US4735822A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for producing an electronic device having a multi-layer structure
Assignee: Canon Inc
•
Filing: 1986-12-24
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Granted: 1988-04-05
•
Expires: 2006-12-24
Abstract
Abstract A method for producing an electronic device having a multi-layer structure comprising one or more valence electron controlled semiconductor thin layers formed on a substrate, comprises forming at least one of said valence electron controlled semiconductor thin layers according to the photo CVD method and forming at least one of other constituent layers according to the method comprising introducing a gaseous starting material for film formation and a gaseous halogenic oxidizing agent having the property of oxidizing said starting material into a reaction space to effect chemical contact therebetween to thereby form a plurality of precursors including a precursor in an excited state and transferring at least one of these precursors into a film forming space communicated with the reaction space as a feed source for the constituent element of the deposited film.
Inventors
- 👤 Hirokazu Ohtoshi
- 👤 Masaaki Hirooka
- 👤 Junichi Hanna
- 👤 Isamu Shimizu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 01:59
CPC Classifications
G; G03; G03G; G03G5/00; G03G5/02; G03G5/04; G03G5/08; G03G5/082; G03G5/08214; G03G5/08278; C; C23; C23C; C23C16/00; C23C16/44; C23C16/448; C23C16/452; C23C16/48; C23C16/482; H; H10; H10F; H10F10/00; H10F10/10; H10F10/17; H10F71/00; H10F71/10; H10F71/103; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2923; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/3242; H10P14/3244; H10P14/3251; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3444; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
134 words
A method for producing an electronic device having a multi-layer structure comprising one or more valence electron controlled semiconductor thin layers formed on a substrate, which comprises forming at least one of said valence electron controlled semiconductor thin layers according to the photo CVD method and forming at least one of other constituent layers according to the method comprising introducing a gaseous starting material for film formation and a gaseous halogenic oxidizing agent having the property of oxidizing said starting material into a reaction space to effect chemical contact therebetween to thereby form a plurality of precursors including a precursor in an excited state and transferring at least one of these precursors into a film forming space communicated with the reaction space as a feed source for the constituent element of the deposited film.
Claim 2
Independent Claim
134 words
A method for producing an electronic device having a multi-layer structure comprising one or more valence electron controlled semiconductor thin layers formed on a substrate, which comprises forming at least one of said valence electron controlled semiconductor thin layers according to the photo CVD method and forming at least one of other constituent layers according to the method comprising introducing a gaseous starting material for film formation and a gaseous halogenic oxidizing agent having the property of oxidizing said starting material into a reaction space to effect chemical contact therebetween to thereby form a plurality of precursors including a precursor in an excited state and transferring at least one of these precursors into a film forming space communicated with the reaction space as a feed source for the constituent element of the deposited film.
Claim 3
Dependent Claim
21 words
A method for producing an electronic device according to claim 1, wherein said gaseous starting material is a chain silane compound.
Claim 4
Dependent Claim
22 words
A method for producing an electronic device according to claim 2, wherein said chain silane compound is a straight chain silane compound.
Claim 5
Dependent Claim
34 words
A method for producing an electronic device according to claim 3, wherein said straight chain silane compound is represented by the formula Si n H 2n+2 (n is an integer of 1 to 8).
Claim 6
Dependent Claim
22 words
A method for producing an electronic device according to claim 2, wherein said chain silane compound is a branched chain silane compound.
Claim 7
Dependent Claim
25 words
A method for producing an electronic device according to claim 1, wherein said gaseous starting material is a silane compound having a silicon cyclic structure.
Claim 8
Dependent Claim
21 words
A method for producing an electronic device according to claim 1, wherein said gaseous starting material is a chain germane compound.
Claim 9
Dependent Claim
33 words
A method for producing an electronic device accoring to claim 7, wherein said chain germanium compound is represented by the formula Ge m H 2m+2 (m is an integer of 1 to 5).
Claim 10
Dependent Claim
21 words
A method for producing an electronic device according to claim 1, wherein said gaseous starting material is a hydrogenated tin compound.
Claim 11
Dependent Claim
21 words
A method for producing an electronic device according to claim 1, wherein said gaseous starting material is a tetrahedral type compound.
Claim 12
Dependent Claim
21 words
A method for producing an electronic device according to claim 1, wherein said gaseous halogenic oxidizing agent contains a halogen gas.
Claim 13
Dependent Claim
20 words
A method for producing an electronic device according to claim 1, wherein said gaseous halogenic oxidizing agent contains fluorine gas.
Claim 14
Dependent Claim
20 words
A method for producing an electronic device according to claim 1, wherein said gaseous halogenic oxidizing agent contains chlorine gas.
Claim 15
Dependent Claim
26 words
A method for producing an electron device according to claim 1, wherein said gaseous halogenic oxidizing agent is a gas containing fluorine atoms as a constituent.
Claim 16
Dependent Claim
23 words
A method for producing an electronic device according to claim 1, wherein said gaseous halogenic oxidizing agent contains a halogen under nascent state.
Claim 17
Dependent Claim
41 words
A method for producing an electronic device according to claim 1, wherein said substrate is arranged at a position opposed to the direction in which said gaseous starting material and said gaseous halogenic oxidizing agent are introduced into said reaction space.
References Cited (Backward Citations)
US31708A
Cited
US3288829A
Cited
US3271180A
Cited
US3306768A
Cited
US3473978A
Cited
US3916034A
Cited
US3907616A
Cited
US4042006A
Cited
US3914515A
Cited
US3984587A
Cited
US3888705A
Cited
US3892608A
Cited
USRE31708E
Cited
US4146657A
Cited
DE2830081A1
Cited
US4147571A
Cited
US4250205A
Cited
US4220488A
Cited
GB2038086A
Cited
US4397933A
Cited
US4239811A
Cited
US4448801A
Cited
US4522663A
Cited
US4321073A
Cited
US4436769A
Cited
US4357179A
Cited
US4670086A
Cited
US4422888A
Cited
US4459163A
Cited
US4421592A
Cited
US4402762A
Cited
US4637127A
Cited
US4490208A
Cited
EP0074212A1
Cited
US4434188A
Cited
US4652463A
Cited
JPS58168215A
Cited
EP0090586A1
Cited
US4462847A
Cited
US4473598A
Cited
US4501777A
Cited
US4504518A
Cited
US4615905A
Cited
US4509997A
Cited
US4527007A
Cited
US4532199A
Cited
JPS59199035A
Cited
US4554180A
Cited
US4522662A
Cited
GB2148328A
Cited
US4637938A
Cited
JPS6043819A
Cited
US4504329A
Cited
US4645689A
Cited
US4505949A
Cited
US4624906A
Cited
US4595601A
Cited
US4624736A
Cited
US4657777A
Cited
US4609562A
Cited
US4689093A
Cited
US4671970A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-04-05 | 1991-10-05 | 1992-04-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-04-05 | 1995-10-05 | 1996-04-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-04-05 | 1999-10-05 | 2000-04-05 | $7700.00 | Window Closed / Lapsed |