US6100200A
Expired / Lapsed
US
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Sputtering process for the conformal deposition of a metallization or insulating layer
Assignee: Entegris Inc
•
Filing: 1998-12-21
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Granted: 2000-08-08
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Expires: 2018-12-21
Abstract
Abstract The present invention is a method related to the deposition of a metallization layer in a trench in a semiconductor substrate. The focus of the invention is to sequentially perform heated deposition and etch unit processes to provide a good conformal film of metal on the inner surfaces of a via or trench. The deposition and etch steps can also be performed simultaneously.
Inventors
- 👤 Peter C. Van Buskirk
- 👤 Michael W. Russell
- 👤 Daniel J. Vestyck
- 👤 Scott R. Summerfelt
- 👤 Theodore S. Moise
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:05
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; C; C23; C23C; C23C14/00; C23C14/04; C23C14/046; C23C14/22; C23C14/34; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/0698; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/44
Claims Analysis
Total Claims: 56
Claim 1
Independent Claim
79 words
A method for depositing a conformal thin film over a semiconductor substrate, the surface of said substrate containing three-dimensional structures, comprising the steps of: a. heating said substrate, b. depositing material to form a first film substantially covering horizontal surfaces on said substrate, c. etching said first film so as to re-sputter material from said horizontal surfaces onto vertical surfaces of said three-dimensional structures, d. repeating said depositing and etching steps to form a composite conformal thin film layer.
Claim 2
Independent Claim
79 words
A method for depositing a conformal thin film over a semiconductor substrate, the surface of said substrate containing three-dimensional structures, comprising the steps of: a. heating said substrate, b. depositing material to form a first film substantially covering horizontal surfaces on said substrate, c. etching said first film so as to re-sputter material from said horizontal surfaces onto vertical surfaces of said three-dimensional structures, d. repeating said depositing and etching steps to form a composite conformal thin film layer.
Claim 3
Dependent Claim
16 words
The method of claim 1 wherein said first film etch is comprised of a plasma etch.
Claim 4
Dependent Claim
14 words
The method of claim 2 wherein an initial etch step precedes the deposition step.
Claim 5
Dependent Claim
17 words
The method of claim 2 wherein the number of deposition and first film etch cycles is 2.
Claim 6
Dependent Claim
20 words
The method of claim 2 wherein the number of deposition and first film etch cycles is between 3 and 10.
Claim 7
Dependent Claim
22 words
The method of claim 2 wherein each first film etch step removes at least 25% of material deposited during previous deposition step.
Claim 8
Dependent Claim
16 words
The method of claim 2 wherein the deposition and etch cycle concludes with a deposition step.
Claim 9
Dependent Claim
21 words
The method of claim 2 wherein said first film is a metal film deposited by an ionized magnetron sputter deposition process.
Claim 10
Dependent Claim
19 words
The method of claim 2 wherein said first film is a metal film deposited by a reactive sputtering process.
Claim 11
Dependent Claim
13 words
The method of claim 2 wherein the deposition cycle utilizes a directional grating.
Claim 12
Dependent Claim
12 words
The method of claim 10 wherein the directional grating is a collimator.
Claim 13
Dependent Claim
22 words
The method of claim 2 wherein said first film is selected from the group consisting of an oxide, nitride or oxy-nitride film.
Claim 14
Dependent Claim
15 words
The method of claim 2 wherein said thin first film is an electrically conductive film.
Claim 15
Dependent Claim
23 words
The method of claim 13 wherein said conductive film is selected from the group consisting of a noble metal or noble metal oxide.
Claim 16
Dependent Claim
24 words
The method of claim 14 wherein said conductive film is selected from the group consisting of iridium, iridium oxide, ruthenium, ruthenium oxide, and platinum.
Claim 17
Dependent Claim
13 words
The method of claim 15 wherein the substrate temperature is between 300-600° C.
Claim 18
Dependent Claim
14 words
The method of claim 16 wherein the deposition power is less than 1 kW.
Claim 19
Independent Claim
80 words
A method for depositing a conformal thin film over a semiconductor substrate, the surface of said substrate containing three-dimensional structures, comprising the steps of: a. heating said substrate, b. depositing material to form a first film substantially covering horizontal surfaces on said substrate, c. plasma etching said first film so as to re-sputter material from said horizontal surfaces onto vertical surfaces of said three-dimensional structures, d. repeating said depositing and etching steps to form a composite conformal thin film layer.
