US5895938A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device using semiconductor BCN compounds
Assignee: Toshiba Corp
•
Filing: 1997-02-12
•
Granted: 1999-04-20
•
Expires: 2017-02-12
Abstract
Abstract Disclosed is a semiconductor device comprising a semiconductor BCN compound layer and a metallic BCN compound layer and/or an insulating BCN compound layer, wherein the semiconductor BCN compound layer and the metallic BCN compound layer and/or insulating BCN compound layer are stacked one upon the other.
Inventors
- 👤 Miyoko Watanabe
- 👤 Koichi Mizushima
- 👤 Satoshi Itoh
- 👤 Masao Mashita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 05:06
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/36; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H10D; H10D62/00; H10D62/80; H10F; H10F10/00; H10F10/10; H10F10/14; H10F10/18; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/227; H10F77/00; H10F77/10; H10F77/12; H10F77/20; H10F77/206; H10F77/211; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/547
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
62 words
A semiconductor device using a semiconductor BCN compound, comprising: a light-emitting layer made of a semiconductor BCN compound; and a p-type semiconductor BCN compound layer and an n-type semiconductor BCN compound layer positioned to have said light-emitting layer sandwiched therebetween, said p- and n-type semiconductor BCN compounds having a band gap greater than that of the BCN compound forming the light-emitting layer.
Claim 2
Dependent Claim
62 words
A semiconductor device using a semiconductor BCN compound, comprising: a light-emitting layer made of a semiconductor BCN compound; and a p-type semiconductor BCN compound layer and an n-type semiconductor BCN compound layer positioned to have said light-emitting layer sandwiched therebetween, said p- and n-type semiconductor BCN compounds having a band gap greater than that of the BCN compound forming the light-emitting layer.
Claim 3
Dependent Claim
22 words
The semiconductor device according to claim 1, wherein said semiconductor BCN compound constituting the light-emitting layer is made of BC 2 N.
Claim 4
Dependent Claim
27 words
The semiconductor device according to claim 1, wherein said semiconductor BCN compound constituting the layers, positioned to have said light-emitting layer sandwiched therebetween, are made of BCN.
Claim 5
Dependent Claim
81 words
A semiconductor device using a semiconductor BCN compound, comprising: a light-emitting layer made of a semiconductor BCN compound; cladding layers positioned to have said light-emitting layer sandwiched therebetween and made of a p-type semiconductor BCN compound and an n-type semiconductor BCN compound, respectively, said p- and n-type semiconductor BCN compounds having a band gap greater than that of the BCN compound forming the light-emitting layer, wherein resonating planes are formed on the edge surfaces of said light-emitting layer and cladding layers.
Claim 6
Dependent Claim
81 words
A semiconductor device using a semiconductor BCN compound, comprising: a light-emitting layer made of a semiconductor BCN compound; cladding layers positioned to have said light-emitting layer sandwiched therebetween and made of a p-type semiconductor BCN compound and an n-type semiconductor BCN compound, respectively, said p- and n-type semiconductor BCN compounds having a band gap greater than that of the BCN compound forming the light-emitting layer, wherein resonating planes are formed on the edge surfaces of said light-emitting layer and cladding layers.
Claim 7
Dependent Claim
22 words
The semiconductor device according to claim 4, wherein said semiconductor BCN compound constituting the light-emitting layer is made of BC 4 N.
Claim 8
Dependent Claim
22 words
The semiconductor device according to claim 4, wherein said semiconductor BCN compound constituting the cladding layers is made of BC 2 N.
Claim 9
Dependent Claim
18 words
The semiconductor device according to claim 4, wherein mirrors made of BN are formed on said resonating planes.
Claim 10
Dependent Claim
59 words
A semiconductor device using a semiconductor BCN compound, comprising: two semiconductor BCN compound layers forming a pn junction; and semiconductor BCN compound layers laminated on one of said layers forming the pn junction, wherein band gaps of said semiconductor BCN compounds are sequentially decreased from a surface of the semiconductor device toward an inner region of the semiconductor device.
Claim 11
Dependent Claim
59 words
A semiconductor device using a semiconductor BCN compound, comprising: two semiconductor BCN compound layers forming a pn junction; and semiconductor BCN compound layers laminated on one of said layers forming the pn junction, wherein band gaps of said semiconductor BCN compounds are sequentially decreased from a surface of the semiconductor device toward an inner region of the semiconductor device.
