Universal cell for bipolar NPN and PNP transistors and resistive elements

Claim 2

A semiconductor cell structure suitable for formation of any one electrical component selected from the group of components consisting of (i) a PNP transistor, (ii) an NPN transistor, (iii) a diode, (iv) a resistor, and (v) a crossunder, comprising: semiconductor material of a first conductivity type and having a surface; a semiconductor pocket of a second conductivity type opposite to said first conductivity type formed in said semiconductor material, said semiconductor pocket having a surface coincident with said surface of said semiconductor material; at least two regions of first conductivity type formed laterally spaced from each other in said semiconductor pocket; at least one region of said second conductivity type formed in one of said at least two regions of first conductivity type; and a conductive layer overlying but insulated from said semiconductor pocket, said conductive layer being electrically connected to said semiconductor pocket, to said at least two regions of first conductivity, and to said at least one region of second conductivity wherein said conductive layer is selectively removed to leave portions of said conductive layer electrically interconnecting selected ones of said pocket and said regions to thereby form one of said electrical components.

Claim 3

A semiconductor cell structure as in claim 1 including: a buried layer extending under all of said at least two regions; and means for contacting said buried layer.

Claim 4

A semiconductor cell structure as in claim 2 wherein said means for contacting said buried layer comprises a region of said second conductivity type but of higher conductivity than said semiconductor pocket extending from said surface toward said buried layer.

Claim 5

A semiconductor cell structure as in claim 1 wherein said first conductivity type is P type and said second conductivity type is N type.

Claim 6

A semiconductor cell structure as in claim 1 wherein one of said at least two regions of said first conductivity type is formed in an elongated shape thereby to allow contact to be made to two separate portions of said region to form from said region a resistor.

Claim 7

A semiconductor cell structure as in claim 1 wherein said conductive layer is selectively removed so as to form an NPN transistor.

Claim 8

A semiconductor cell structure as in claim 1 wherein said conductive layer is selectively removed so as to form a PNP transistor.

Claim 9

A semiconductor cell structure as in claim 1 wherein said conductive layer is selectively removed so as to form a resistor.

Claim 10

A semiconductor cell structure as in claim 1 wherein said conductive layer is selectively removed so as to form a diode.

Claim 11

A semiconductor cell structure as in claim 1 comprising a crossunder.

Claim 12

A semiconductor cell structure as in claim 10 wherein said crossunder comprises a buried crossunder.

Claim 13

A semiconductor cell structure for formation into one component selected from the group of components consisting of a first bipolar transistor, having an emitter and a collector with a selected conductivity, a second bipolar transistor, having an emitter and a collector formed with a conductivity opposite to said selected conductivity, a resistor and a diode comprising: semiconductor material of a first conductivity type; a first region of a second conductivity type opposite to said first conductivity type formed in said semiconductor material; a second region of said first conductivity type formed within said first region; a third region of said second conductivity type formed in said second region; a fourth region of said first conductivity type formed in said first region laterally spaced from said second region; a fifth region of said first conductivity type formed in said first region adjacent to, but not in contact with, said fourth region; and a conductive layer overlying but insulated from said semiconductor material, said conductive layer being electrically connected to said first, second, third, fourth and fifth regions wherein: said second bipolar transistor is formed by opening said electrical connection from said conductive layer to said second region and said third region; and said first bipolar transistor is formed by opening said electrical connection from said conductive layer to said fourth region and said fifth region.

Claim 14

A semiconductor cell structure for formation into one component selected from the group of components consisting of a first bipolar transistor, having an emitter and a collector with a selected conductivity, a second bipolar transistor, having an emitter and a collector formed with a conductivity opposite to said selected conductivity, a resistor and a diode comprising: semiconductor material of a first conductivity type; a first region of a second conductivity type opposite to said first conductivity type formed in said semiconductor material; a second region of said first conductivity type formed within said first region; a third region of said second conductivity type formed in said second region; a fourth region of said first conductivity type formed in said first region laterally spaced from said second region; a fifth region of said first conductivity type formed in said first region adjacent to, but not in contact with, said fourth region; and a conductive layer overlying but insulated from said semiconductor material, said conductive layer being electrically connected to said first, second, third, fourth and fifth regions wherein: said second bipolar transistor is formed by opening said electrical connection from said conductive layer to said second region and said third region; and said first bipolar transistor is formed by opening said electrical connection from said conductive layer to said fourth region and said fifth region.

