Direct coupled semiconductor solid state circuit having complementary symmetry

Claim 1

A SEMICONDUCTOR CIRCUIT FORMED IN A COMMON PIECE OF MATERIAL COMPRISING A PLURALITY OF DIRECT COUPLED TRANSISTORS HAVING COMPLEMENTARY SYMMETRY AND EACH INCLUDING INPUT, OUTPUT AND COMMON ELECTRODES, A FIRST LAYER OF THE ONE CONDUCTIVITY TYPE INCLUDING A PORTION FORMING THE OUTPUT ELECTRODE OF ONE TRANSISTOR AND A SECOND PORTION FORMING THE INPUT ELECTRODE OF ASNOTHER TRANSISTOR, A SECOND LAYER OF A SECOND CONDUCTIVITY TYPE ADJACENT SAID FIRST LAYER FORMING THE INPUT ELECTRODE OF SAID ONE TRANSISTOR AND THE OUTPUT ELECTRODE OF SAID OTHER TRANSISTOR, A REGION OF INTRINSIC MATERIAL IN SAID SECOND LAYER SEPARATING THE TWO ELECTRODES THEREIN, AND FURTHER LAYERS OF EACH CONDUCTIVITY TYPE FORMING THE COMMON ELECTRODES OF SAID TRANSISTORS ADJACENT RESPECTIVE SAID FIRST AND SECOND LAYERS OF DIFFERENT CONDUCTIVITY TYPE.