Claim 12
Dependent Claim
20 words
The semiconductor device according to claim 8, wherein an antireflection layer made of BN is formed on the surface thereof.
Claim 13
Dependent Claim
73 words
A semiconductor device using a semiconductor BCN compound, comprising: a semiconductor BCN compound layer; and a metallic BCN compound layer and/or an insulating BCN compound layer; wherein said semiconductor BCN compound layer, and said metallic BCN compound layer and/or insulating BCN compound layer are stacked on upon the other; wherein said semiconductor BCN conductor has a p-type conductivity; and wherein a p-type dopant is selected from the group consisting of S and Si.
Claim 14
Dependent Claim
73 words
A semiconductor device using a semiconductor BCN compound, comprising: a semiconductor BCN compound layer; and a metallic BCN compound layer and/or an insulating BCN compound layer; wherein said semiconductor BCN compound layer, and said metallic BCN compound layer and/or insulating BCN compound layer are stacked on upon the other; wherein said semiconductor BCN conductor has a p-type conductivity; and wherein a p-type dopant is selected from the group consisting of S and Si.
Claim 15
Dependent Claim
27 words
The semiconductor device according to claim 10, wherein a Schottky junction of the semiconductor BCN compound constituting a light-absorbing layer and the metallic BCN compound is formed.
Claim 16
Dependent Claim
41 words
The semiconductor device according to claim 11, wherein the semiconductor BCN compound constituting the light-absorbing layer is made of BC 2 N, and the metallic BCN compound is selected from the group consisting of C, BC 3 and C 5 N.
Claim 17
Dependent Claim
72 words
A semiconductor device using a semiconductor BCN compound, comprising: a semiconductor BCN compound layer; and a metallic BCN compound layer and/or an insulating BCN compound layer, wherein said semiconductor BCN compound layer, and said metallic BCN compound layer and/or insulating BCN compound layer are stacked on upon the other; wherein said semiconductor BCN conductor has an n-type conductivity; wherein an n-type dopant is selected from the group consisting of Zn and Be.
Claim 18
Dependent Claim
72 words
A semiconductor device using a semiconductor BCN compound, comprising: a semiconductor BCN compound layer; and a metallic BCN compound layer and/or an insulating BCN compound layer, wherein said semiconductor BCN compound layer, and said metallic BCN compound layer and/or insulating BCN compound layer are stacked on upon the other; wherein said semiconductor BCN conductor has an n-type conductivity; wherein an n-type dopant is selected from the group consisting of Zn and Be.
Claim 19
Dependent Claim
27 words
The semiconductor device according to claim 13, wherein a Schottky junction of the semiconductor BCN compound constituting a light-absorbing layer and the metallic BCN compound is formed.
Claim 20
Dependent Claim
41 words
The semiconductor device according to claim 14, wherein the semiconductor BCN compound constituting a light-absorbing layer is made of BC 2 N, and the metallic BCN compound is selected from the group consisting of C, BC 3 and C 5 N.
Claim 21
Dependent Claim
67 words
A semiconductor device using a semiconductor BCN compound, comprising: a semiconductor BCN compound layer; and a metallic BCN compound layer and/or an insulating BCN compound layer, wherein said semiconductor BCN compound layer, and said metallic BCN compound layer and/or insulating BCN compound layer are stacked on upon the other; and wherein a heterojunction consisting of semiconductor BCN compound layers differing from each other in composition is formed.
Claim 22
Dependent Claim
67 words
A semiconductor device using a semiconductor BCN compound, comprising: a semiconductor BCN compound layer; and a metallic BCN compound layer and/or an insulating BCN compound layer, wherein said semiconductor BCN compound layer, and said metallic BCN compound layer and/or insulating BCN compound layer are stacked on upon the other; and wherein a heterojunction consisting of semiconductor BCN compound layers differing from each other in composition is formed.
References Cited (Backward Citations)
US5747118A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-04-19 | 2002-10-19 | 2003-04-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-04-19 | 2006-10-19 | 2007-04-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-04-19 | 2010-10-19 | 2011-04-20 | $7700.00 | Window Closed / Lapsed |