US5022010A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Word decoder for a memory array
Assignee: International Business Machines Corp
•
Filing: 1989-10-30
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Granted: 1991-06-04
•
Expires: 2009-10-30
Abstract
Abstract A word decoder for a memory array includes a decode NOR/OR circuit 52 coupled to an output driver circuit 54. Decode NOR/OR circuit 52 includes a plurality of input signals IN1, IN2, IN3 connected to respective input n-channel field effect transistor (NEFTs) N1, N2, N3, all of which are parallel to a common node 1. The first input IN1 is also connected to a an active pull-up p-channel field effect transistor (PFETs) P1 which is in series with the first NFET N1 and always maintained slightly on. A bipolar transistor T4 pulls down node 1 and a pair of bleeder NFETs N4, N5 pull down nodes 3 and 2, respectively. Output driver circuit 54 is comprised of bipolar transistors T1, T2, T3 arranged in a push-pull configuration.
Inventors
- 👤 Yuen H. Chan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 19:58
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/41; G11C11/413; G11C11/417; G11C11/418; G11C8/00; G11C8/10; G11C8/12
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
183 words
A BICMOS word decode circuit for a static random access memory array, comprising: first and second input field-effect transistors (FETs) of opposite conductivity type connected in series between a first voltage source and second node, having a first node to define the connection of the source and the drain of said first and second input FET's respectively; a first input terminal connected to control gates of the first and second input FETs; third and fourth input FETs connected in parallel between the first node and a third node; second and third input terminals connected to control gates of the third and fourth input FETs, respectively; a bipolar transistor connected between the first node and a second voltage source, a control terminal of the bipolar transistor being connected to the third node; and output driving means connected between the first and second voltage sources, having inputs that are connected to the first and second nodes, responsive to the signals at the first and second nodes for producing word decode signals which are a direct function of the signals at the first and second nodes.
Claim 2
Dependent Claim
183 words
A BICMOS word decode circuit for a static random access memory array, comprising: first and second input field-effect transistors (FETs) of opposite conductivity type connected in series between a first voltage source and second node, having a first node to define the connection of the source and the drain of said first and second input FET's respectively; a first input terminal connected to control gates of the first and second input FETs; third and fourth input FETs connected in parallel between the first node and a third node; second and third input terminals connected to control gates of the third and fourth input FETs, respectively; a bipolar transistor connected between the first node and a second voltage source, a control terminal of the bipolar transistor being connected to the third node; and output driving means connected between the first and second voltage sources, having inputs that are connected to the first and second nodes, responsive to the signals at the first and second nodes for producing word decode signals which are a direct function of the signals at the first and second nodes.
Claim 3
Dependent Claim
38 words
The BICMOS word decode circuit of claim 1 in which the output driving means comprises two bipolar drive transistors in a push-pull configuration, the emitter of one bipolar drive transistor being arranged to provide the word decode signals.
Claim 4
Dependent Claim
39 words
The BICMOS word decode circuit of claim 1 further including a first discharge device coupled between the second node and the second voltage source, and a second discharge device coupled between the third node and the second voltage source.
Claim 5
Dependent Claim
41 words
The BICMOS word decode circuit of claim 2, further comprising an anti-saturation clamp comprised of a bipolar transistor coupled between the emitter of one bipolar drive transistor and the first node, and having a reference voltage connected to the control terminal.
Claim 6
Dependent Claim
28 words
The BICMOS word decode circuit of claim 3 in which each discharge device comprises an FET, each of which has a control gate coupled to a drain terminal.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-06-03 | 1994-12-03 | 1995-06-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-06-03 | 1998-12-03 | 1999-06-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-06-03 | 2002-12-03 | 2003-06-04 | $7700.00 | Window Closed / Lapsed |