US4301383A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Complementary IGFET buffer with improved bipolar output
Assignee: Intersil Corp
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Filing: 1979-10-05
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Granted: 1981-11-17
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Expires: 1999-10-05
Abstract
Abstract A buffer having a first and second complementary IGFET input inverter connected in series and an output including a bipolar emitter follower with its base connected to the output of the first inverter, a second bipolar transistor connected in series with the emitter follower with its base connected to the output of the second inverter and an IGFET connected between the junction of the bipolar transistors and a voltage supply terminal and with its gate connected to the input of the first inverter. The output IGFET pulls the buffer output up to the supply voltage when the emitter of the emitter follower is at the supply voltage minus V BE .
Inventors
- 👤 David L. Taylor
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 05:56
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/90; H10D84/998; H03; H03K; H03K19/00; H03K19/01; H03K19/013; H03K19/0136; H03K19/0175; H03K19/017509; H03K19/017518; H03K19/02; H03K19/08; H03K19/094; H03K19/0944; H03K19/09448; H03K5/00; H03K5/01; H03K5/02; H03K5/023; H10D84/80; H10D84/82; H10D84/83; H10D84/85
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
149 words
A switching circuit comprising: a first complementary insulated gate field effect transistor inverter having an input and an output, said input forming the input terminal of the circuit; a second complementary insulated gate field effect transistor inverter having an input connected to the output of said first inverter and an output; a first bipolar transistor being connected in an emitter follower configuration with its base connected to the output of said first inverter; a second bipolar transistor having its base connected to the output of said second inverter and its emitter-collector path connected in series with the emitter-collector path of said first bipolar transistor, the junction of said emitter-collector paths forming the output terminal of said circuit; and an insulated gate field effect transistor having its gate connected to the input of said first inverter and its source-drain path connected between a voltage supply terminal and said output terminal.
Claim 2
Dependent Claim
149 words
A switching circuit comprising: a first complementary insulated gate field effect transistor inverter having an input and an output, said input forming the input terminal of the circuit; a second complementary insulated gate field effect transistor inverter having an input connected to the output of said first inverter and an output; a first bipolar transistor being connected in an emitter follower configuration with its base connected to the output of said first inverter; a second bipolar transistor having its base connected to the output of said second inverter and its emitter-collector path connected in series with the emitter-collector path of said first bipolar transistor, the junction of said emitter-collector paths forming the output terminal of said circuit; and an insulated gate field effect transistor having its gate connected to the input of said first inverter and its source-drain path connected between a voltage supply terminal and said output terminal.
Claim 3
Dependent Claim
28 words
The switching circuit according to claim 1 wherein said first and second bipolar transistors are NPN and said insulated gate field effect transistor is a P channel device.
Claim 4
Dependent Claim
135 words
A switching circuit comprising: a complementary insulated gate field effect transistor inverter having an input and an output; a first bipolar transistor being connected in an emitter follower configuration with its base connected to the input of said inverter; a second bipolar transistor having its base connected to the output of said inverter and its emitter-collector path connected in series with the emitter-collector path of the first bipolar transistor, the junction of said emitter-collector paths forming an output terminal; and means connected to the emitter of said first bipolar transistor for pulling the output terminal voltage to a first voltage level when the base of said first bipolar transistor is at said first voltage level and the emitter of said first bipolar transistor is at said first voltage level minus a base emitter voltage drop.
Claim 5
Dependent Claim
135 words
A switching circuit comprising: a complementary insulated gate field effect transistor inverter having an input and an output; a first bipolar transistor being connected in an emitter follower configuration with its base connected to the input of said inverter; a second bipolar transistor having its base connected to the output of said inverter and its emitter-collector path connected in series with the emitter-collector path of the first bipolar transistor, the junction of said emitter-collector paths forming an output terminal; and means connected to the emitter of said first bipolar transistor for pulling the output terminal voltage to a first voltage level when the base of said first bipolar transistor is at said first voltage level and the emitter of said first bipolar transistor is at said first voltage level minus a base emitter voltage drop.
References Cited (Backward Citations)
US3541353A
Cited
US3636372A
Cited
US3609479A
Cited
US3591855A
Cited
US3601630A
Cited
US3649843A
Cited
US3631528A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-11-16 | 1985-05-18 | 1985-11-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-11-16 | 1989-05-18 | 1989-11-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-11-16 | 1993-05-18 | 1993-11-17 | $7700.00 | Window Closed / Lapsed |