US5690727A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Thin films of ABO3 with excess B-site modifiers and method of fabricating integrated circuits with same
Assignee: Panasonic Holdings Corp
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Filing: 1997-01-27
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Granted: 1997-11-25
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Expires: 2017-01-27
Abstract
Abstract A method for fabricating an integrated circuit capacitor having a dielectric layer comprising BST with excess B-site material, such as titanium, added. A polyoxyalkylated metal liquid precursor solution is prepared comprising a stock solution of BST of greater then 99.999% purity blended with excess B-site material such as titanium such that the titanium is in the range of 0-100 mol %. A xylene exchange is then performed to adjust the viscosity of the solution for spin-on application to a substrate. The precursor is spun on a first electrode, dried at 400 DEG C. for 2 minutes, then annealed at 650 DEG C. to 800 DEG C. for about an hour to form a layer of BST with excess titanium. A second electrode is deposited, patterned, and annealed at between 650 DEG C. to 800 DEG C. for about 30 minutes. The resultant capacitor exhibits an enlarged dielectric constant with only a small increase in leakage current.
Inventors
- 👤 Masamichi Azuma
- 👤 Carlos A. Paz de Araujo
- 👤 Michael C. Scott
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:37
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/69398; C; C04; C04B; C04B35/00; C04B35/01; C04B35/46; C04B35/462; C04B35/465; C04B35/468; C04B35/4682; C04B35/47; C04B35/622; C04B35/626; C04B35/62605; C04B35/62625; C04B35/6264; C23; C23C; C23C16/00; C23C16/44; C23C16/4412; C23C16/448; C23C16/4486; C23C16/455; C23C16/45561; C23C16/45563; C23C16/4558; C23C16/46; C23C16/48; C23C16/482; C23C16/52; C23C18/00; C23C18/02; C23C18/12; C23C18/1204; C23C18/1208; C23C18/1216; C23C18/125; C23C18/1275; C23C18/1295; C30; C30B; C30B29/00; C30B29/60; C30B29/68; C30B7/00; H01; H01C; H01C7/00; H01C7/10; H01C7/1013; H10B; H10B12/00; H10B12/30; H10B53/00; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10D1/684; H10D1/692; H10P14/66; H10P14/668; C04B2235/00; C04B2235/02; C04B2235/30; C04B2235/32; C04B2235/3201; C04B2235/3203; C04B2235/3205; C04B2235/3206; C04B2235/3208; C04B2235/3213; C04B2235/3217; C04B2235/3224; C04B2235/3227; C04B2235/3229; C04B2235/3231; C04B2235/3232; C04B2235/3234; C04B2235/3241; C04B2235/3243; C04B2235/3251; C04B2235/3262; C04B2235/3268; C04B2235/327; C04B2235/3272; C04B2235/3275; C04B2235/3279; C04B2235/3281; C04B2235/3284; C04B2235/3289; C04B2235/44; C04B2235/441; C04B2235/449; C04B2235/65; C04B2235/658; C04B2235/6583; C04B2235/6585; C04B2235/70; C04B2235/72; C04B2235/74; C04B2235/79; H10P14/63; H10P14/6326; H10P14/6342; H10P14/65; H10P14/6502; H10P14/6506
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
73 words
A non-stoichiometric metal oxide precursor solution for fabricating integrated circuit thin films, said precursor solution comprising: a stoichiometric portion including total A-site and total B-site metals in a 1:1 ratio capable of satisfying a formula; and excess B-site material added to said stoichiometric portion including B-site material in an amount ranging from 0.01 mol % to 100 mol % of the amount of total amount of B-site material required to satisfy said formula.
Claim 2
Dependent Claim
73 words
A non-stoichiometric metal oxide precursor solution for fabricating integrated circuit thin films, said precursor solution comprising: a stoichiometric portion including total A-site and total B-site metals in a 1:1 ratio capable of satisfying a formula; and excess B-site material added to said stoichiometric portion including B-site material in an amount ranging from 0.01 mol % to 100 mol % of the amount of total amount of B-site material required to satisfy said formula.
Claim 3
Dependent Claim
37 words
The precursor of claim 1 wherein said stoichiometric portion comprises barium, strontium, and titanium in amounts corresponding to a formula (Ba x Sr 1-x TiO 3 ), wherein x is a number ranging from zero to one.
Claim 4
Dependent Claim
26 words
The precursor of claim 2 wherein said excess B-site material comprises titanium in an amount greater than 0.1 mol % and less than 20 mol %.
Claim 5
Dependent Claim
24 words
The precursor of claim 1 wherein said excess B-site material comprises titanium in an amount ranging from 1 mol % to 3 mol %.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-11-24 | 2001-05-26 | 2001-11-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-11-24 | 2005-05-26 | 2005-11-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-11-24 | 2009-05-26 | 2009-11-25 | $7700.00 | Window Closed / Lapsed |