BICMOS binary logic circuits

Claim 2

A binary logic circuit comprising a NOR circuit having first and second N-channel transistor devices connected in parallel and first and second P-channel transistor devices connected in series and coupled between said N-channel devices and a source of potential, a bipolar transistor having a base connected to the drain of said first P-channel device and coupled to said source of potential, a capacitor having charge selectively stored therein and coupled to an emitter of said bipolar transistor, means including a diode connected in series with at least one of said first and second N-channel devices for discharging substantially all charge on said capacitor through said diode and said at least one of said first and second N-channel devices to a point of reference potential, means for applying input signals to control electrodes of said devices, and an output terminal connected to the emitter of said transistor.

Claim 3

A binary logic circuit as set forth in claim 1 wherein said diode is a Schottky diode.

Claim 4

A binary logic circuit as set forth in claim 1 further including a second diode coupled between the base of said transistor and the drains of said N-channel devices.

Claim 5

A binary logic circuit as set forth in claim 3 wherein said second diode is a Schottky diode.

Claim 6

A binary logic circuit as set forth in claim 1 wherein said transistor is an NPN transistor having a collector connected to said source of potential.

Claim 7

A binary logic circuit as set forth in claim 1 wherein said input signal applying means includes a first input terminal coupled to said first N-channel device and to said first P-channel device and a second input terminal coupled to said second N-channel device and to said second P-channel device.

Claim 8

A binary logic circuit comprising first and second serially-connected P-channel field effect transistors, a first N-channel field effect transistor, the drain of said first P-channel transistor being coupled to the drain of said N-channel transistor, the source of said second P-channel transistor being coupled to a source of positive potential and the source of said N-channel transistor being coupled to ground, a bipolar transistor having a base coupled to the drain of said first P-channel transistor and a collector coupled to said source of positive potential, a capacitor coupled between the emitter of said bipolar transistor and ground, means including a first diode and connected in series with said first N-channel field effect transistor for discharging substantially all charge on said capacitor through said diode and said first N-channel field effect transistor to said ground, first and second input terminals, said first input terminal being coupled to the control electrode of said first P-channel transistor and said second input terminal being coupled to the control electrode of said second P-channel transistor, and means for applying an input signal through one of said first and second input terminals to a control electrode of said first N-channel field effect transistor.

Claim 9

A binary logic circuit comprising first and second serially-connected P-channel field effect transistors, a first N-channel field effect transistor, the drain of said first P-channel transistor being coupled to the drain of said N-channel transistor, the source of said second P-channel transistor being coupled to a source of positive potential and the source of said N-channel transistor being coupled to ground, a bipolar transistor having a base coupled to the drain of said first P-channel transistor and a collector coupled to said source of positive potential, a capacitor coupled between the emitter of said bipolar transistor and ground, means including a first diode and connected in series with said first N-channel field effect transistor for discharging substantially all charge on said capacitor through said diode and said first N-channel field effect transistor to said ground, first and second input terminals, said first input terminal being coupled to the control electrode of said first P-channel transistor and said second input terminal being coupled to the control electrode of said second P-channel transistor, and means for applying an input signal through one of said first and second input terminals to a control electrode of said first N-channel field effect transistor.

Claim 10

A binary logic circuit as set forth in claim 7 wherein said bipolar transistor is an NPN bipolar transistor.

Claim 11

A binary logic circuit as set forth in claim 7 wherein said diode is a Schottky diode.

Claim 12

A binary logic circuit as set forth in claim 7 further including a second diode connected between the drains of said first P-channel and N-channel transistors.

Claim 13

A binary logic circuit as set forth in claim 10 wherein said first and second diodes are Schottky diodes.

Claim 14

A binary logic circuit as set forth in claim 7 further including a second N-channel field effect transistor connected in parallel with said first N-channel transistor, said input signal applying means being connected to said first input terminal and said second input terminal being further coupled to the control electrode of said second N-channel transistor.

Claim 15

A binary logic circuit comprising first and second P-channel field effect transistors having control electrodes, a bipolar transistor having an emitter, a base and a collector connected to a source of positive potential, said first and second transistors being serially-connected between the base of said bipolar transistor and said source of positive potential, first and second parallelly-connected N-channel field effect transistors having control electrodes and having sources connected to ground, a first Schottky barrier diode, said first diode being connected between the drains of said first P-channel and N-channel transistors a load capacitor connected between the emitter of said bipolar transistor and ground, means including a second Schottky diode connected in series with at least one of said first and second N-channel field effect transistors for discharging substantially all charge on said load capacitor through said second Schottky diode and said at least one of said first and second N-channel field effect transistors to said ground, and first and second input terminals, said first input terminal being connected to the control electrodes of said first P-channel and N-channel transistors and said second input terminal being connected to the control electrodes of said second P-channel and N-channel transistors.

Claim 16

A binary logic circuit comprising first and second P-channel field effect transistors having control electrodes, a bipolar transistor having an emitter, a base and a collector connected to a source of positive potential, said first and second transistors being serially-connected between the base of said bipolar transistor and said source of positive potential, first and second parallelly-connected N-channel field effect transistors having control electrodes and having sources connected to ground, a first Schottky barrier diode, said first diode being connected between the drains of said first P-channel and N-channel transistors a load capacitor connected between the emitter of said bipolar transistor and ground, means including a second Schottky diode connected in series with at least one of said first and second N-channel field effect transistors for discharging substantially all charge on said load capacitor through said second Schottky diode and said at least one of said first and second N-channel field effect transistors to said ground, and first and second input terminals, said first input terminal being connected to the control electrodes of said first P-channel and N-channel transistors and said second input terminal being connected to the control electrodes of said second P-channel and N-channel transistors.

Claim 17

A binary logic circuit as set forth in claim 13 further including a third P-channel field effect transistor having a control electrode and serially connected with said first and second P-channel transistors between the base of said bipolar transistor and said source of positive potenial, a third N-channel field effect transistor having a control electrode and connected in parallel with said first and second N-channel transistors, and a third input terminal connected to the control electrodes of said third P-channel and N-channel transistors.

Claim 18

A binary logic circuit comprising a bipolar transistor having a collector coupled to a source of positive potential, a P-channel field effect transistor coupled between the base of said bipolar transistor and said source of positive potential, a capacitor coupled to the emitter of said bipolar transistor, an N-channel field effect transistor serially coupled with said P-channel field effect transistor and disposed between said P-channel field effect transistor and a point of reference potential, an input terminal coupled to the control electrodes of said P-channel and N-channel transistors, and means including a series circuit having a diode for discharging substantially all charge on said capacitor through said diode and said N-channel transistor to said point of reference potential.

Claim 19

A binary logic circuit comprising a bipolar transistor having a collector coupled to a source of positive potential, a P-channel field effect transistor coupled between the base of said bipolar transistor and said source of positive potential, a capacitor coupled to the emitter of said bipolar transistor, an N-channel field effect transistor serially coupled with said P-channel field effect transistor and disposed between said P-channel field effect transistor and a point of reference potential, an input terminal coupled to the control electrodes of said P-channel and N-channel transistors, and means including a series circuit having a diode for discharging substantially all charge on said capacitor through said diode and said N-channel transistor to said point of reference potential.

Claim 20

A binary circuit as set forth in claim 15 wherein said bipolar transistor is an NPN transistor, said diode is a Schottky diode and the source of said N-channel transistor is connected to ground.