US4288708A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Differentially modulated avalanche area magnetically sensitive transistor
Assignee: International Business Machines Corp
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Filing: 1980-05-01
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Granted: 1981-09-08
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Expires: 2000-05-01
Abstract
Abstract A new semiconductive device for sensing uniaxial magnetic fields is described. The sensor is essentially a dual collector lateral bipolar transistor operated in the avalanche region. Each of the collectors exhibits two space charge resistance effects. One effect produces a negative resistance and the other produces a positive resistance. When the two space charge resistances are carefully balanced, a net zero collector resistance is achieved. A balanced condition can be maintained for a broad range of collector currents. A vertical VI property is thereby achieved. It has been found that the positive space charge resistance characteristic is inversely proportional to the ionization area and that the negative component is proportional to the area in the avalanche zone at each collector. It has been found that a magnetic field can modulate the ionization areas at the collector junctions. The area modulated results in modulation of the positive and negative space charge resistances at each collector and a resultant shift in the avalanche voltage occurs for each collector. A differential output may be obtained since the modulation effect operates oppositely on each of the collector junction areas. This mechanism accounts for the linear and differential magnetoresistive behavior of the device.
Inventors
- 👤 Albert W. Vinal
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 00:06
CPC Classifications
H; H10; H10D; H10D8/00; H10D8/50; G; G01; G01R; G01R33/00; G01R33/02; G01R33/06; H10D48/00; H10D48/40
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
321 words
A stabilized magnetically sensitive avalanche transistor having a base region of first conductivity type material and spaced emitter and collector regions of second conductivity type material forming respective PN junctions with said base region, said emitter and collector regions being connected to a source of electrical potential of proper polarity and magnitude to forward bias the emitter base junction and to reverse bias the collector base junction into avalanche generation of excess majority and minority carriers in said base region, said collector collecting said minority carriers, a region of second conductivity type forming an injector of minority carriers in said base region and a region of second conductivity type having a higher resistivity than said emitter region and said injector region extending from said emitter region to said injector region in the direction toward said collector region, said region of second conductivity type separating said emitter region from said injector region and from said base region only at a portion of said emitter base junction facing said collector base junction, there being at least two of said collector regions spaced apart from one another in said base material and approximately equidistant from said injector region, a localized impact ionization promotor means for facilitating the creation of an area of local covalent bond ruptures in the portion of the total area of said collector base junctions lying closest to said emitter, said promotor means affecting a portion of said area which is smaller than the total portion thereof lying closest to said emitter, said promotor means extending from said collector base junction area toward said emitter and serving to increase the local energy density in said smaller area to produce, upon supply to said area of said minority carriers from said injector, an abruptly conducting avalanche current generation of excess minority and majority carriers in an M factored multiplication process occurring at a characteristic voltage applied between said emitter and collector contacts.
Claim 2
Dependent Claim
321 words
A stabilized magnetically sensitive avalanche transistor having a base region of first conductivity type material and spaced emitter and collector regions of second conductivity type material forming respective PN junctions with said base region, said emitter and collector regions being connected to a source of electrical potential of proper polarity and magnitude to forward bias the emitter base junction and to reverse bias the collector base junction into avalanche generation of excess majority and minority carriers in said base region, said collector collecting said minority carriers, a region of second conductivity type forming an injector of minority carriers in said base region and a region of second conductivity type having a higher resistivity than said emitter region and said injector region extending from said emitter region to said injector region in the direction toward said collector region, said region of second conductivity type separating said emitter region from said injector region and from said base region only at a portion of said emitter base junction facing said collector base junction, there being at least two of said collector regions spaced apart from one another in said base material and approximately equidistant from said injector region, a localized impact ionization promotor means for facilitating the creation of an area of local covalent bond ruptures in the portion of the total area of said collector base junctions lying closest to said emitter, said promotor means affecting a portion of said area which is smaller than the total portion thereof lying closest to said emitter, said promotor means extending from said collector base junction area toward said emitter and serving to increase the local energy density in said smaller area to produce, upon supply to said area of said minority carriers from said injector, an abruptly conducting avalanche current generation of excess minority and majority carriers in an M factored multiplication process occurring at a characteristic voltage applied between said emitter and collector contacts.
Claim 3
Dependent Claim
53 words
A transistor as described in claim 1, wherein: said injector means is located approximately one or more diffusion lengths for minority carriers in said base material away from said emitter and said injector means is located approximately one majority carrier diffusion length for majority carriers in said base material away from said collectors.
Claim 4
Dependent Claim
41 words
A transistor as described in claim 1 or claim 2, wherein: said injector has an injection efficiency of approximately 1/2 and the product of said M factor in said multiplication and the transportation efficiency of said material is 1/2 or less.
Claim 5
Dependent Claim
39 words
Apparatus as described in claim 3, wherein: said emitter and said injector lie on a center line of symmetry in said base material, said two collectors lying on opposite sides of said line of symmetry and approximately equidistant therefrom.
Claim 6
Dependent Claim
42 words
Apparatus as described in claim 1 or claim 2, wherein: said emitter and said injector lie on a center line of symmetry in said base material, said two collectors lying on opposite sides of said line of symmetry and approximately equidistant therefrom.
Claim 7
Dependent Claim
51 words
Apparatus as described in claim 1 or 2, wherein: said injector means is located at least two diffusion lengths for minority carriers in said base material in distance away from said emitter means and approximately one majority carrier diffusion length for majority carriers in said base material away from said collectors.
Claim 8
Dependent Claim
49 words
Apparatus as described in claim 3, wherein: said injector means is located at least two diffusion lengths for minority carriers in said base material in distance away from said emitter means and approximately one majority carrier diffusion length for majority carriers in said base material away from said collectors.
Claim 9
Dependent Claim
49 words
Apparatus as described in claim 4, wherein: said injector means is located at least two diffusion lengths for minority carriers in said base material in distance away from said emitter means and approximately one majority carrier diffusion length for majority carriers in said base material away from said collectors.
Claim 10
Dependent Claim
49 words
Apparatus as described in claim 5, wherein: said injector means is located at least two diffusion lengths for minority carriers in said base material in distance away from said emitter means and approximately one majority carrier diffusion length for majority carriers in said base material away from said collectors.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-09-07 | 1985-03-09 | 1985-09-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-09-07 | 1989-03-09 | 1989-09-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-09-07 | 1993-03-09 | 1993-09-08 | $7700.00 | Window Closed / Lapsed |