US3624463A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of and apparatus for indicating semiconductor island thickness and for increasing isolation and decreasing capacity between islands
Assignee: Motorola Solutions Inc
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Filing: 1969-10-17
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Granted: 1971-11-30
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Expires: 1989-10-17
Abstract
Abstract The thickness of a single crystal island, which forms part of a slab of material, is indicated by the number of lines appearing on the surface of the slab. Since the lines are edges of thin layers of an insulating material, the insulating layer or layers also act to isolate the single crystal islands from each other and also to reduce the capacity between the islands.
Inventors
- 👤 Uryon Sahari Davidsohn
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 20:12
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/60; H10D84/611; H10D84/613; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/019; H10W10/10; Y; Y10; Y10S; Y10S148/00; Y10S148/051; Y10S148/085; Y10S148/102; Y10S148/122
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
20 words
The method as recited in claim 1, and further including: forming semiconductor devices in at least one of said islands.
Claim 2
Dependent Claim
20 words
The method as recited in claim 1, wherein said interposed additional layer further includes: a plurality of visually distinguishable strata.
Claim 3
Dependent Claim
32 words
The method as recited in claim 3, and further comprising: providing a monocrystalline semiconductor body of monocrystalline silicon; and employing alternate layers of silicon oxide and polycrystalline silicon in forming said strata.
Claim 4
Dependent Claim
166 words
In combination: a body of semiconductor material having a major surface; a plurality of islands of monocrystalline material and each island having a substantially uniform depth and having an upper surface substantially coplanar with the other upper surfaces of said islands; each of said planar surfaces of said islands being coplanar with and forming part of said major surface; a depth-indicating means including a plurality of layers enclosing each of said islands except for said upper surface of each respective island and at least a first one of said layers being an insulating layer; said plurality of layers being formed having a cross sectional portion thereof coplanar with and forming part of said major surface; each of said layers being of substantially known and uniform thickness and adjacent ones of said layers being visually distinguishable one from the other; and certain of said layers terminating on said major surface whereby the depth of said islands is determined by visual inspection of said terminations of said layers.
Claim 5
Dependent Claim
56 words
The combination as recited in claim 5 and further comprising: a depth-indicating portion of one of said layers being displaceably positioned from said major surface and equidistant between adjacent islands and being aligned for representing a desired depth of corresponding ones of said islands; and said cross section portion being formed tangential with said depth-indicating portion.
Claim 6
Dependent Claim
36 words
The combination as recited in claim 6, wherein said monocrystalline material is silicon; said two layers of insulating layers are silicon oxide; and said visually distinguishable strata are alternate layers of silicon oxide and polycrystalline silicon.
Claim 7
Dependent Claim
36 words
The combination as recited in claim 5, and further comprising: at least one semiconductor device formed in at least one of said islands; and means for passivating said major surface having said semiconductor device formed therein.
Claim 8
Dependent Claim
26 words
The combination as recited in claim 5, wherein: said monocrystalline material is silicon; said plurality of layers are alternate layers of silicon oxide and polycrystalline silicon.
Claim 9
Dependent Claim
26 words
The combination as recited in claim 5, wherein said depth-indicating means comprises: at least two layers of insulating material; and a plurality of visually distinguishable strata.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-11-29 | 1975-05-31 | 1975-11-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-11-29 | 1979-05-31 | 1979-11-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-11-29 | 1983-05-31 | 1983-11-30 | $7700.00 | Window Closed / Lapsed |