US5834803A
Expired / Lapsed
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Oriented ferroelectric thin film element and process for preparing the same
Assignee: EpiPhotonics Corp
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Filing: 1995-11-06
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Granted: 1998-11-10
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Expires: 2015-11-06
Abstract
Abstract An oriented ferroelectric thin film element, which comprises a single-crystal substrate having thereon (a) a first epitaxial or oriented ferroelectric thin film prepared by a gas phase growth method and (b) a second epitaxial or oriented ferroelectric thin film prepared by application of a coating solution of an organic metal compound to the first ferroelectric thin film followed by heating the coated material. The oriented ferroelectric thin film element has a smooth surface and is useful as an optical guide element, light modulation element, etc. The second ferroelectric thin film can be formed by repeating the process of application of a coating solution of an organic metal compound followed by heating the coated material several times. The present invention also discloses a process for preparing the oriented ferroelectric thin film element.
Inventors
- 👤 Keiichi Nashimoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 19:36
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/03; G02F1/05; C; C23; C23C; C23C14/00; C23C14/06; C23C14/08; C23C14/088; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/409; C30; C30B; C30B23/00; C30B23/02; C30B29/00; C30B29/10; C30B29/16; C30B29/22; C30B29/30; G02B; G02B6/00; G02B6/10; G02B6/12; G02B6/13; G02B6/131; G02B6/132; Y; Y10; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12528
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
112 words
An oriented ferroelectric thin film element, which comprises: a single-crystal substrate; a first epitaxial or oriented ferroelectric thin film prepared by a gas phase growth method on said substrate, said first ferroelectric thin film having a thickness of 50 Å or more and having a first surface disposed away from said substrate; and a second epitaxial or oriented ferroelectric thin film prepared by application of a coating solution of an organic metal compound to said first ferroelectric thin film followed by heating the coated material said second ferroelectric thin film having a second surface disposed away from said first ferroelectric thin film, wherein said second surface is smoother than said first surface.
Claim 2
Dependent Claim
112 words
An oriented ferroelectric thin film element, which comprises: a single-crystal substrate; a first epitaxial or oriented ferroelectric thin film prepared by a gas phase growth method on said substrate, said first ferroelectric thin film having a thickness of 50 Å or more and having a first surface disposed away from said substrate; and a second epitaxial or oriented ferroelectric thin film prepared by application of a coating solution of an organic metal compound to said first ferroelectric thin film followed by heating the coated material said second ferroelectric thin film having a second surface disposed away from said first ferroelectric thin film, wherein said second surface is smoother than said first surface.
Claim 3
Dependent Claim
20 words
The oriented ferroelectric thin film element according to claim 1, wherein said single-crystal substrate comprises a single crystal of oxide.
Claim 4
Dependent Claim
17 words
The oriented ferroelectric thin film element according to claim 1, wherein said single-crystal substrate comprises a semiconductor.
Claim 5
Dependent Claim
23 words
The oriented ferroelectric thin film element according to claim 1, wherein said single-crystal substrate comprises a semiconductor having thereon an epitaxial buffer layer.
Claim 6
Dependent Claim
32 words
The oriented ferroelectric thin film element according to claim 1, wherein said gas phase growth method is electron-beam deposition method, Rf-magnetron sputtering method, laser ablation method or organic metal chemical vapor deposition.
Claim 7
Dependent Claim
27 words
The oriented ferroelectric thin film element according to claim 1, wherein said organic metal compound is selected from the group consisting of metal alkoxides and metallic salts.
Claim 8
Dependent Claim
44 words
The oriented ferroelectric thin film element according to claim 1, wherein said application of a coating solution of an organic metal compound followed by heating the coated material is repeated a plurality of times to form a second epitaxial or oriented ferroelectric thin film.
