US4851893A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Programmable active/passive cell structure
Assignee: Exar Corp
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Filing: 1987-11-19
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Granted: 1989-07-25
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Expires: 2007-11-19
Abstract
Abstract An improved cell structure which can be programmed to have resistors, an NPN transistor or a PNP lateral transistor in a linear arrangement with an open PNP structure. The PNP collector regions are made parallel to a PNP emitter, with lightly doped resistive P-regions attached to the ends of the emitter region to prevent the flow of current to the P-isolation boundary region. At least one base region is provided in line with a collector region and adjacent one of the resistive regions connected to the emitter.
Inventors
- 👤 Piccolo G. Giannella
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 22:44
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/90; H10D84/901; H10D84/101; H10D84/121; H10D84/125
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
79 words
A semiconductor cell structure for a PNP transistor comprising: a first P-doped emitter region having a first doping level; at least a first P-doped collector region proximate said emitter region; at least one P-doped resistor region having a second doping level lower than said first doping level and being coupled to said emitter region at an edge of said emitter region not facing said collector region; and at least one N-doped base region proximate said emitter and collector regions.
Claim 2
Dependent Claim
79 words
A semiconductor cell structure for a PNP transistor comprising: a first P-doped emitter region having a first doping level; at least a first P-doped collector region proximate said emitter region; at least one P-doped resistor region having a second doping level lower than said first doping level and being coupled to said emitter region at an edge of said emitter region not facing said collector region; and at least one N-doped base region proximate said emitter and collector regions.
Claim 3
Dependent Claim
25 words
The cell structure of claim 1 further comprising an N+ buried layer coupled to said base region and extending below said emitter and collector regions.
Claim 4
Dependent Claim
27 words
The cell structure of claim 1 further comprising a second P-doped collector region, said first and second collector regions being on opposite sides of said emitter region.
Claim 5
Dependent Claim
30 words
The cell structure of claim 3 further comprising a second P-doped resistor region coupled to said emitter region at an edge of said emitter region opposite said first resistor region.
Claim 6
Dependent Claim
16 words
The cell structure of claim 1 further comprising an N-doped emitter region within said collector region.
Claim 7
Dependent Claim
105 words
A semiconductor cell structure adaptable for forming a PNP transistor, comprising: a first elongate P-doped emitter region having two long sides, two short sides and having a first doping level; second and third elongate P-doped collector regions substantially parallel to said emitter region adjacent opposite long sides of said emitter region; fourth and fifth resistive P-doped regions coupled to opposite short sides of said emitter region and having a second doping level lower than said first doping level; and first and second N-doped base regions adjacent said second and third collector regions, respectively, on opposite sides of one of said fourth and fifth resistive regions.
Claim 8
Dependent Claim
105 words
A semiconductor cell structure adaptable for forming a PNP transistor, comprising: a first elongate P-doped emitter region having two long sides, two short sides and having a first doping level; second and third elongate P-doped collector regions substantially parallel to said emitter region adjacent opposite long sides of said emitter region; fourth and fifth resistive P-doped regions coupled to opposite short sides of said emitter region and having a second doping level lower than said first doping level; and first and second N-doped base regions adjacent said second and third collector regions, respectively, on opposite sides of one of said fourth and fifth resistive regions.
Claim 9
Dependent Claim
25 words
The cell structure of claim 6 further comprising an N+ buried layer coupled to said base regions and extending below said emitter and collector regions.
Claim 10
Dependent Claim
22 words
The cell structure of claim 6 further comprising first and second N-doped emitter regions within said second and third collector regions, respectively.
Claim 11
Dependent Claim
31 words
The cell structure of claim 6 further comprising sixth and seventh P-doped resistor regions coupled to said second and third collector regions, respectively, on opposite sides from said N-doped base regions.
Claim 12
Dependent Claim
25 words
The cell structure of claim 6 further comprising at least one P+ region at one end of one of said fourth and fifth resistive regions.
Claim 13
Dependent Claim
169 words
A semiconductor cell structure comprising: a first rectangular P-doped emitter region having two long sides, two short sides and having a first doping level; second and third rectangular P-doped collector regions substantially parallel to said emitter region adjacent opposite long sides of said emitter region; fourth and fifth resistive P-doped regions coupled to opposite short sides of said emitter region and having a second doping level lower than said first doping level; first and second N-doped base regions adjacent said second and third collector regions, respectively, on opposite sides of one of said fourth and fifth resistive regions; an N+ buried layer coupled to said base regions and extending below said emitter and collector regions; first and second N-doped emitter regions within said second and third collector regions, respectively; sixth and seventh P-doped resistor regions coupled to said second and third collector regions, respectively, on opposite sides from said N-doped base regions; at least one P+ region at one end of one of said fourth and fifth resistive regions;
Claim 14
Dependent Claim
169 words
A semiconductor cell structure comprising: a first rectangular P-doped emitter region having two long sides, two short sides and having a first doping level; second and third rectangular P-doped collector regions substantially parallel to said emitter region adjacent opposite long sides of said emitter region; fourth and fifth resistive P-doped regions coupled to opposite short sides of said emitter region and having a second doping level lower than said first doping level; first and second N-doped base regions adjacent said second and third collector regions, respectively, on opposite sides of one of said fourth and fifth resistive regions; an N+ buried layer coupled to said base regions and extending below said emitter and collector regions; first and second N-doped emitter regions within said second and third collector regions, respectively; sixth and seventh P-doped resistor regions coupled to said second and third collector regions, respectively, on opposite sides from said N-doped base regions; at least one P+ region at one end of one of said fourth and fifth resistive regions;
References Cited (Backward Citations)
US3667006A
Cited
US4100563A
Cited
US4228451A
Cited
US4392069A
Cited
US4288708A
Cited
US4417265A
Cited
US4782378A
Cited
US4513306A
Cited
US4684970A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-07-24 | 1993-01-23 | 1993-07-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-07-24 | 1997-01-23 | 1997-07-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-07-24 | 2001-01-23 | 2001-07-25 | $7700.00 | Window Closed / Lapsed |