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US6147375A
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Active matrix display device
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1998-09-11
•
Granted: 2000-11-14
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Expires: 2018-09-11
Abstract
Abstract A wiring formed on a substrate is oxidized and the oxide is used as a mask for forming source and drain impurity regions of a transistor, or as a material for insulating wirings from each other, or as a dielectric of a capacitor. The thickness of the oxide is determined depending on the purpose of the oxide. In a transistor adapted to be used in an active-matrix liquid-crystal display, the channel length, the distance between the source region and the drain region, is made larger than the length of the gate electrode taken in the longitudinal direction of the channel. Offset regions are formed in the channel region on the sides of the source and drain regions. No or very weak electric fields are applied to these offset regions from the gate electrode.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Akira Mase
- 👤 Masaaki Hiroki
- 👤 Yasuhiko Takemura
- 👤 Hongyong Zhang
- 👤 Hideki Uochi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 17:36
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/60; H10D30/67; H10D30/6704; H10D30/6713; H10D30/6729; H10D30/6737; H10D30/6739; H10D86/00; H10D86/40; H10D86/441; H10D86/60; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/13624; G02F1/136245; G09; G09G; G09G2300/00; G09G2300/08; G09G2300/0809; G09G2300/0823; Y; Y10; Y10S; Y10S148/00; Y10S148/161; Y10S148/163
Claims Analysis
Total Claims: 54
Claim 1
Independent Claim
136 words
An active matrix display device comprising: a substrate having an insulating surface; an active matrix circuit over said substrate, said active matrix circuit comprising: at least one thin film transistor having source and drain regions and a channel region therebetween in a semiconductor film, and a gate electrode adjacent to said channel region with a gate insulating film interposed therebetween; a pixel electrode formed over said substrate and electrically connected to one of said source and drain regions; a capacitor formed between a wiring and a portion of said pixel electrode with an oxide film interposed therebetween, said oxide film comprising an oxidized surface of said wiring; and a CMOS circuit for driving said active matrix circuit formed over said substrate, said CMOS circuit comprising at least a pair of N-channel and P-channel thin film transistors.
Claim 2
Dependent Claim
136 words
An active matrix display device comprising: a substrate having an insulating surface; an active matrix circuit over said substrate, said active matrix circuit comprising: at least one thin film transistor having source and drain regions and a channel region therebetween in a semiconductor film, and a gate electrode adjacent to said channel region with a gate insulating film interposed therebetween; a pixel electrode formed over said substrate and electrically connected to one of said source and drain regions; a capacitor formed between a wiring and a portion of said pixel electrode with an oxide film interposed therebetween, said oxide film comprising an oxidized surface of said wiring; and a CMOS circuit for driving said active matrix circuit formed over said substrate, said CMOS circuit comprising at least a pair of N-channel and P-channel thin film transistors.
Claim 3
Dependent Claim
47 words
An active matrix display device according to claim 1 wherein at least one of said wiring and said gate electrode comprises a material selected from the group consisting of silicon, aluminum, tantalum, titanium, tungsten, molybdenum, an alloy thereof, tantalum nitride, titanium nitride, tungsten nitride and molybdenum nitride.
Claim 4
Dependent Claim
17 words
An active matrix circuit according to claim 1 wherein said oxide film is formed by anodic oxidation.
Claim 5
Dependent Claim
151 words
An active matrix display device comprising: a substrate having an insulting surface; an active matrix circuit over said substrate, said matrix circuit comprising: at least one thin film transistor having source and drain regions and a channel region therebetween in a semiconductor film, and a gate electrode adjacent to said channel region with a gate insulting film interposed therebetween; a pixel electrode formed over said substrate and electrically connected to one of said source and drain regions; a capacitor formed between a wiring and a portion of said pixel electrode with an oxide film interposed therebetween, said oxide film comprising an oxidized surface of said wiring; and a peripheral circuit of a signal output utilized for a driving circuit of said active matrix display device, said peripheral circuit comprising at least a first thin film transistor for controlling strong electric current and a second thin film transistor for a logic circuit.
