Buffer circuit and integrated semiconductor circuit structure formed of bipolar and CMOS transistor elements

Claim 2

A buffer circuit comprising at least one pair of bipolar transistors, each of said pair of bipolar transistors having emitter, collector and base regions in an emitter follower circuit configuration; at least one pair of FET transistors for each pair of bipolar transistors and each having source, drain, and gate regions defining a conducting channel between its source and drain, one of said pair of FET transistors connected with its conducting channel in series with the emitter region of one of said pair of bipolar transistors and the other of said pair of FET transistors connected with its conducting channel in series with the emitter of the other of said pair of bipolar transistors, each FET of said pair of FET transistors respectively connected in circuit with the emitter region of the bipolar transistor so that said FET transistor is in a conduction state opposite said bipolar transistor to which it is connected upon the application of a bias voltage to the transistors and of input signals to the bases of the bipolar transistors, the gate region of each FET of said pair of FET transistors connected to the emitter region of the bipolar transistor connected in series with the conducting channel of the other FET of said pair of FET transistors; and a pair of complementary FET transistors being connectable to said bias voltage, each having source, drain, and gate regions defining a conducting channel between its source and drain, the conducting channels of said pair of complementary FET transistors serially connected so that each defines a current path extending to a common junction, said common junction connected to said base region of one transistor of said pair of bipolar transistors, the gate regions of said pair of complementary FET transistors connected together and to the base region of the other transistor of said pair of bipolar transistors.

Claim 3

A buffer circuit comprising; a first bipolar transistor having emitter, base, and collector regions; a first FET transistor having source, drain, and gate regions defining a conducting channel between its source and drain regions, said emitter region of said first bipolar transistor connected in series with the conducting channel of said first FET transistor to define a first junction, said first bipolar transistor and said first FET transistor being connected between a voltage supply and a potential reference with the emitter and collector regions of said first bipolar transistor and the conducting channel of said first FET transistor in series therewith; a second bipolar transistor having emitter, base, and collector regions; a second FET transistor having source, drain, and gate regions defining a conducting channel between its source and drain regions, said emitter region of said second bipolar transistor connected in series with the conducting channel of said second FET transistor to define a second junction, said second bipolar transistor and said second FET transistor being connected between said voltage supply and said potential reference with the emitter and collector regions of said second bipolar transistor and the conducting channel of said second FET transistor in series therewith, said gate region of said first FET transistor connected to said second junction and said gate region of said second FET transistor connected to said first junction; two complementary FET transistors each having source, drain, and gate regions defining a conducting channel between its source and drain regions, the conducting channel of one FET of the complementary FET transistors coupled between a third junction and a first terminal connectable to said voltage supply, the conducting channel of the other FET of the complementary FET transistors coupled between said third junction and a second terminal convertable to said potential reference, said third junction connected to the base region of one transistor of said bipolar transistors and the gate regions of said two complementary FET transistors connected to the base region of the other transistor of said bipolar transistor, whereby each serially connected bipolar transistor and FET transistor are maintained in opposite steady-state conduction states.

Claim 4

A buffer circuit comprising; a first bipolar transistor having emitter, base, and collector regions; a first FET transistor having source, drain, and gate regions defining a conducting channel between its source and drain regions, said emitter region of said first bipolar transistor connected in series with the conducting channel of said first FET transistor to define a first junction, said first bipolar transistor and said first FET transistor being connected between a voltage supply and a potential reference with the emitter and collector regions of said first bipolar transistor and the conducting channel of said first FET transistor in series therewith; a second bipolar transistor having emitter, base, and collector regions; a second FET transistor having source, drain, and gate regions defining a conducting channel between its source and drain regions, said emitter region of said second bipolar transistor connected in series with the conducting channel of said second FET transistor to define a second junction, said second bipolar transistor and said second FET transistor being connected between said voltage supply and said potential reference with the emitter and collector regions of said second bipolar transistor and the conducting channel of said second FET transistor in series therewith, said gate region of said first FET transistor connected to said second junction and said gate region of said second FET transistor connected to said first junction; two complementary FET transistors each having source, drain, and gate regions defining a conducting channel between its source and drain regions, the conducting channel of one FET of the complementary FET transistors coupled between a third junction and a first terminal connectable to said voltage supply, the conducting channel of the other FET of the complementary FET transistors coupled between said third junction and a second terminal convertable to said potential reference, said third junction connected to the base region of one transistor of said bipolar transistors and the gate regions of said two complementary FET transistors connected to the base region of the other transistor of said bipolar transistor, whereby each serially connected bipolar transistor and FET transistor are maintained in opposite steady-state conduction states.

