US4255209A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process of fabricating an improved I2 L integrated circuit utilizing diffusion and epitaxial deposition
Assignee: Harris Corp
•
Filing: 1979-12-21
•
Granted: 1981-03-10
•
Expires: 1999-12-21
Abstract
Abstract In a complementary pair of bipolar transistors, one vertical and one lateral, the vertical transistor includes a heavily doped buried emitter, lightly doped buried graded base and a heavily doped surface collector and the lateral transistor includes a lightly doped substrate base and heavily doped emitter and collector. The lateral transistor's collector isolates the lateral transistor's base from the vertical transistor's collector. This integrated circuit approach includes the I 2 L structure of the present invention and T 2 L devices. The I 2 L transistors are in dielectrically isolated regions with the vertical transistors emitter being connected to the polycrystalline support through a vertical opening in the dielectric isolation. The process of fabrication includes forming the vertical transistor's base by diffusion into a first surface of a substrate of opposite conductivity type, forming the vertical transistor's emitter epitaxially on the first surface and forming the vertical transistor's collector and the lateral transistor's emitter and collector by diffusion into the opposite surface of the substrate. The lateral transistor's collector diffusion is from the opposite surface down to the vertical transistor's base and separates the vertical transistor's collector from the portion of the substrate which is the lateral transistor's base. For integrated circuits, the process includes dividing the substrate into a plurality of dielectrically insulated regions after forming the epitaxial emitter and depositing a polycrystalline support.
Inventors
- 👤 William R. Morcom
- 👤 Hugh C. Nicolay
- 👤 Eugene R. Cox
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 17:23
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/021; H10D; H10D64/00; H10D64/20; H10D64/23; H10D64/231; H10D84/00; H10D84/01; H10D84/0112; H10D84/0116; H10D84/02; H10D84/03; H10D84/038; H10W10/00; H10W10/01; H10W10/011; H10W10/019; H10W10/10
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
165 words
A process for fabricating a high gain complementary pair of bipolar transistors comprising: diffusing impurities of a first conductivity type in a first surface of a substrate of a second conductivity type opposite said first conductivity type to form a first region; epitaxially forming a layer on said first surface of said second conductivity type; diffusing impurities of said first conductivity type into a second surface of said substrate opposite said first surface to form a second region extending from said second surface to said first region and to form a third region; diffusing impurities of said second conductivity type into said second surface to form a fourth region separated from said third region by said second region; said epitaxial layer, said first region and said fourth region forming the emitter, base and collector respectively of a first transistor and said third region, said substrate and said second region forming the emitter, base and collector respectively of a second transistor complementary to said first transistor.
Claim 2
Dependent Claim
165 words
A process for fabricating a high gain complementary pair of bipolar transistors comprising: diffusing impurities of a first conductivity type in a first surface of a substrate of a second conductivity type opposite said first conductivity type to form a first region; epitaxially forming a layer on said first surface of said second conductivity type; diffusing impurities of said first conductivity type into a second surface of said substrate opposite said first surface to form a second region extending from said second surface to said first region and to form a third region; diffusing impurities of said second conductivity type into said second surface to form a fourth region separated from said third region by said second region; said epitaxial layer, said first region and said fourth region forming the emitter, base and collector respectively of a first transistor and said third region, said substrate and said second region forming the emitter, base and collector respectively of a second transistor complementary to said first transistor.
Claim 3
Dependent Claim
32 words
The process according to claim 1 wherein said first diffusion is performed to form a graded lightly doped first region and said epitaxial growth is performed to form a heavily doped layer.
Claim 4
Dependent Claim
30 words
The process according to claim 1 wherein said substrate is a lightly doped single crystal material and said second diffusion is performed to form heavily doped second and third regions.
Claim 5
Dependent Claim
31 words
The process according to claim 1 including dividing said substrate and said epitaxial layer into a plurality of spaced regions and dielectrically isolating said spaced substrate regions by an insulative layer.
Claim 6
Dependent Claim
36 words
The process according to claim 4 including forming an opening in said insulative layer adjacent said first region and forming a polycrystalline layer of said second conductivity type on said insulative layer and in said opening.
Claim 7
Dependent Claim
30 words
The process according to claim 5 including forming transistors in other dielectrically isolated substrate regions, and forming openings in said insulative layer for each substrate region having a first region.
Claim 8
Dependent Claim
26 words
The process according to claim 5 wherein said opening is formed to have the horizontal dimension of said first region and to be vertically aligned therewith.