Claim 6
Dependent Claim
151 words
An active matrix display device comprising: a substrate having an insulting surface; an active matrix circuit over said substrate, said matrix circuit comprising: at least one thin film transistor having source and drain regions and a channel region therebetween in a semiconductor film, and a gate electrode adjacent to said channel region with a gate insulting film interposed therebetween; a pixel electrode formed over said substrate and electrically connected to one of said source and drain regions; a capacitor formed between a wiring and a portion of said pixel electrode with an oxide film interposed therebetween, said oxide film comprising an oxidized surface of said wiring; and a peripheral circuit of a signal output utilized for a driving circuit of said active matrix display device, said peripheral circuit comprising at least a first thin film transistor for controlling strong electric current and a second thin film transistor for a logic circuit.
Claim 7
Dependent Claim
47 words
An active matrix display device according to claim 4 wherein at least one of said wiring and said gate electrode comprises a material selected from the group consisting of silicon, aluminum, tantalum, titanium, tungsten, molybdenum, an alloy thereof, tantalum nitride, titanium nitride, tungsten nitride and molybdenum nitride.
Claim 8
Dependent Claim
17 words
An active matrix circuit according to claim 4 wherein said oxide film is formed by anodic oxidation.
Claim 9
Dependent Claim
135 words
An active matrix display device comprising: a substrate having an insulating surface; an active matrix circuit over said substrate, said active matrix circuit comprising: at least one thin film transistor having source and drain regions and a channel region therebetween in a semiconductor film, and a gate electrode over said channel region with a gate insulating film interposed therebetween; a pixel electrode formed over said substrate and electrically connected to one of said source and drain regions; a capacitor formed between a wiring and a portion of said pixel electrode with an oxide film interposed therebetween, said oxide film comprising an oxidized surface of said wiring; and a CMOS circuit for driving said active matrix circuit formed over said substrate, said CMOS circuit comprising at least a pair of N-channel and P-channel thin film transistors.
Claim 10
Dependent Claim
135 words
An active matrix display device comprising: a substrate having an insulating surface; an active matrix circuit over said substrate, said active matrix circuit comprising: at least one thin film transistor having source and drain regions and a channel region therebetween in a semiconductor film, and a gate electrode over said channel region with a gate insulating film interposed therebetween; a pixel electrode formed over said substrate and electrically connected to one of said source and drain regions; a capacitor formed between a wiring and a portion of said pixel electrode with an oxide film interposed therebetween, said oxide film comprising an oxidized surface of said wiring; and a CMOS circuit for driving said active matrix circuit formed over said substrate, said CMOS circuit comprising at least a pair of N-channel and P-channel thin film transistors.
Claim 11
Dependent Claim
47 words
An active matrix display device according to claim 7 wherein at least one of said wiring and said gate electrode comprises a material selected from the group consisting of silicon, aluminum, tantalum, titanium, tungsten, molybdenum, an alloy thereof, tantalum nitride, titanium nitride, tungsten nitride and molybdenum nitride.
Claim 12
Dependent Claim
17 words
An active matrix circuit according to claim 7 wherein said oxide film is formed by anodic oxidation.
Claim 13
Dependent Claim
151 words
An active matrix display device comprising: a substrate having an insulating surface; an active matrix circuit over said substrate, said active matrix circuit comprising: at least one thin film transistor having source and drain regions and a channel region therebetween in a semiconductor film, and a gate electrode over said channel region with a gate insulating film interposed therebetween; a pixel electrode formed over said substrate and electrically connected to one of said source and drain regions; a capacitor formed between a wiring and a portion of said pixel electrode with an oxide film interposed therebetween, said oxide film comprising an oxidized surface of said wiring; and a peripheral circuit of a signal output utilized for a driving circuit of said active matrix display device, said peripheral circuit comprising at least a first thin film transistor for controlling strong electric current and a second thin film transistor for a logic circuit.
