LSI Semiconductor device and fabrication thereof

Claim 2

In a planar semiconductor integrated circuit chip comprising: a surface from which a plurality of regions of different conductivity types extend into the chip to provide transistors Schottky barrier diodes and resistors; said transistors, Schottky barrier diodes and resistors being electrically isolated one from another and arranged in a generally orthogonal array of unit cells wherein each of said unit cells is electrically isolated from each of the remaining cells of said array; said array of unit cells having 0 through m columns, where m is an integer number; said array including unit cells of at least first, second, third and fourth types, each said first type unit cell includes a transistor, first and second resistors and at least four Schottky barrier diodes (FIG. 2C), each said second type unit cell includes at least one Schottky barrier diode (FIG. 3), each said third type unit cell includes at least five transistors and at least eight resistors (FIG. 4), and each said fourth type cell includes at least two transistors, at least two Schottky Barrier diodes, and at least three resistors (FIG. 6); columns 1 through m-1 of said 0 through m columns containing only cells of said first and second types; column 0 containing at least one cell of said third type and a plurality of cells of said fourth type; and column m containing exclusively a plurality of cells of said fourth type, whereby said surface of said semiconductor chip is essentially completely utilized to provide unit cells of said first, second, third and fourth types.

Claim 3

In a planar semiconductor chip as recited in claim 1, wherein columns 1 through m-1 each include n cells arranged in n rows where n is an integer number.

Claim 4

In a planar semiconductor chip as recited in claim 2, wherein at least certain of said n rows of cells of columns 1 through m-1 contain exclusively cells of said second type.

Claim 5

In a planar semiconductor chip as recited in claim 3 wherein certain of said n rows of cells of columns 1 through m-1 contain exclusively cells of said second type and the remaining rows of said n rows of cells of columns 1 through m-1 contain exclusively cells of said first type.

Claim 6

In a planar semiconductor chip as recited in claim 4 wherein column 0 contains a voltage regulator cell and an even number of driver cells.

Claim 7

In a planar semiconductor chip as recited in claim 5 wherein column m contains an even number of driver cells.

Claim 8

In a planar semiconductor chip as recited in claim 6 wherein cells of said first type are arranged in a plurality of repetitive clusters of four like cells of said first type and each cell of each cluster of four like cells has a unique geometric orientation with respect to the remaining three like cells contained in its cluster.

Claim 9

In a planar semiconductor chip as recited in claim 7 wherein cells of said second type are arranged in a plurality of repetitive clusters of two like cells of said second type and each cell of each cluster of two like cells has a unique geometric orientation with respect to the remaining one cell contained in its cluster.

Claim 10

In a planar semiconductor chip as recited in claim 8 wherein said even number of driver cells contained in columns 0 and m are respectively arranged in pairs of two cells, where each pair of driver cells is identical to every other pair of driver cells.

Claim 11

In a planar semiconductor chip as recited in claim 9 wherein each of said plurality of repetitive clusters of four like cells of said first type cells is as depicted in FIG. 2 of the drawing.

Claim 12

In a planar semiconductor chip as recited in claim 10 wherein each of said plurality of repetitive clusters of two like cells of said second type is as depicted in FIG. 3 of the drawing.

Claim 13

In a planar semiconductor chip as recited in claim 11 wherein each cell of each said pair of driver cells is as depicted in FIGS. 5 and 6 of the drawing.

Claim 14

In a planar semiconductor chip as recited in claim 12 wherein each voltage regulator cell is as depicted in FIG. 4 of the drawing.

Claim 15

In a planar semiconductor chip as recited in claim 13 wherein each cell of the first type may be personalized (wired) in a first or second manner to respectively provide an integrated circuit having the schematic circuit diagram respectively shown in FIGS. 8A and 8C of the drawing.

Claim 16

In a planar semiconductor chip as recited in claim 14 wherein any two cells of the first type, contained in the same column, and in the same cluster of four like cells, may be personalized (wired) to provide an integrated circuit having the schematic circuit diagram shown in FIG. 7A of the drawing.

Claim 17

In a planar semiconductor chip as recited in claim 15 wherein each pair of driver cells may be personalized (wired) in a first or a second manner, where personalizing said pair of driver cells in said first manner provides an integrated circuit having the schematic circuit diagram shown in FIG. 5A of the drawing and, and where personalizing said pair of driver cells in said second manner provides first and second integrated circuits respectively having the schematic circuit diagram shown in FIG. 6A of the drawing.

