US6159825A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Controlled cleavage thin film separation process using a reusable substrate
Assignee: Silicon Genesis Corp
•
Filing: 1998-02-19
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Granted: 2000-12-12
•
Expires: 2018-02-19
Abstract
Abstract A technique for forming films of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define donor substrate material (12) above the selected depth. Energy is provided to a selected region of the substrate to cleave a thin film of material from the donor substrate. Particles are introduced again into the donor substrate underneath a fresh surface of the donor substrate. A second thin film of material is then cleaved from the donor substrate.
Inventors
- 👤 Francois J. Henley
- 👤 Nathan W. Cheung
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 00:56
CPC Classifications
H; H10; H10P; H10P10/00; H10P10/12; H10P10/128; B; B81; B81C; B81C1/00; B81C1/00349; B81C1/0038; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2907; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10P30/208; H10P30/225; H10P32/00; H10P32/10; H10P32/12; H10P32/1204; H10P52/00; H10P54/00; H10P54/50; H10P54/52; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H10P90/1916; H10P95/00; H10P95/11; H10P95/112; H10W; H10W10/00; H10W10/10; H10W10/181; B81C2201/00; B81C2201/01; B81C2201/0174; B81C2201/0191; B81C2201/0192; Y; Y10; Y10S; Y10S117/00; Y10S117/915; Y10S156/00; Y10S156/918; Y10S156/93; Y10S438/00; Y10S438/974; Y10S438/977; Y10T; Y10T156/00; Y10T156/11; Y10T156/1153; Y10T156/1158; Y10T156/19; Y10T428/00; Y10T428/21; Y10T428/24; Y10T428/24802; Y10T428/24893; Y10T428/249921; Y10T428/249953; Y10T428/249955; Y10T428/249956
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
189 words
A process for forming films of material from a substrate, said process comprising steps of: introducing first particles through a surface of the substrate to a first selected depth underneath said surface, said first particles being a first concentration at said first selected depth to define a first layer of substrate material to be removed above said first selected depth and to define a first remaining portion of substrate material below said first selected depth; freeing said first layer of substrate material from the substrate to form a cleaved surface on said substrate by applying energy to a selected region of said substrate thereby cleaving said first laver from said substrate in a controlled fashion; introducing second particles through said cleaved surface of said substrate to a second selected depth underneath said cleaved surface, said second particles being at a second concentration at said second selected depth to define a second layer of substrate material to be removed above said second selected depth and to define a second remaining portion of substrate material below said second selected depth; and freeing said second layer of substrate material from the substrate.
Claim 2
Dependent Claim
189 words
A process for forming films of material from a substrate, said process comprising steps of: introducing first particles through a surface of the substrate to a first selected depth underneath said surface, said first particles being a first concentration at said first selected depth to define a first layer of substrate material to be removed above said first selected depth and to define a first remaining portion of substrate material below said first selected depth; freeing said first layer of substrate material from the substrate to form a cleaved surface on said substrate by applying energy to a selected region of said substrate thereby cleaving said first laver from said substrate in a controlled fashion; introducing second particles through said cleaved surface of said substrate to a second selected depth underneath said cleaved surface, said second particles being at a second concentration at said second selected depth to define a second layer of substrate material to be removed above said second selected depth and to define a second remaining portion of substrate material below said second selected depth; and freeing said second layer of substrate material from the substrate.
Claim 3
Dependent Claim
26 words
The process of claim 1 further comprising a step, prior to said step of freeing said first layer, of attaching said surface to a first stiffener.
Claim 4
Dependent Claim
26 words
The process of claim 2 further comprising a step, prior to said step of freeing said second layer, of attaching said surface to a second stiffener.
Claim 5
Dependent Claim
23 words
The process of claim 1 further comprising steps, after said step of freeing said second layer, of implanting particles and freeing additional layers.
Claim 6
Dependent Claim
22 words
The process of claim 1 further comprising a step of preparing said cleaved surface prior to said step of introducing second particles.
Claim 7
Dependent Claim
13 words
The process of claim 5 wherein said cleaved surface is prepared by polishing.
Claim 8
Dependent Claim
13 words
The process of claim 6 wherein said polishing comprises a chemical-mechanical polishing process.
Claim 9
Dependent Claim
20 words
The process of claim 5 wherein said cleaved surface is prepared by forming a planarized layer on said cleaved surface.
Claim 10
Dependent Claim
12 words
The process of claim 8 wherein said planarized layer comprises silicon oxide.
Claim 11
Dependent Claim
13 words
The process of claim 5 wherein said cleaved surface is prepared by cleaning.
Claim 12
Dependent Claim
11 words
The process of claim 1 wherein said substrate comprises single-crystal silicon.
Claim 13
Dependent Claim
20 words
The process of claim 11 wherein said substrate has a major crystallographic plane parallel to said surface of said substrate.
Claim 14
Dependent Claim
14 words
The process of claim 12 wherein said major crystallographic plane is a {100} plane.
Claim 15
Dependent Claim
14 words
The process of claim 12 wherein said major crystallographic plane is a {110} plane.
Claim 16
Dependent Claim
14 words
The process of claim 12 wherein said major crystallographic plane is a {111} plane.
Claim 17
Dependent Claim
196 words
A process for forming films of material from a single-crystal silicon substrate, said process comprising steps of: introducing first hydrogen ions through a surface of the substrate to a first selected depth underneath said surface, said first hydrogen ions being at a first concentration at said first selected depth to define a first layer of substrate material to be removed above said first selected depth and to define a first remaining portion of substrate material below said first selected depth; freeing said first layer of substrate material from the substrate to form a cleaved surface on said substrate by applying energy to a selected region of said substrate thereby cleaving said first layer from said substrate in a controlled fashion; preparing the cleaved surface; introducing hydrogen ions through said planarized layer to a second selected depth underneath said cleaved surface, said second hydrogen ions being at a second concentration at said second selected depth to define a second layer of substrate material to be removed above said second selected depth and to define a second remaining portion of substrate material below said second selected depth; and freeing said second layer of substrate material from the substrate.
Claim 18
Dependent Claim
196 words
A process for forming films of material from a single-crystal silicon substrate, said process comprising steps of: introducing first hydrogen ions through a surface of the substrate to a first selected depth underneath said surface, said first hydrogen ions being at a first concentration at said first selected depth to define a first layer of substrate material to be removed above said first selected depth and to define a first remaining portion of substrate material below said first selected depth; freeing said first layer of substrate material from the substrate to form a cleaved surface on said substrate by applying energy to a selected region of said substrate thereby cleaving said first layer from said substrate in a controlled fashion; preparing the cleaved surface; introducing hydrogen ions through said planarized layer to a second selected depth underneath said cleaved surface, said second hydrogen ions being at a second concentration at said second selected depth to define a second layer of substrate material to be removed above said second selected depth and to define a second remaining portion of substrate material below said second selected depth; and freeing said second layer of substrate material from the substrate.
Claim 19
Dependent Claim
25 words
The process of claim 16 further comprising a step, prior to said step of freeing said first layer, of attaching said surface to a stiffener.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-12-12 | 2004-06-12 | 2004-12-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-12-12 | 2008-06-12 | 2008-12-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-12-12 | 2012-06-12 | 2012-12-12 | $7700.00 | Window Closed / Lapsed |