Claim 9
Dependent Claim
358 words
A process for fabricating an integrated circuit having I 2 L and T 2 L transistors comprising: diffusing impurities of a first conductivity type in a first surface of a substrate of a second conductivity type opposite said first conductivity type to form a plurality of spaced first regions; epitaxially forming a layer on said first surface of said second conductivity type; dividing said substrate and said epitaxial layer into a plurality of laterally spaced regions; forming an insulative layer on said epitaxial layer and the lateral substrate edges of said laterally spaced substrate regions; forming an opening in said insulative layer adjacent said epitaxial layer for each substrate region having a first region; forming a layer of said second conductivity type on said insulative layer and in said openings; diffusing impurities of said first conductivity type into a second surface of said substrate opposite said first surface (a) to form a plurality of second regions extending from said second surface to a corresponding first region, (b) to form a plurality of third regions one in each of the laterally spaced substrate regions having a first region, and (c) to form at least one fourth region in a laterally spaced substrate region not including a first region; diffusing impurities of said second conductivity type into said second surface (a) to form a plurality of fifth regions separated from a corresponding third region by a corresponding second region, (b) to form at least one sixth region in the surface of said fourth region, and (c) to form at least one seventh region in the laterally spaced substrate region including said fourth region; said epitaxial layer, said first regions and said fifth regions forming the emitter, base and collector respectively of a first plurality of first transistor of an I 2 L structure, said third regions, said substrate and said second regions forming the emitter, base and collector respectively of a plurality of second transistors of said I 2 L structure complementary to said first transistors, and said sixth region, said fourth region and said seventh region forming the emitter, base and collector respectively of a T 2 L transistor.
Claim 10
Dependent Claim
358 words
A process for fabricating an integrated circuit having I 2 L and T 2 L transistors comprising: diffusing impurities of a first conductivity type in a first surface of a substrate of a second conductivity type opposite said first conductivity type to form a plurality of spaced first regions; epitaxially forming a layer on said first surface of said second conductivity type; dividing said substrate and said epitaxial layer into a plurality of laterally spaced regions; forming an insulative layer on said epitaxial layer and the lateral substrate edges of said laterally spaced substrate regions; forming an opening in said insulative layer adjacent said epitaxial layer for each substrate region having a first region; forming a layer of said second conductivity type on said insulative layer and in said openings; diffusing impurities of said first conductivity type into a second surface of said substrate opposite said first surface (a) to form a plurality of second regions extending from said second surface to a corresponding first region, (b) to form a plurality of third regions one in each of the laterally spaced substrate regions having a first region, and (c) to form at least one fourth region in a laterally spaced substrate region not including a first region; diffusing impurities of said second conductivity type into said second surface (a) to form a plurality of fifth regions separated from a corresponding third region by a corresponding second region, (b) to form at least one sixth region in the surface of said fourth region, and (c) to form at least one seventh region in the laterally spaced substrate region including said fourth region; said epitaxial layer, said first regions and said fifth regions forming the emitter, base and collector respectively of a first plurality of first transistor of an I 2 L structure, said third regions, said substrate and said second regions forming the emitter, base and collector respectively of a plurality of second transistors of said I 2 L structure complementary to said first transistors, and said sixth region, said fourth region and said seventh region forming the emitter, base and collector respectively of a T 2 L transistor.
Claim 11
Dependent Claim
31 words
The process according to claim 8 wherein said first diffusion is performed to form graded lightly doped first regions and said epitaxial growth is performed to form a heavily doped layer.
Claim 12
Dependent Claim
31 words
The process according to claim 8 wherein said substrate is a lightly doped single crystal material and said second diffusion is performed to form heavily doped second, third and fourth regions.
Claim 13
Dependent Claim
21 words
The process according to claim 8 wherein said third diffusion is performed to form heavily doped fifth, sixth and seventh regions.
Claim 14
Dependent Claim
20 words
The process according to claim 8 wherein said openings are formed to be vertically aligned with a corresponding first region.
References Cited (Backward Citations)
US3440498A
Cited
US3508980A
Cited
US3858237A
Cited
US4032957A
Cited
US3990102A
Cited
US4076556A
Cited
US4081697A
Cited
US4087900A
Cited
US4101349A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-03-09 | 1984-09-08 | 1985-03-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-03-09 | 1988-09-08 | 1989-03-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-03-09 | 1992-09-08 | 1993-03-10 | $7700.00 | Window Closed / Lapsed |