Claim 18

In a planar semiconductor chip as recited in claim 16 wherein each pair of cells of the second type may be personalized (wired) to provide an integrated circuit having the schematic circuit diagram shown in FIG. 3A of the drawing.

Claim 19

In a planar semiconductor chip as recited in claim 17 wherein said voltage regulator cell may be personalized (wired) to provide an integrated circuit having the schematic circuit diagram shown in FIG. 4A of the drawing.

Claim 20

In a planar semiconductor chip as recited in claim 18 wherein predetermined ones of said cells of said first, second, third and fourth types are personalized and interconnected with at least first and second levels of metallization to provide a large scale integrated circuit device.

Claim 21

In a planar semiconductor chip as recited in claim 19 wherein in addition to said first and second levels of metallization, a third level of metallization connected in a predetermined manner to said second level of metallization is provided, and a fourth level of metallization connected in a predetermined manner to said third level of metallization, said fourth level of metallization comprising an array of conductive pads for providing an electrical interface between said large scale integrated circuit device and circuitry external to said device.

Claim 22

In a method of fabricating a large scale integrated circuit device utilizing a semiconductor chip surface having a plurality of unit cells arranged in a predetermined pattern on said semiconductor chip surface, each cell containing components such as transistors, resistors, Schottky barrier diodes, etc., each said cell having predetermined regions for electrically contacting the components of said cell, said method comprising the following steps: (a) forming a first insulating layer over the surface of said semiconductor chip, said first insulating layer being superimposed over the entire semiconductor surface of each of said cells including said cell contact regions; (b) determine in accordance with a first part number of a large scale integrated semiconductor device which ones of said plurality of unit cells are to be utilized to provide said large scale integrated semiconductor device, wherein the term part number is defined as a large scale integrated circuit device having a specific circuit configuration and performing a specific function; (c) opening a predetermined pattern of contact openings in said first insulating layer, said predetermined pattern of contact openings being strictly in accord with the required cell contact regions of the cells to be utilized to provide said large scale semiconductor device in accordance with said first part number; (d) forming a predetermined pattern of conductors, and conductive contacts in said contact openings, as a first level of metallization over said first insulating layer, where said first level of metallization personalizes each of said contact openings of said predetermined pattern of contact openings and provides intracell and at least partial intercell wiring of the cells selected to be utilized to provide said large scale integrated semiconductor device in accordance with said first part number, whereby only the utilized cells have at least certain of their contacts personalized; (e) forming a second insulating layer over said first level of metallization and the exposed portions of said first insulating layer; (f) opening a predetermined pattern of via holes in said second insulating layer, said predetermined pattern of via holes in said second insulating layer being strictly in accordance with the desired interconnection of at least certain of said conductors of said first level of metallization, and conductors of a second level of metallization to be formed hereinafter; (g) forming a predetermined pattern of conductors, and conductive vias in said via openings of said second insulating layer, as a second level of metallization over said second insulating layer, where said second level of metallization provides intercell wiring and whereby said first level of metallization is interconnected in a predetermined manner with said second level of metallization; (h) forming a third insulating layer over said second level of metallization and the exposed portions of said second insulating layer; (i) opening a predetermined pattern of via holes in said third insulating layer, said predetermined pattern of via holes in said third insulating layer being strictly in accordance with the desired interconnection of said conductors of said second level and conductors of a third level of metallization to be formed hereinafter; (j) forming a predetermined pattern of conductors, and conductive vias in said via openings of said third insulating layer, as a third level of metallization over said third insulating layer whereby said third level of metallization is interconnected in a predetermined manner with said conductors of said second level of metallization; (k) forming a fourth insulating layer over said third level of metallization and the exposed portions of said third insulating layer; (l) forming a predetermined pattern of via holes in said fourth insulating layer, where each of said via holes exposes an underlying portion of a third level conductor of said third level of metallization; and (m) forming a conductive pad in each of said via holes in said fourth insulating layer, each said conductive pad electrically contacting the underlying third level conductor and including a portion extending beyond the exposed surface of said fourth insulating layer, whereby a predetermined pattern of contacts is provided as an electrical interface between the large scale integrated semiconductor device in accordance with said first part number and circuitry external to said device.