Claim 14
Dependent Claim
151 words
An active matrix display device comprising: a substrate having an insulating surface; an active matrix circuit over said substrate, said active matrix circuit comprising: at least one thin film transistor having source and drain regions and a channel region therebetween in a semiconductor film, and a gate electrode over said channel region with a gate insulating film interposed therebetween; a pixel electrode formed over said substrate and electrically connected to one of said source and drain regions; a capacitor formed between a wiring and a portion of said pixel electrode with an oxide film interposed therebetween, said oxide film comprising an oxidized surface of said wiring; and a peripheral circuit of a signal output utilized for a driving circuit of said active matrix display device, said peripheral circuit comprising at least a first thin film transistor for controlling strong electric current and a second thin film transistor for a logic circuit.
Claim 15
Dependent Claim
47 words
An active matrix display device according to claim 10 wherein at least one of said wiring and said gate electrode comprises a material selected from the group consisting of silicon, aluminum, tantalum, titanium, tungsten, molybdenum, an alloy thereof, tantalum nitride, titanium nitride, tungsten nitride and molybdenum nitride.
Claim 16
Dependent Claim
17 words
An active matrix circuit according to claim 10 wherein said oxide film is formed by anodic oxidation.
Claim 17
Dependent Claim
141 words
An active matrix display device comprising: a substrate having an insulating surface; an active matrix circuit over said substrate, said active matrix circuit comprising: at least one thin film transistor having source and drain regions and a channel region therebetween in a semiconductor film comprising crystalline silicon, and a gate electrode adjacent to said channel region with a gate insulating film interposed therebetween; a transparent conductive film formed over said substrate and electrically connected to one of said source and drain regions; a capacitor formed between a wiring and a portion of said transparent conductive film with an oxide film interposed therebetween, said oxide film comprising an oxidized surface of said wiring; and a CMOS circuit for driving said active matrix circuit formed over said substrate, said CMOS circuit comprising at least a pair of N-channel and P-channel thin film transistors.
Claim 18
Dependent Claim
141 words
An active matrix display device comprising: a substrate having an insulating surface; an active matrix circuit over said substrate, said active matrix circuit comprising: at least one thin film transistor having source and drain regions and a channel region therebetween in a semiconductor film comprising crystalline silicon, and a gate electrode adjacent to said channel region with a gate insulating film interposed therebetween; a transparent conductive film formed over said substrate and electrically connected to one of said source and drain regions; a capacitor formed between a wiring and a portion of said transparent conductive film with an oxide film interposed therebetween, said oxide film comprising an oxidized surface of said wiring; and a CMOS circuit for driving said active matrix circuit formed over said substrate, said CMOS circuit comprising at least a pair of N-channel and P-channel thin film transistors.
Claim 19
Dependent Claim
47 words
An active matrix display device according to claim 13 wherein at least one of said wiring and said gate electrode comprises a material selected from the group consisting of silicon, aluminum, tantalum, titanium, tungsten, molybdenum, an alloy thereof, tantalum nitride, titanium nitride, tungsten nitride and molybdenum nitride.
Claim 20
Dependent Claim
17 words
an active matrix circuit according to claim 13 wherein said oxide film is formed by anodic oxidation.
Claim 21
Dependent Claim
157 words
An active matrix display device comprising: a substrate having an insulating surface; an active matrix circuit over said substrate, said active matrix circuit comprising: at least one thin film transistor having source and drain regions and a channel region therebetween in a semiconductor film comprising crystalline silicon, and a gate electrode adjacent to said channel region with a gate insulating film interposed therebetween; a transparent conductive film formed over said substrate and electrically connected to one of said source and drain regions; a capacitor formed between a wiring and a portion of said transparent conductive film with an oxide film interposed therebetween, said oxide film comprising an oxidized surface of said wiring; and a peripheral circuit of a signal output utilized for a driving circuit fo said active matrix display device, said peripheral circuit comprising at least a first thin film transistor for controlling strong electric current and a second thin film transistor for a logic circuit.