Claim 20
Independent Claim
80 words
A method for depositing a conformal thin film over a semiconductor substrate, the surface of said substrate containing three-dimensional structures, comprising the steps of: a. heating said substrate, b. depositing material to form a first film substantially covering horizontal surfaces on said substrate, c. plasma etching said first film so as to re-sputter material from said horizontal surfaces onto vertical surfaces of said three-dimensional structures, d. repeating said depositing and etching steps to form a composite conformal thin film layer.
Claim 21
Dependent Claim
14 words
The method of claim 18 wherein an initial etch step precedes the deposition step.
Claim 22
Dependent Claim
16 words
The method of claim 19 wherein the number of deposition and plasma etch cycles is 2.
Claim 23
Dependent Claim
19 words
The method of claim 19 wherein the number of deposition and plasma etch cycles is between 3 and 10.
Claim 24
Dependent Claim
21 words
The method of claim 21 wherein each plasma etch step removes at least 25% of material deposited during previous deposition step.
Claim 25
Dependent Claim
16 words
The method of claim 22 wherein the deposition and etch cycle concludes with a deposition step.
Claim 26
Dependent Claim
23 words
The method of claim 23 wherein said thin first film is selected from the group consisting of an oxide, nitride or oxy-nitride film.
Claim 27
Dependent Claim
15 words
The method of claim 23 wherein said thin first film is an electrically conductive film.
Claim 28
Dependent Claim
18 words
The method of claim 25 wherein said conductive film is deposited by an ionized magnetron sputter deposition process.
Claim 29
Dependent Claim
16 words
The method of claim 25 wherein said conductive film is deposited by a reactive sputtering process.
Claim 30
Dependent Claim
17 words
The method of claim 25 wherein the conductive film is deposited by an ion beam sputtering process.
Claim 31
Independent Claim
17 words
The method of claims 26, 27 and 28 wherein the sputter deposition process utilizes a directional grating.
Claim 32
Dependent Claim
13 words
The method of claim 29 in which said directional grating is a collimator.
Claim 33
Dependent Claim
23 words
The method of claim 29 wherein said conductive film is selected from the group consisting of a noble metal or noble metal oxide.
Claim 34
Dependent Claim
25 words
The method of claim 31 wherein said noble metal film is selected from a group consisting of iridium, iridium oxide, ruthenium, ruthenium oxide, and platinum.
Claim 35
Dependent Claim
13 words
The method of claim 32 wherein the substrate temperature is between 300-600° C.
Claim 36
Dependent Claim
14 words
The method of claim 33 wherein the sputter power is less than 1 kW.
Claim 37
Independent Claim
89 words
A method for depositing a conformal thin film over a semiconductor substrate, the surface of said substrate containing three-dimensional structures, comprising the steps of: a. heating said substrate, b. etching said substrate in an initial plasma etch, c. simultaneously depositing and plasma etching a noble metal to form a conformal film substantially covering horizontal and vertical surfaces on three-dimensional structures, said noble metal deposited by an ionized magnetron sputter deposition process where the substrate temperature is at least 400° C. and the deposition power is less than 1 kW.
Claim 38
Independent Claim
89 words
A method for depositing a conformal thin film over a semiconductor substrate, the surface of said substrate containing three-dimensional structures, comprising the steps of: a. heating said substrate, b. etching said substrate in an initial plasma etch, c. simultaneously depositing and plasma etching a noble metal to form a conformal film substantially covering horizontal and vertical surfaces on three-dimensional structures, said noble metal deposited by an ionized magnetron sputter deposition process where the substrate temperature is at least 400° C. and the deposition power is less than 1 kW.
Claim 39
Dependent Claim
21 words
The method of claim 35 wherein said noble metal film is selected from the group consisting of iridium, ruthenium, and platinum.
Claim 40
Dependent Claim
19 words
The method of claim 35 wherein the sputtering and plasma etching parameters are systematically varied throughout the deposition process.
Claim 41
Independent Claim
89 words
A method for depositing a conformal thin film over a semiconductor substrate, the surface of said substrate containing three-dimensional structures, comprising the steps of: a. heating said substrate, b. etching said substrate in an initial plasma etch, c. simultaneously depositing and plasma etching a noble-metal oxide to form a conformal film substantially covering horizontal and vertical surfaces on three-dimensional structures, said noble metal deposited by an ionized magnetron sputter deposition process where the substrate temperature is at least 400° C. and the deposition power is less than 1 kW.