Claim 23

In a method of fabricating a large scale integrated circuit device utilizing a semiconductor chip surface having a plurality of unit cells arranged in a predetermined pattern on said semiconductor chip surface, each cell containing components such as transistors, resistors, Schottky barrier diodes, etc., each said cell having predetermined regions for electrically contacting the components of said cell, said method comprising the following steps: (a) forming a first insulating layer over the surface of said semiconductor chip, said first insulating layer being superimposed over the entire semiconductor surface of each of said cells including said cell contact regions; (b) determine in accordance with a first part number of a large scale integrated semiconductor device which ones of said plurality of unit cells are to be utilized to provide said large scale integrated semiconductor device, wherein the term part number is defined as a large scale integrated circuit device having a specific circuit configuration and performing a specific function; (c) opening a predetermined pattern of contact openings in said first insulating layer, said predetermined pattern of contact openings being strictly in accord with the required cell contact regions of the cells to be utilized to provide said large scale semiconductor device in accordance with said first part number; (d) forming a predetermined pattern of conductors, and conductive contacts in said contact openings, as a first level of metallization over said first insulating layer, where said first level of metallization personalizes each of said contact openings of said predetermined pattern of contact openings and provides intracell and at least partial intercell wiring of the cells selected to be utilized to provide said large scale integrated semiconductor device in accordance with said first part number, whereby only the utilized cells have at least certain of their contacts personalized; (e) forming a second insulating layer over said first level of metallization and the exposed portions of said first insulating layer; (f) opening a predetermined pattern of via holes in said second insulating layer, said predetermined pattern of via holes in said second insulating layer being strictly in accordance with the desired interconnection of at least certain of said conductors of said first level of metallization, and conductors of a second level of metallization to be formed hereinafter; (g) forming a predetermined pattern of conductors, and conductive vias in said via openings of said second insulating layer, as a second level of metallization over said second insulating layer, where said second level of metallization provides intercell wiring and whereby said first level of metallization is interconnected in a predetermined manner with said second level of metallization; (h) forming a third insulating layer over said second level of metallization and the exposed portions of said second insulating layer; (i) opening a predetermined pattern of via holes in said third insulating layer, said predetermined pattern of via holes in said third insulating layer being strictly in accordance with the desired interconnection of said conductors of said second level and conductors of a third level of metallization to be formed hereinafter; (j) forming a predetermined pattern of conductors, and conductive vias in said via openings of said third insulating layer, as a third level of metallization over said third insulating layer whereby said third level of metallization is interconnected in a predetermined manner with said conductors of said second level of metallization; (k) forming a fourth insulating layer over said third level of metallization and the exposed portions of said third insulating layer; (l) forming a predetermined pattern of via holes in said fourth insulating layer, where each of said via holes exposes an underlying portion of a third level conductor of said third level of metallization; and (m) forming a conductive pad in each of said via holes in said fourth insulating layer, each said conductive pad electrically contacting the underlying third level conductor and including a portion extending beyond the exposed surface of said fourth insulating layer, whereby a predetermined pattern of contacts is provided as an electrical interface between the large scale integrated semiconductor device in accordance with said first part number and circuitry external to said device.

Claim 24

In a method of fabricating a large scale integrated circuit device, as recited in claim 21, wherein said large scale integrated circuit device is fabricated in accordance with a second part number.

Claim 25

In a method of fabricating a large scale integrated circuit device utilizing a semiconductor chip surface having a plurality of unit cells arranged in a predetermined pattern on said chip surface as recited in claim 21 wherein in step (d) at least certain ones of said contact openings are personalized to provide Schottky barrier junction contacts with the underlying cell contact regions, and the remaining ones of said contact openings are personalized to provide ohmic contacts with the underlying cell contact regions.

Claim 26

A planar semiconductor chip having an exposed surface essentially completely occupied by a sizeable number of wireable unit circuit cells: each of said unit circuit cells being electrically isolated one from another; said sizeable number of wireable unit circuit cells comprising Schottky transistor logic (STL) cells (FIG. 2C), Schottky barrier diode (SBD) cells (FIG. 3), driver cells (FIG. 6) and at least one voltage regulator cell (FIG. 4); said cells being arranged on said chip in thirty-five columns respectively designated as columns C-0, C-1, C2 - - - through C-34; said columns C-0 through C-34 physically occupying said exposed surface of said semiconductor in the order recited; column C-0 containing in the order recited a voltage regulator cell and twenty-eight driver cells; each of the columns C-1 through C-33 containing STL cells and SBD cells; and column C-34 containing thirty driver cells.