Claim 22
Dependent Claim
157 words
An active matrix display device comprising: a substrate having an insulating surface; an active matrix circuit over said substrate, said active matrix circuit comprising: at least one thin film transistor having source and drain regions and a channel region therebetween in a semiconductor film comprising crystalline silicon, and a gate electrode adjacent to said channel region with a gate insulating film interposed therebetween; a transparent conductive film formed over said substrate and electrically connected to one of said source and drain regions; a capacitor formed between a wiring and a portion of said transparent conductive film with an oxide film interposed therebetween, said oxide film comprising an oxidized surface of said wiring; and a peripheral circuit of a signal output utilized for a driving circuit fo said active matrix display device, said peripheral circuit comprising at least a first thin film transistor for controlling strong electric current and a second thin film transistor for a logic circuit.
Claim 23
Dependent Claim
47 words
An active matrix display device according to claim 16 wherein at least one of said wiring and said gate electrode comprises a material selected from the group consisting of silicon, aluminum, tantalum, titanium, tungsten, molybdenum, an alloy thereof, tantalum nitride, titanium nitride, tungsten nitride and molybdenum nitride.
Claim 24
Dependent Claim
17 words
An active matrix circuit according to claim 16 wherein said oxide film is formed by anodic oxidation.
Claim 25
Dependent Claim
138 words
An active matrix display device comprising: a substrate having an insulating surface; an active matrix circuit over said substrate, said active matrix circuit comprising: at least one thin film transistor having source and drain regions and a channel region therebetween in a semiconductor film, and a gate electrode adjacent to said channel region with a gate insulating film interposed therebetween; a pixel electrode formed over said substrate and electrically connected to one of said source and drain regions; a capacitor formed between a wiring and a portion of said pixel electrode with an anodic oxide film interposed therebetween, said anodic oxide film comprising an oxidized surface of said wiring; and a CMOS circuit for driving said active matrix circuit formed over said substrate, said CMOS circuit comprising at least a pair of N-channel and P-channel thin film transistors.
Claim 26
Dependent Claim
138 words
An active matrix display device comprising: a substrate having an insulating surface; an active matrix circuit over said substrate, said active matrix circuit comprising: at least one thin film transistor having source and drain regions and a channel region therebetween in a semiconductor film, and a gate electrode adjacent to said channel region with a gate insulating film interposed therebetween; a pixel electrode formed over said substrate and electrically connected to one of said source and drain regions; a capacitor formed between a wiring and a portion of said pixel electrode with an anodic oxide film interposed therebetween, said anodic oxide film comprising an oxidized surface of said wiring; and a CMOS circuit for driving said active matrix circuit formed over said substrate, said CMOS circuit comprising at least a pair of N-channel and P-channel thin film transistors.
Claim 27
Dependent Claim
47 words
An active matrix display device according to claim 19 wherein at least one of said wiring and said gate electrode comprises a material selected from the group consisting of silicon, aluminum, tantalum, titanium, tungsten, molybdenum, an alloy thereo, tantalum nitride, titanium nitride, tungsten nitride and moylbdenum nitride.
Claim 28
Dependent Claim
154 words
An active matrix display device comprising: a substrate having an insulating surface; an active matrix circuit over said substrate, said active matrix circuit comprising: at least one thin film transistor having source and drain regions and a channel region therebetween within a semiconductor film, and a gate electrode adjacent to said channel region with a gate insulating film interposed therebetween. a pixel electrode formed over said substrate and electrically connected to one of said source and drain regions; a capacitor formed between a wiring and a portion of said pixel electrode with an anodic oxide film interposed therebetween, said anodic oxide film comprising an oxidized surface of said wiring; and a peripheral circuit of a signal output utilized for a driving circuit of said active matrix display device, said peripheral circuit comprising at least a first thin film transistor for controlling strong electric current and a second thin film transistor for a logic circuit.