Claim 15

A semiconductor cell structure as in claim 12 wherein said first bipolar transistor is an NPN transistor, wherein said first region comprises the collector, said second region comprises the base and said third region comprises the emitter of said NPN transistor and said second bipolar transistor is a PNP transistor wherein said fourth region comprises the emitter, said fifth region comprises the collector and said first region comprises the base of said PNP transistor.

Claim 16

A semiconductor cell structure as in claim 13 wherein said NPN transistor is a vertical transistor.

Claim 17

A semiconductor cell structure as in claim 13 wherein said PNP transistor is a lateral transistor.

Claim 18

A semiconductor cell structure as in claim 13 including: a buried layer underlying said second region, said fourth region, and said fifth region.

Claim 19

A semiconductor die comprising a plurality of semiconductor cell structures wherein each semiconductor cell structure of said plurality is a semiconductor cell structure as set forth in claim 12.

Claim 20

A semiconductor die as in claim 17 including means for interconnecting said plurality of semiconductor cell structures to form an analog circuit.

Claim 21

A semiconductor cell structure as in claim 12 including a sixth region of second conductivity type formed in said fifth region.

Claim 22

A semiconductor cell structure as in claim 19 wherein said second region of first conductivity type and said fifth region of first conductivity type are laterally spaced from each other in said first region of second conductivity type and wherein said fourth region of first conductivity type is placed between said second region and said fifth region but laterally spaced from each.

Claim 23

A semiconductor cell structure as in claim 20 wherein said conductive layer overlying but insulated from said semiconductor material is electrically connected to said sixth region.

Claim 24

A semiconductor cell structure as in claim 21 wherein said electrical connection from said conductive layer to said second region comprises at least two electrical contacts to separate portions of said second region.

Claim 25

A semiconductor cell structure as in claim 22 wherein said electrical connection from said conductive layer to said fifth region comprises at least two electrical contacts to separate portions of said fifth region.

Claim 26

A semiconductor cell structure as in claim 22 wherein said second region and said fifth region each function as a resistive element when said electrical connections from said conductive layer to said third, fourth and sixth regions are opened.

Claim 27

A semiconductor cell structure as in claim 23 wherein said second region and said fifth region each function as a resistive element when said electrical connections from said conductive layer to said third, fourth and sixth regions are opened.

Claim 28

A semiconductor cell structure as in claim 20 including a buried layer of second conductivity type but of a higher conductivity than the conductivity of said first region, formed at the interface between said first region and said semiconductor material so as to extend partly into said semiconductor material and partly into said first region; and means for electrically contacting said buried layer comprising: a seventh region of said second conductivity type but of a higher conductivity than the conductivity of said first region and an eighth region of said second conductivity type but of a higher conductivity than said first region both said seventh and eighth regions being formed at the surface of said first region and extending into said first region toward said buried layer.

Claim 29

A semiconductor cell structure as in claim 26 including: means for making electrical contact to said seventh region; and means for making electrical contact to said eighth region.

Claim 30

A semiconductor cell structure as in claim 27 wherein said means for making electrical contact to said seventh region comprises at least two vias through insulation overlying said seventh region by which electrical contact is made to two separate portions of said seventh region such that the material between said two portions comprises a resistive element; and said means for making electrical contact to said eighth region comprises at least two vias through insulation overlying said eighth region by which electrical contact is made to two separate portions of said eighth region such that the material between said two portions comprises a resistive element.

Claim 31

A semiconductor cell structure as in claim 26 wherein said seventh region is adjacent to but laterally spaced from said fifth region and said eighth region is adjacent to but laterally spaced from said second region.

Claim 32

A semiconductor cell structure as in claim 29 wherein said second region and said fifth region are located symetrically opposite but laterally spaced from said fourth region, said seventh region is adjacent to but laterally spaced from said fifth region and said eighth region is adjacent to but laterally spaced from said second region such that said second, third, fourth, fifth, sixth, seventh and eighth regions are symetrically located about X and Y axes of said structure.

