US3990102A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor integrated circuits and method of manufacturing the same
Assignee: Hitachi Ltd
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Filing: 1975-06-26
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Granted: 1976-11-02
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Expires: 1995-06-26
Abstract
Abstract Semiconductor integrated circuits comprising a dielectric isolation semiconductor chip having a plurality of monocrystalline semiconductor regions electrically separated by a polycrystalline semiconductor and dielectric insulation films, and circuit elements formed in the monocrystalline regions, wherein the polycrystalline substrate includes a high resistivity layer and a low resistivity layer, at least the high resistivity layer is adjacent to the monocrystalline region and the low resistivity region is coupled to a contact provided on a surface of the chip, whereby an electrostatic coupling between the circuit elements is shielded by the low resistivity layer to prevent cross-talks due to the electrostatic coupling. A method of manufacturing the same is also disclosed.
Inventors
- 👤 Shinzi Okuhara
- 👤 Ichiro Ohhinata
- 👤 Masaaki Kusano
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 22:22
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/021; H10W10/00; H10W10/01; H10W10/011; H10W10/019; H10W10/10; H10W44/00; H10W44/20; Y; Y10; Y10S; Y10S148/00; Y10S148/025; Y10S148/085; Y10S148/122
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
76 words
Semiconductor integrated circuits comprising a dielectric isolation semiconductor chip having a plurality of monocrystalline semiconductor regions in a polycrystalline semiconductor substrate electrically separated by dielectric insulation films, circuit elements being formed in the monocrystalline regions, wherein the polycrystalline substrate includes a high resistivity layer and a low resistivity layer, the high resistivity layer is adjacent to the monocrystalline regions and the low resistivity layer is coupled to a contact provided on a surface of the chip.
Claim 2
Dependent Claim
76 words
Semiconductor integrated circuits comprising a dielectric isolation semiconductor chip having a plurality of monocrystalline semiconductor regions in a polycrystalline semiconductor substrate electrically separated by dielectric insulation films, circuit elements being formed in the monocrystalline regions, wherein the polycrystalline substrate includes a high resistivity layer and a low resistivity layer, the high resistivity layer is adjacent to the monocrystalline regions and the low resistivity layer is coupled to a contact provided on a surface of the chip.
Claim 3
Dependent Claim
21 words
Semiconductor integrated circuits according to claim 1, wherein the low resistivity layer is connected to the contact through a contact region.
Claim 4
Dependent Claim
25 words
Semiconductor integrated circuits according to claim 2, wherein the contact region is a monocrystalline semiconductor region formed around the periphery of the high resistivity layer.
Claim 5
Dependent Claim
94 words
Semiconductor integrated circuits comprising a dielectric isolation semiconductor chip having a plurality of monocrystalline semiconductor regions in a polycrystalline semiconductor substrate electrically separated by dielectric insulation films, circuit elements being formed in the monocrystalline regions, wherein the polycrystalline substrate includes a first high resistivity layer, a low resistivity layer and a second high resistivity layer in this order, one of the first and second high resistivity layers is adjacent to the monocrystalline regions and the low resistivity layer is connected through a contact region to a contact provided on a surface of the chip.
Claim 6
Dependent Claim
94 words
Semiconductor integrated circuits comprising a dielectric isolation semiconductor chip having a plurality of monocrystalline semiconductor regions in a polycrystalline semiconductor substrate electrically separated by dielectric insulation films, circuit elements being formed in the monocrystalline regions, wherein the polycrystalline substrate includes a first high resistivity layer, a low resistivity layer and a second high resistivity layer in this order, one of the first and second high resistivity layers is adjacent to the monocrystalline regions and the low resistivity layer is connected through a contact region to a contact provided on a surface of the chip.
Claim 7
Dependent Claim
111 words
Semiconductor integrated circuits comprising a dielectric isolation semiconductor chip having a plurality of monocrystalline semiconductor regions in a polycrystalline semiconductor substrate electrically separated by dielectric insulation films, circuit elements being formed in the monocrystalline regions, wherein the polycrystalline substrate includes a first high resistivity layer, and low resistivity layer and a high resistivity layer in this order, an insulation film being provided between the low resistivity layer and at least one of the first and second high resistivity layers, one of the first and second high resistivity layers is adjacent to the monocrystalline regions and the low resistivity layer is coupled to a contact provided on a surface of the chip.
Claim 8
Dependent Claim
111 words
Semiconductor integrated circuits comprising a dielectric isolation semiconductor chip having a plurality of monocrystalline semiconductor regions in a polycrystalline semiconductor substrate electrically separated by dielectric insulation films, circuit elements being formed in the monocrystalline regions, wherein the polycrystalline substrate includes a first high resistivity layer, and low resistivity layer and a high resistivity layer in this order, an insulation film being provided between the low resistivity layer and at least one of the first and second high resistivity layers, one of the first and second high resistivity layers is adjacent to the monocrystalline regions and the low resistivity layer is coupled to a contact provided on a surface of the chip.
Claim 9
Dependent Claim
105 words
Semiconductor integrated circuits comprising a dielectric isolation semiconductor chip having a plurality of monocrystalline semiconductor regions in a polycrystalline semiconductor substrate electrically separated by dielectric insulation films, circuit elements being formed in the monocrystalline regions, wherein the polycrystalline substrate includes a first high resistivity layer, a low resistivity layer and a second high resistivity layer in this order, one of the first and second high resistivity layers is adjacent to the monocrystalline regions and the low resistivity layer is connected, through a monocrystalline semiconductor region formed around the periphery of the one high resistivity layer, to a contact provided on a surface of the chip.
Claim 10
Dependent Claim
105 words
Semiconductor integrated circuits comprising a dielectric isolation semiconductor chip having a plurality of monocrystalline semiconductor regions in a polycrystalline semiconductor substrate electrically separated by dielectric insulation films, circuit elements being formed in the monocrystalline regions, wherein the polycrystalline substrate includes a first high resistivity layer, a low resistivity layer and a second high resistivity layer in this order, one of the first and second high resistivity layers is adjacent to the monocrystalline regions and the low resistivity layer is connected, through a monocrystalline semiconductor region formed around the periphery of the one high resistivity layer, to a contact provided on a surface of the chip.
References Cited (Backward Citations)
US3817799A
Cited
US3624463A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-11-02 | 1980-05-03 | 1980-11-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-11-02 | 1984-05-03 | 1984-11-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-11-02 | 1988-05-03 | 1988-11-02 | $7700.00 | Window Closed / Lapsed |