Claim 27

A planar semiconductor chip having an exposed surface essentially completely occupied by a sizeable number of wireable unit circuit cells: each of said unit circuit cells being electrically isolated one from another; said sizeable number of wireable unit circuit cells comprising Schottky transistor logic (STL) cells (FIG. 2C), Schottky barrier diode (SBD) cells (FIG. 3), driver cells (FIG. 6) and at least one voltage regulator cell (FIG. 4); said cells being arranged on said chip in thirty-five columns respectively designated as columns C-0, C-1, C2 - - - through C-34; said columns C-0 through C-34 physically occupying said exposed surface of said semiconductor in the order recited; column C-0 containing in the order recited a voltage regulator cell and twenty-eight driver cells; each of the columns C-1 through C-33 containing STL cells and SBD cells; and column C-34 containing thirty driver cells.

Claim 28

A planar semiconductor chip having an exposed surface essentially completely occupied by a sizeable number of wireable unit circuit cells, as recited in claim 24, wherein each of said columns C-1 through C-33 are identical one to another in cell content and the cells of each of the columns C-1, C-3, C-5 - - - through C-33 are mirror images of the cells of each of the columns C-2, C-4, C-6 - - - through C-32.

Claim 29

In a planar semiconductor chip having an exposed planar surface essentially completely occupied by a sizeable number of wireable cells, as recited in claim 24 wherein each STL cell is contained within a semiconductor surface area having a length L and a width W, where the orientation and perimeter dimensions of each STL cell may be defined by LU (upper length), WR (right-hand width), LL (lower length) and WL (left hand width), where L=LU=LL, W=WR=WL and length L is appreciably greater in magnitude than width W, each said STL cell comprising: a monolithic portion of P type semiconductor material of said chip having a surface area of L×W; an elongated N+ subcollector contained beneath the surface of said P type semiconductor material; said elongated N+ subcollector being essentially co-extensive in length with the length L of said cell and being relatively closely spaced from the LL perimeter length of said cell, a first N-region, a P+ region and a second N-region;

Claim 30

said first N-region, said P+ region and said second N- region, in the order recited, extending from said subcollector to said surface area; a first isolating region positioned between said first N-region and said P+ region; said first isolating region extending from said surface area to said subcollector; a second isolating region positioned between said second N-region and said P+ region; said second isolating region extending from said surface area to said subcollector; a first N+ pocket in said P+ region; said first N+ pocket being adjacently spaced from said first isolating region; a second N+ pocket in said second N-region; said second N+ pocket being adjacently spaced from said second isolating region; a first resistor formed by a first isolated elongated region of electrically resistive semiconductor material contained within said cell and a second resistor formed by a second isolated elongated region of electrically resistive semiconductor material contained within said cell; said first and second regions of electrically resistive semiconductor material extending serially in line essentially the length L of said cell; said first and second regions of electrically resistive semiconductor material being respectively adjacently spaced from the LU perimeter of said cell.

Claim 31

said first N-region, said P+ region and said second N- region, in the order recited, extending from said subcollector to said surface area; a first isolating region positioned between said first N-region and said P+ region; said first isolating region extending from said surface area to said subcollector; a second isolating region positioned between said second N-region and said P+ region; said second isolating region extending from said surface area to said subcollector; a first N+ pocket in said P+ region; said first N+ pocket being adjacently spaced from said first isolating region; a second N+ pocket in said second N-region; said second N+ pocket being adjacently spaced from said second isolating region; a first resistor formed by a first isolated elongated region of electrically resistive semiconductor material contained within said cell and a second resistor formed by a second isolated elongated region of electrically resistive semiconductor material contained within said cell; said first and second regions of electrically resistive semiconductor material extending serially in line essentially the length L of said cell; said first and second regions of electrically resistive semiconductor material being respectively adjacently spaced from the LU perimeter of said cell.

Claim 32

In a planar semiconductor chip having an exposed planar surface essentially completely occupied by a sizeable number of wireable cells as recited in claim 26 wherein said STL cells are arranged in clusters of four STL cells each of said STL cells of each cluster having a unique orientation with respect to the remaining three cells of said same cluster, each said cluster of four STL cells contained within a semiconductor area of 2L×2W where the orientation and perimeter dimensions of each cluster of four STL cells may be defined by LL+LL, WL+WL, LL+LL, WL+WL.