Claim 5

A buffer circuit comprising: at least one pair of bipolar transistors, each transistor of said pair of bipolar transistors having emitter, collector and base regions; at least one pair of FET transistors for each pair of bipolar transistors and each FET transistor having source, drain, and gate regions defining a conducting channel between its source and drain, one FET transistor of said pair of FET transistors having its conductivity channel serially connected to the emitter region of one transistor of said pair of bipolar transistors and the other FET transistor of said pair of FET transistors connected to the emitter region of the bipolar transistor connected in series with the conducting channel of the other FET transistor of said pair of FET transistors, each bipolar transistor and serially connected FET transistor being connectable between said voltage supply and said potential reference and of a conductivity type wherein the emitter of said bipolar transistor is of the same conductivity type as the channel of said serially connected FET transistor, and a pair of complementary FET transistors, each FET transistor having source, drain, and gate regions defining a conducting channel between its source and drain, the conducting channels of said pair of complementary FET transistors being serially connected together to define a common junction, the serially connected complementary FET transistors being connectable between said voltage supply and said potential reference so that one of said pair of complementary FET transistors is of channel conductivity type opposite to that of the other of said pair of complementary FET transistors, said common junction being connected to the base region of one of said pair of bipolar transistors, and the gate regions of said pair of complementary FET transistors being connected together and to the base region of the other of said pair of bipolar transistors.

Claim 6

A buffer circuit comprising: at least one pair of bipolar transistors, each transistor of said pair of bipolar transistors having emitter, collector and base regions; at least one pair of FET transistors for each pair of bipolar transistors and each FET transistor having source, drain, and gate regions defining a conducting channel between its source and drain, one FET transistor of said pair of FET transistors having its conductivity channel serially connected to the emitter region of one transistor of said pair of bipolar transistors and the other FET transistor of said pair of FET transistors connected to the emitter region of the bipolar transistor connected in series with the conducting channel of the other FET transistor of said pair of FET transistors, each bipolar transistor and serially connected FET transistor being connectable between said voltage supply and said potential reference and of a conductivity type wherein the emitter of said bipolar transistor is of the same conductivity type as the channel of said serially connected FET transistor, and a pair of complementary FET transistors, each FET transistor having source, drain, and gate regions defining a conducting channel between its source and drain, the conducting channels of said pair of complementary FET transistors being serially connected together to define a common junction, the serially connected complementary FET transistors being connectable between said voltage supply and said potential reference so that one of said pair of complementary FET transistors is of channel conductivity type opposite to that of the other of said pair of complementary FET transistors, said common junction being connected to the base region of one of said pair of bipolar transistors, and the gate regions of said pair of complementary FET transistors being connected together and to the base region of the other of said pair of bipolar transistors.

Claim 7

The buffer circuit of claim 3 wherein the bipolar transistors of each pair are of the same conductivity type, and the FET transistors of each pair having their respective conducting channels serially connected to the emitter regions of said bipolar transistors are of the same conductivity type as said serially connected bipolar transistors.

Claim 8

The buffer circuit of claim 4 wherein the FET transistors are MOSFET transistors.

Claim 9

The buffer circuit of claim 5 wherein the bipolar transistors are NPN type bipolar transistors and the MOSFET transistors having their conducting channels serially connected to the emitters of the bipolar transistors are N-channel type MOSFET transistors.

Claim 10

The buffer circuit of claim 6 wherein the emitter of each bipolar transistor is connected to the drain of its serially connected MOSFET transistor, and the drains of the complementary MOSFET transistors are connected together to define the common junction.

Claim 11

The buffer circuit of claim 5 wherein each of the complementary MOSFET transistors has an input gate capacitance of less than about 0.2 picofarad, each of the bipolar transistors has an output impedance that is less than about 1/5 the on conducting channel resistance of the MOSFET transistor having its conducting channel serially connected to the emitter of said bipolar transistor.

Claim 12

The buffer circuit of claim 3 wherein the connected gate regions of the pair of complementary FET transistors are connected to an input terminal for receiving input signals, and at least one of the emitters of the pair of bipolar transistors is connected to an output terminal for providing output bufter signals.

Claim 13

The buffer circuit of claims 9 further comprising a signal source coupled to the input terminal and at least one signal utilization device coupled to the output terminal.

Claim 14

The buffer circuit of claim 10 wherein the signal source is a first CFET logic gate, and the signal utilization device is a second CFET logic gate.

Claim 15

The buffer circuit of claim 11 wherein both emitters of the pair of bipolar transistors are coupled to a pair of output terminals for providing output buffer signals which are the complement of each other, and each of said pair of output terminals is coupled to the CFET logic gate forming a signal utilization device.

Claim 16

The buffer circuit of either claim 11 or claim 12 wherein the FET transistors are MOSFET transistors, and the CFET logic gates are CMOS type CFET logic gates.

Claim 17

The buffer circuit of claim 10 further comprising a voltage supply means coupled in circuit with the transistors of the buffer circuit for providing operating power thereto.