Claim 33

A semiconductor structure comprising: a plurality of universal cell structures; and a conductive layer, electrically connected to each cell in said plurality of universal cell structures, overlying but insulated from said plurality of universal cell structures wherein each universal cell structure further comprises: semiconductor material of a first conductivity type having a surface; a semiconductor pocket of a second conductivity type opposite to said first conductivity type formed in said semiconductor material, said semiconductor pocket having a surface coincident with said surface of said semiconductor material; at least two regions of first conductivity type formed laterally spaced from each other in said semiconductor pocket wherein one of said two regions of said first conductivity type is formed in an elongated shape thereby to allow contact to be made to two separate portions of said region; at least one region of said second conductivity type formed in one of said at least two regions of first conductivity type; a buried layer of second conductivity type extending under all of said at least two regions; and means for contacting said buried layer wherein said means for contacting said buried layer comprises a region of said second conductivity type but of higher conductivity than said semiconductor pocket extending from said surface toward said buried layer; wherein said electrical connection of said conductive layer to each cell in said plurality of universal cell structures comprises said conductive layer being electrically connected to said semiconductor pocket, to said at least two regions of first conductivity and to said at least one region of second conductivity of each of said plurality of universal cell structures; said conductive layer is removed from selected universal cell structures in said array so that each of said selected universal cell structures forms one component from the group of components consisting of (i) an NPN transistor, (ii) a PNP transistor, (iii) a resistor, (iv) a diode, (v) a crossunder, (vi) a buried crossunder, and (vii) combinations of these elements; and said conductive layer is removed so that said selected universal cell structures form an analog circuit.

Claim 34

A semiconductor structure comprising: a plurality of universal cell structures; and a conductive layer, electrically connected to each cell in said plurality of universal cell structures, overlying but insulated from said plurality of universal cell structures wherein each universal cell structure further comprises: semiconductor material of a first conductivity type having a surface; a semiconductor pocket of a second conductivity type opposite to said first conductivity type formed in said semiconductor material, said semiconductor pocket having a surface coincident with said surface of said semiconductor material; at least two regions of first conductivity type formed laterally spaced from each other in said semiconductor pocket wherein one of said two regions of said first conductivity type is formed in an elongated shape thereby to allow contact to be made to two separate portions of said region; at least one region of said second conductivity type formed in one of said at least two regions of first conductivity type; a buried layer of second conductivity type extending under all of said at least two regions; and means for contacting said buried layer wherein said means for contacting said buried layer comprises a region of said second conductivity type but of higher conductivity than said semiconductor pocket extending from said surface toward said buried layer; wherein said electrical connection of said conductive layer to each cell in said plurality of universal cell structures comprises said conductive layer being electrically connected to said semiconductor pocket, to said at least two regions of first conductivity and to said at least one region of second conductivity of each of said plurality of universal cell structures; said conductive layer is removed from selected universal cell structures in said array so that each of said selected universal cell structures forms one component from the group of components consisting of (i) an NPN transistor, (ii) a PNP transistor, (iii) a resistor, (iv) a diode, (v) a crossunder, (vi) a buried crossunder, and (vii) combinations of these elements; and said conductive layer is removed so that said selected universal cell structures form an analog circuit.

Claim 35

A semiconductor cell structure as in claim 31 wherein said first conductivity type is P type and said second conductivity type is N type.

Claim 36

A semiconductor cell structure for formation into one component from the group of components consisting of a first bipolar transistor, having an emitter and a collector with a selected conductivity, a second bipolar transistor, having an emitter and a collector formed with a conductivity opposite to said selected conductivity, and a diode, comprising: semiconductor material of a first conductivity type; a first region of a second conductivity type opposite to said first conductivity type formed in said semiconductor material; a second region of said first conductivity type formed within said first region; a third region of said second conductivity type formed in said second region; a fourth region of said first conductivity type formed in said first region laterally spaced from said second region; a fifth region of said first conductivity type formed in said first region adjacent to, but not in contact with, said fourth region; and a conductive layer overlying but insulated from said semiconductor material, said conductive layer being electrically connected to said first, second, third, fourth and fifth regions; wherein: said second bipolar transistor is formed by opening said electrical connection from said conductive layer to said second region and said third region; and said first bipolar transistor is formed by opening said electrical connection from said conductive layer to said fourth region and said fifth region.

Claim 37

A semiconductor cell structure for formation into one component from the group of components consisting of a first bipolar transistor, having an emitter and a collector with a selected conductivity, a second bipolar transistor, having an emitter and a collector formed with a conductivity opposite to said selected conductivity, and a diode, comprising: semiconductor material of a first conductivity type; a first region of a second conductivity type opposite to said first conductivity type formed in said semiconductor material; a second region of said first conductivity type formed within said first region; a third region of said second conductivity type formed in said second region; a fourth region of said first conductivity type formed in said first region laterally spaced from said second region; a fifth region of said first conductivity type formed in said first region adjacent to, but not in contact with, said fourth region; and a conductive layer overlying but insulated from said semiconductor material, said conductive layer being electrically connected to said first, second, third, fourth and fifth regions; wherein: said second bipolar transistor is formed by opening said electrical connection from said conductive layer to said second region and said third region; and said first bipolar transistor is formed by opening said electrical connection from said conductive layer to said fourth region and said fifth region.