffer layer has a thickness of no more than approximately 100 Angstroms; after forming the buffer layer, forming a second conductive layer on the buffer layer opposite the substrate; while forming the second conductive layer, monitoring a reflection index of the second conductive layer; and terminating forming the second conductive layer when the reflection index of the second conductive layer reaches a second predetermined value.
Claim 26
Independent Claim
163 words
A method for forming a metal layer for an integrated circuit device, the method comprising the steps of: forming a first conductive layer on an integrated circuit substrate; while forming the first conductive layer, monitoring a reflection index of the first conductive layer; terminating forming the first conductive layer when the reflection index of the first conductive layer reaches a predetermined value; forming a buffer layer on the first conductive layer opposite the substrate after terminating forming the first conductive layer wherein the buffer layer comprises a material different than that of the first conductive layer, wherein the buffer layer has a thickness of no more than approximately 100 Angstroms; after forming the buffer layer, forming a second conductive layer on the buffer layer opposite the substrate; while forming the second conductive layer, monitoring a reflection index of the second conductive layer; and terminating forming the second conductive layer when the reflection index of the second conductive layer reaches a second predetermined value.
Claim 27
Independent Claim
117 words
A method of forming a conductive layer on an integrated circuit substrate, the method comprising the steps of: forming a first aluminum layer on the integrated circuit substrate wherein the step of forming the first aluminum layer comprises, monitoring a reflection index of the first aluminum layer while forming the first aluminum layer, and terminating forming the first aluminum layer when the reflection index of the first aluminum layer reaches a predetermined value; forming a conductive buffer layer on the first aluminum layer opposite the substrate wherein the conductive buffer layer comprises a material other than aluminum; and forming a second aluminum layer on the conductive buffer layer opposite integrated circuit substrate and the first aluminum layer.
Claim 28
Independent Claim
117 words
A method of forming a conductive layer on an integrated circuit substrate, the method comprising the steps of: forming a first aluminum layer on the integrated circuit substrate wherein the step of forming the first aluminum layer comprises, monitoring a reflection index of the first aluminum layer while forming the first aluminum layer, and terminating forming the first aluminum layer when the reflection index of the first aluminum layer reaches a predetermined value; forming a conductive buffer layer on the first aluminum layer opposite the substrate wherein the conductive buffer layer comprises a material other than aluminum; and forming a second aluminum layer on the conductive buffer layer opposite integrated circuit substrate and the first aluminum layer.
Claim 29
Dependent Claim
26 words
A method according to claim 24 wherein the first and second aluminum layers each have thicknesses in the range of approximately 500 Angstroms to 1500 Angstroms.
Claim 30
Independent Claim
87 words
A method of forming a conductive layer on an integrated circuit substrate, the method comprising the steps of: forming a first aluminum layer on the integrated circuit substrate; forming a conductive buffer layer on the first aluminum layer opposite the substrate wherein the conductive buffer layer comprises a material other than aluminum wherein the conductive buffer layer has a thickness of not more than approximately 100 Angstroms, and forming a second aluminum layer on the conductive buffer layer opposite integrated circuit substrate and the first aluminum layer.
Claim 31
Independent Claim
87 words
A method of forming a conductive layer on an integrated circuit substrate, the method comprising the steps of: forming a first aluminum layer on the integrated circuit substrate; forming a conductive buffer layer on the first aluminum layer opposite the substrate wherein the conductive buffer layer comprises a material other than aluminum wherein the conductive buffer layer has a thickness of not more than approximately 100 Angstroms, and forming a second aluminum layer on the conductive buffer layer opposite integrated circuit substrate and the first aluminum layer.
Claim 32
Dependent Claim
51 words
A method according to claim 26 wherein the step of forming the first aluminum layer comprises: monitoring a reflection index of the first aluminum layer while forming the first aluminum layer; and terminating forming the first aluminum layer when the reflection index of the first aluminum layer reaches a predetermined value.
Claim 33
Independent Claim
89 words
A method of forming a conductive layer on an integrated circuit substrate, the method comprising the steps of: forming a first aluminum layer on the integrated circuit substrate; forming a conductive buffer layer on the first aluminum layer opposite the substrate wherein the conductive buffer layer comprises a material other than aluminum wherein the conductive buffer layer has a thickness less than a thickness of the first aluminum layer; and forming a second aluminum layer on the conductive buffer layer opposite integrated circuit substrate and the first aluminum layer.
Claim 34
Independent Claim
89 words
A method of forming a conductive layer on an integrated circuit substrate, the method comprising the steps of: forming a first aluminum layer on the integrated circuit substrate; forming a conductive buffer layer on the first aluminum layer opposite the substrate wherein the conductive buffer layer comprises a material other than aluminum wherein the conductive buffer layer has a thickness less than a thickness of the first aluminum layer; and forming a second aluminum layer on the conductive buffer layer opposite integrated circuit substrate and the first aluminum layer.
References Cited (Backward Citations)
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