Claim 29
Dependent Claim
154 words
An active matrix display device comprising: a substrate having an insulating surface; an active matrix circuit over said substrate, said active matrix circuit comprising: at least one thin film transistor having source and drain regions and a channel region therebetween within a semiconductor film, and a gate electrode adjacent to said channel region with a gate insulating film interposed therebetween. a pixel electrode formed over said substrate and electrically connected to one of said source and drain regions; a capacitor formed between a wiring and a portion of said pixel electrode with an anodic oxide film interposed therebetween, said anodic oxide film comprising an oxidized surface of said wiring; and a peripheral circuit of a signal output utilized for a driving circuit of said active matrix display device, said peripheral circuit comprising at least a first thin film transistor for controlling strong electric current and a second thin film transistor for a logic circuit.
Claim 30
Dependent Claim
47 words
An active matrix display device according to claim 21 wherein at least one of said wiring and said gate electrode comprises a material selected from the group consisting of silicon, aluminum, tantalum, titanium, tungsten, moylbdenum, an alloy thereof, tantalum nitride, titanium nitride, tungsten nitride and moylbdenum nitride.
Claim 31
Dependent Claim
147 words
An active matrix display device comprising: a substrate having an insulating surface; an active matrix circuit over said substrate, said active matrix circuit comprising; at least one thin film transistor having source and drain regions and a channel region therebetween in a semiconductor film, and a gate electrode adjacent to said channel region with a gate insulating film interposed therebetween; a pixel electrode formed over said substrate and electrically connected to one of said source and drain regions; a capacitor formed between a wiring and a portion of said pixel electrode with an oxide film interposed therebetween, said oxide film comprising an oxidized surface of said wiring; wherein said oxide film has a thickness less than 1000 Å; and a CMOS circuit for driving said active matrix circuit formed over said substrate, said CMOS circuit comprising at least a pair of N-channel and P-channel thin film transistors.
Claim 32
Dependent Claim
147 words
An active matrix display device comprising: a substrate having an insulating surface; an active matrix circuit over said substrate, said active matrix circuit comprising; at least one thin film transistor having source and drain regions and a channel region therebetween in a semiconductor film, and a gate electrode adjacent to said channel region with a gate insulating film interposed therebetween; a pixel electrode formed over said substrate and electrically connected to one of said source and drain regions; a capacitor formed between a wiring and a portion of said pixel electrode with an oxide film interposed therebetween, said oxide film comprising an oxidized surface of said wiring; wherein said oxide film has a thickness less than 1000 Å; and a CMOS circuit for driving said active matrix circuit formed over said substrate, said CMOS circuit comprising at least a pair of N-channel and P-channel thin film transistors.
Claim 33
Dependent Claim
47 words
An active matrix display device according to claim 23 wherein at least one of said wiring and said gate electrode comprises a material selected from the group consisting of silicon, aluminum, tantalum, titanium, tungsten, moylbdenum, an alloy thereof, tantalum nitride, titanium nitride, tungsten nitride and molybdenum nitride.
Claim 34
Dependent Claim
17 words
An active matrix circuit according to claim 23 wherein said oxide film is formed by anodic oxidation.
Claim 35
Dependent Claim
163 words
An active matrix display device comprising: a substrate having an insulating surface; an active matrix circuit over said substrate, said active matrix circuit comprising: at least one thin film transistor having source and drain regions and a channel region therebetween in a semiconductor film, and a gate electrode adjacent to said channel region with a gate insulating film interposed therebetween; a pixel electrode formed over said substrate and electrically connected to one of said source and drain regions; a capacitor formed between a wiring and a portion fo said pixel electrode with an oxide film interposed therebetween, said oxide film comprising an oxidized surface of said wiring; wherein said oxide film has a thickness less than 1000 Å; and a peripheral circuit of a signal output utilized for a driving circuit of said active matrix display device, said peripheral circuit comprising at least a first thin film transistor for controlling strong electric current and a second thin film transistor for a logic circuit.