Claim 9
Dependent Claim
117 words
A process for preparing an oriented ferroelectric thin film, which comprises: forming a first epitaxial or oriented ferroelectric thin film on a single-crystal substrate by a gas phase growth method said first ferroelectric thin film having a thickness of 50 Å or more and having a first surface disposed away from said substrate; applying a coating solution of an organic metal compound to said first ferroelectric thin film; and then heating the coated material to form a second epitaxial or oriented ferroelectric thin film on said first ferroelectric thin film, said second ferroelectric thin film having a second surface disposed away from said first ferroelectric thin film; wherein said second surface is smoother than said first surface.
Claim 10
Dependent Claim
117 words
A process for preparing an oriented ferroelectric thin film, which comprises: forming a first epitaxial or oriented ferroelectric thin film on a single-crystal substrate by a gas phase growth method said first ferroelectric thin film having a thickness of 50 Å or more and having a first surface disposed away from said substrate; applying a coating solution of an organic metal compound to said first ferroelectric thin film; and then heating the coated material to form a second epitaxial or oriented ferroelectric thin film on said first ferroelectric thin film, said second ferroelectric thin film having a second surface disposed away from said first ferroelectric thin film; wherein said second surface is smoother than said first surface.
Claim 11
Dependent Claim
23 words
The process for preparing an oriented ferroelectric thin film according to claim 8, wherein said single-crystal substrate comprises a single crystal of oxide.
Claim 12
Dependent Claim
20 words
The process for preparing an oriented ferroelectric thin film according to claim 8, wherein said single-crystal substrate comprises a semiconductor.
Claim 13
Dependent Claim
26 words
The process for preparing an oriented ferroelectric thin film according to claim 8, wherein said single-crystal substrate comprises a semiconductor having thereon an epitaxial buffer layer.
Claim 14
Dependent Claim
35 words
The process for preparing an oriented ferroelectric thin film according to claim 8, wherein said gas phase growth method is electron-beam deposition method, Rf-magnetron sputtering method, laser ablation method or organic metal chemical vapor deposition.
Claim 15
Dependent Claim
30 words
The process for preparing an oriented ferroelectric thin film according to claim 8, wherein said organic metal compound is selected from the group consisting of metal alkoxides and metallic salts.
Claim 16
Dependent Claim
47 words
The process for preparing an oriented ferroelectric thin film according to claim 8, wherein said application of a coating solution of an organic metal compound followed by heating the coated material is repeated a plurality of times to form a second epitaxial or oriented ferroelectric thin film.
Claim 17
Dependent Claim
90 words
An oriented ferroelectric thin film element, comprising: a single-crystal substrate; a first epitaxial or oriented ferroelectric thin film on said substrate, said first ferroelectric thin film having a thickness of 50 Å or more and having a first surface disposed away from said substrate; and a second epitaxial or oriented ferroelectric thin film on said first surface of said first ferroelectric thin film, said second ferroelectric thin film having a second surface disposed away from said first ferroelectric thin film, wherein said second surface is smoother than said first surface.
Claim 18
Dependent Claim
90 words
An oriented ferroelectric thin film element, comprising: a single-crystal substrate; a first epitaxial or oriented ferroelectric thin film on said substrate, said first ferroelectric thin film having a thickness of 50 Å or more and having a first surface disposed away from said substrate; and a second epitaxial or oriented ferroelectric thin film on said first surface of said first ferroelectric thin film, said second ferroelectric thin film having a second surface disposed away from said first ferroelectric thin film, wherein said second surface is smoother than said first surface.
Claim 19
Dependent Claim
37 words
The oriented ferroelectric thin film element according to claim 1, wherein optical guide loss measurements, using the He--Ne laser light, of said ferroelectric thin film element show TE 0 mode attenuation of not more than 10 dB/cm.
Claim 20
Dependent Claim
37 words
The oriented ferroelectric thin film element according to claim 15, wherein optical guide loss measurements, using the He--Ne laser light, of said ferroelectric thin film element show TE 0 mode attenuation of not more than 10 dB/cm.
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