EP0243034A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Programmable bonding pad
Assignee: Exar Corp
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Filing: 1987-04-08
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Granted: —
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Expires: 2007-04-08
Abstract
Abstract A bonding pad structure and method for making the same which can be connected at the metalization step to form passive or active devices in addition to forming a bonding pad. A P-doped region (34) is formed in an epitaxial layer (28) in the area of the bonding pad (22). This P-doped region (34) allows the formation of a junction capacitance between it and the epitaxial layer (28). In addition, by adding an oxide layer (36) over the P-doped region (34) an oxide capacitor can be formed between the metal bonding pad (30) and the P-doped region (34) with the oxide as the dielectric. The P-doped region can also be used as a resistance by providing metal connections (42,44) to either end. Finally, a vertical PNP transistor can be formed between the P-doped region (34), the epitaxial layer (28) and the P-doped substrate (26).
Inventors
- 👤 Giovanni Piccolo Giannella
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 05:27
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/49; H10B; H10B69/00; H10W72/00; H10W72/01; H10W72/012; H10W72/20; H10W72/251; H10W72/29; H10W72/90; H10W72/931; H10W72/932; H10W72/951; H10W72/952
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
41 words
A semiconductor structure for forming a bonding pad or other devices, comprising: an N-doped epitaxial region having a surface adapted to receive a metal layer to form a bonding pad; and a P-doped region extending from said surface into epitaxial region.
Claim 2
Dependent Claim
41 words
A semiconductor structure for forming a bonding pad or other devices, comprising: an N-doped epitaxial region having a surface adapted to receive a metal layer to form a bonding pad; and a P-doped region extending from said surface into epitaxial region.
Claim 3
Dependent Claim
28 words
The structure of claim 1 further comprising an oxide layer over said P-doped region and a metal bonding pad over said oxide layer to form an oxide capacitor.
Claim 4
Dependent Claim
24 words
The structure of c!aim 1 further comprising first and second metal contacts coupled to opposite ends of said P-doped region to provide a resistor.
Claim 5
Dependent Claim
24 words
The structure of c!aim 1 further comprising first and second metal contacts coupled to opposite ends of said P-doped region to provide a resistor.
Claim 6
Dependent Claim
46 words
The structure of claim 1 wherein said N-doped epitaxial region is joined to a P-doped substrate and further comprising an N+ region providing an electrical connection to said epitaxial region and a P-doped isolation region surrounding said structure and extending from said surface to said substrate.
Claim 7
Dependent Claim
53 words
The structure of claim 4 further comprising a first metal contact coupled to said P-doped region to form the emitter of a vertical PNP transistor, and a second metal contact coupled to said N+ region to form the base of said PNP transistor, said P-doped substrate being the collector of said PNP transistor.
Claim 8
Dependent Claim
26 words
The structure of claim 5 further comprising an N+ buried layer extending into said P-doped substrate, said N+ region being coupled to said N+ buried layer.
Claim 9
Dependent Claim
19 words
The structure of claim 6 further comprising at least a second N+ region coupled to said N+ buried layer.
Claim 10
Dependent Claim
27 words
The structure of claim 7 further comprising first and second metal contacts coupled to said first mentioned and second N+ regions, respectively, to form a cross-under connection.
Claim 11
Dependent Claim
26 words
The structure of claim 6 wherein said N+ buried layer is an elongate layer adjacent and outside an area of said substrate beneath said P-doped region.
Claim 12
Dependent Claim
16 words
The structure of claim 9 further comprising at least one N-doped region within said P-doped region.
Claim 13
Dependent Claim
20 words
The structure of claim 6 further comprising a second P-doped region and an N-doped region within said second P-doped region.
Claim 14
Dependent Claim
26 words
The structure of claim 6 further comprising a P+ diffusion area within said P-doped region, said P+ area being more heavily doped than said P-doped region.
Claim 15
Dependent Claim
123 words
A semiconductor structure for forming a bonding pad and other devices, comprising: a P-doped substrate; an N-doped epitaxial region on top of said substrate, said epitaxial region having a rectangular-shaped surface adapted to receive a metal layer to form a bonding pad; a lightly P-doped rectangular region extending from said surface into said epitaxial region; a heavily P-doped region within said lightly P-doped region; a plurality of N-doped regions within said lightly P-doped region along a first edge of said lightly P-doped region; an N+ buried layer extending into said P-doped substrate proximate said first edge of said lightly P-doped region; and a plurality of N+ regions outside said lightly P-doped region proximate said first edge and extending into said N+ buried layer.
Claim 16
Dependent Claim
123 words
A semiconductor structure for forming a bonding pad and other devices, comprising: a P-doped substrate; an N-doped epitaxial region on top of said substrate, said epitaxial region having a rectangular-shaped surface adapted to receive a metal layer to form a bonding pad; a lightly P-doped rectangular region extending from said surface into said epitaxial region; a heavily P-doped region within said lightly P-doped region; a plurality of N-doped regions within said lightly P-doped region along a first edge of said lightly P-doped region; an N+ buried layer extending into said P-doped substrate proximate said first edge of said lightly P-doped region; and a plurality of N+ regions outside said lightly P-doped region proximate said first edge and extending into said N+ buried layer.
Claim 17
Independent Claim
53 words
A method for forming a semiconductor structure adaptable to become a bonding pad or another device, comprising the steps of: growing an N-doped epitaxial region having a bonding surface adapted to receive a metal layer to form a bonding pad; and diffusing a P-type dopant into said epitaxial region beneath said bonding surface.
Claim 18
Independent Claim
53 words
A method for forming a semiconductor structure adaptable to become a bonding pad or another device, comprising the steps of: growing an N-doped epitaxial region having a bonding surface adapted to receive a metal layer to form a bonding pad; and diffusing a P-type dopant into said epitaxial region beneath said bonding surface.
References Cited (Backward Citations)
No citation records indexed.
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