Claim 36
Dependent Claim
163 words
An active matrix display device comprising: a substrate having an insulating surface; an active matrix circuit over said substrate, said active matrix circuit comprising: at least one thin film transistor having source and drain regions and a channel region therebetween in a semiconductor film, and a gate electrode adjacent to said channel region with a gate insulating film interposed therebetween; a pixel electrode formed over said substrate and electrically connected to one of said source and drain regions; a capacitor formed between a wiring and a portion fo said pixel electrode with an oxide film interposed therebetween, said oxide film comprising an oxidized surface of said wiring; wherein said oxide film has a thickness less than 1000 Å; and a peripheral circuit of a signal output utilized for a driving circuit of said active matrix display device, said peripheral circuit comprising at least a first thin film transistor for controlling strong electric current and a second thin film transistor for a logic circuit.
Claim 37
Dependent Claim
47 words
An active matrix display device according to claim 26 wherein at least one of said wiring and said gate electrode comprises a material selected from the group consisting of silicon, aluminum, tantalum, titanium, tungsten, molybdenum, an alloy thereof, tantalum nitride, titanium nitride, tungsten nitride and molybdenum nitride.
Claim 38
Dependent Claim
17 words
An active matrix circuit according to claim 26 wherein said oxide film is formed by anodic oxidation.
Claim 39
Dependent Claim
20 words
An active matrix display device according to claim 1 wherein said oxide film has a thickness less than 1000 Å.
Claim 40
Dependent Claim
20 words
An active matrix display device according to claim 4 wherein said oxide film has a thickness less than 1000 Å.
Claim 41
Dependent Claim
20 words
An active matrix display device according to claim 7 wherein said oxide film has a thickness less than 1000 Å.
Claim 42
Dependent Claim
20 words
An active matrix display device according to claim 10 wherein said oxide film has a thickness less than 1000 Å.
Claim 43
Dependent Claim
20 words
An active matrix display device according to claim 13 wherein said oxide film has a thickness less than 1000 Å.
Claim 44
Dependent Claim
20 words
An active matrix display device according to claim 16 wherein said oxide film has a thickness less than 1000 Å.
Claim 45
Dependent Claim
21 words
An active matrix display device according to claim 19 wherein said anodic oxide film has a thickness less than 1000 Å.
Claim 46
Dependent Claim
21 words
An active matrix display device according to claim 21 wherein said anodic oxide film has a thickness less than 1000 Å.
Claim 47
Dependent Claim
19 words
An active matrix display device according to claim 1 wherein said pixel electrode comprises a conductive transparent oxide film.
Claim 48
Dependent Claim
19 words
An active matrix display device according to claim 4 wherein said pixel electrode comprises a conductive transparent oxide film.
Claim 49
Dependent Claim
19 words
An active matrix display device according to claim 7 wherein said pixel electrode comprises a conductive transparent oxide film.
Claim 50
Dependent Claim
19 words
An active matrix display device according to claim 10 wherein said pixel electrode comprises a conductive transparent oxide film.
Claim 51
Dependent Claim
19 words
An active matrix display device according to claim 19 wherein said pixel electrode comprises a conductive transparent oxide film.
Claim 52
Dependent Claim
18 words
An active matrix display according to claim 21 wherein said pixel electrode comprises a conductive transparent oxide film.
Claim 53
Dependent Claim
19 words
An active matrix display device according to claim 23 wherein said pixel electrode comprises a conductive transparent oxide film.
Claim 54
Dependent Claim
19 words
An active matrix display device according to claim 26 wherein said pixel electrode comprises a conductive transparent oxide film.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-11-14 | 2004-05-15 | 2004-11-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-11-14 | 2008-05-15 | 2008-11-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-11-14 | 2012-05-15 | 2012-11-14 | $7700.00 | Window Closed / Lapsed |