Claim 42
Independent Claim
89 words
A method for depositing a conformal thin film over a semiconductor substrate, the surface of said substrate containing three-dimensional structures, comprising the steps of: a. heating said substrate, b. etching said substrate in an initial plasma etch, c. simultaneously depositing and plasma etching a noble-metal oxide to form a conformal film substantially covering horizontal and vertical surfaces on three-dimensional structures, said noble metal deposited by an ionized magnetron sputter deposition process where the substrate temperature is at least 400° C. and the deposition power is less than 1 kW.
Claim 43
Dependent Claim
23 words
The method of claim 38 wherein said noble metal oxide film is selected from the group consisting of iridium oxide and ruthenium oxide.
Claim 44
Dependent Claim
19 words
The method of claim 38 wherein the sputtering and plasma etching parameters are systematically varied throughout the deposition process.
Claim 45
Independent Claim
102 words
A method for depositing a conformal thin film over a semiconductor substrate, the surface of said substrate containing three-dimensional structures, comprising the steps of: a. heating said substrate, b. depositing a conductive barrier layer on said substrate said conductive barrier layer suitable to withstand oxidation and prevent oxidation of said substrate, c. depositing material to form a second film substantially covering horizontal surfaces on said substrate, d. etching said second film so as to re-sputter material from said horizontal surfaces onto vertical surfaces of said three-dimensional structures, e. repeating said depositing and etching steps to form a composite conformal thin film layer.
Claim 46
Independent Claim
102 words
A method for depositing a conformal thin film over a semiconductor substrate, the surface of said substrate containing three-dimensional structures, comprising the steps of: a. heating said substrate, b. depositing a conductive barrier layer on said substrate said conductive barrier layer suitable to withstand oxidation and prevent oxidation of said substrate, c. depositing material to form a second film substantially covering horizontal surfaces on said substrate, d. etching said second film so as to re-sputter material from said horizontal surfaces onto vertical surfaces of said three-dimensional structures, e. repeating said depositing and etching steps to form a composite conformal thin film layer.
Claim 47
Dependent Claim
16 words
The method of claim 41 wherein said second film etch is comprised of a plasma etch.
Claim 48
Dependent Claim
14 words
The method of claim 42 wherein an initial etch step precedes the deposition step.
Claim 49
Dependent Claim
30 words
The method of claim 42 wherein said conductive barrier layer is selected from the group consisting of TiN, TiSiN, TiAlN, IrO 2 , SiC, PdSiN, metal suicides, or metal carbides.
Claim 50
Dependent Claim
14 words
The method of claim 42 wherein said thin second film is a conductive film.
Claim 51
Dependent Claim
23 words
The method of claim 45 wherein said conductive film is selected from the group consisting of a noble metal or noble metal oxide.
Claim 52
Dependent Claim
28 words
The method of claim 46 wherein said noble metal or noble metal oxide are selected from the group consisting of iridium, iridium oxide, ruthenium, ruthenium oxide, and platinum.
Claim 53
Independent Claim
104 words
A method for depositing a conformal thin film over a semiconductor substrate, the surface of said substrate containing three-dimensional structures, comprising the steps of: a. heating said substrate, b. depositing material to form a first film substantially covering horizontal surfaces on said substrate, said first film capable of functioning as an electrode and as a conductive barrier layer suitable to withstand oxidation and prevent diffusion of said substrate, c. etching said first film so as to re-sputter material from said horizontal surfaces onto vertical surfaces of said three-dimensional structures, d. repeating said depositing and etching steps to form a composite conformal thin film layer.
Claim 54
Independent Claim
104 words
A method for depositing a conformal thin film over a semiconductor substrate, the surface of said substrate containing three-dimensional structures, comprising the steps of: a. heating said substrate, b. depositing material to form a first film substantially covering horizontal surfaces on said substrate, said first film capable of functioning as an electrode and as a conductive barrier layer suitable to withstand oxidation and prevent diffusion of said substrate, c. etching said first film so as to re-sputter material from said horizontal surfaces onto vertical surfaces of said three-dimensional structures, d. repeating said depositing and etching steps to form a composite conformal thin film layer.
Claim 55
Dependent Claim
16 words
The method of claim 48 wherein said first film etch is comprised of a plasma etch.
Claim 56
Dependent Claim
14 words
The method of claim 49 wherein an initial etch step precedes the deposition step.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-08-08 | 2004-02-07 | 2004-08-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-08-08 | 2008-02-07 | 2008-08-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-08-08 | 2012-02-07 | 2012-08-08 | $7700.00 | Window Closed / Lapsed |