Patent US4722912A successfully refreshed from Google Patents.
US4722912A
Expired / Lapsed
US
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Method of forming a semiconductor structure
Assignee: Intersil Corp
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Filing: 1986-04-28
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Granted: 1988-02-02
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Expires: 2006-04-28
Abstract
Abstract A method for forming a layer of silicon dioxide over a silicon island on an insulating surface wherein the layer on top of the island is thinner than on the sidewalls is disclosed. The silicon island is oxidized and a silicon layer is deposited thereover. The layer of silicon is oxidized and the oxide layer is anisotropically etched until the top surface of the island is exposed, leaving oxide only on the sidewalls of the island. The exposed portion of the island is then oxidized to form a thin layer of gate oxide thereon. A conductive polycrystalline silicon electrode is deposited on the oxide-covered island. The disclosed method is particularly useful in the formation of MOSFETs.
Inventors
- 👤 Doris W. Flatley
- 👤 Alfred C. Ipri
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 05:31
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/0323; H10D86/00; H10D86/01; H10D86/03; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
144 words
A method of forming a silicon dioxide layer on silicon islands on an insulating substrate comprising: (a) providing an insulating substrate having at least one silicon island disposed on a major surface thereof; (b) oxidizing the surface of the silicon island to form a layer of silicon dioxide thereover; (c) depositing a layer of silicon on the oxidized island and the substrate adjacent thereto; (d) oxidizing the silicon to form silicon dioxide; (e) anisotropically etching the silicon dioxide layer for a time sufficient to expose the top surface of the island, but insufficient to completely remove the silicon dioxide on the sidewalls of the island; and (f) oxidizing the exposed portion of the island for a time sufficient to form a layer of silicon dioxide of predetermined thickness thereon substantially thinner than the thickness of said silicon dioxide on the sidewalls of said island.
Claim 2
Independent Claim
144 words
A method of forming a silicon dioxide layer on silicon islands on an insulating substrate comprising: (a) providing an insulating substrate having at least one silicon island disposed on a major surface thereof; (b) oxidizing the surface of the silicon island to form a layer of silicon dioxide thereover; (c) depositing a layer of silicon on the oxidized island and the substrate adjacent thereto; (d) oxidizing the silicon to form silicon dioxide; (e) anisotropically etching the silicon dioxide layer for a time sufficient to expose the top surface of the island, but insufficient to completely remove the silicon dioxide on the sidewalls of the island; and (f) oxidizing the exposed portion of the island for a time sufficient to form a layer of silicon dioxide of predetermined thickness thereon substantially thinner than the thickness of said silicon dioxide on the sidewalls of said island.
Claim 3
Dependent Claim
15 words
A method in accordance with claim 1, wherein the insulating substrate is an amorphous material.
Claim 4
Dependent Claim
13 words
A method in accordance with claim 2, wherein the amorphous material is glass.
Claim 5
Dependent Claim
13 words
A method in accordance with claim 2, wherein the silicon island is polycrystalline.
Claim 6
Dependent Claim
13 words
A method in accordance with claim 2, wherein the silicon island is monocrystalline.
Claim 7
Dependent Claim
15 words
A method in accordance with claim 1, wherein the insulating substrate is a crystalline material.
Claim 8
Dependent Claim
22 words
A method in accordance with claim 6, wherein the crystalline material is selected from the group consisting of sapphire, spinel and beryllia.
Claim 9
Dependent Claim
13 words
A method in accordance with claim 7, wherein the crystalline material is sapphire.
Claim 10
Dependent Claim
13 words
A method in accordance with claim 7, wherein the silicon island is monocrystalline.
Claim 11
Dependent Claim
21 words
A method in accordance with claim 1, wherein the silicon layer is deposited over the oxidized island in the amorphous state.
Claim 12
Dependent Claim
26 words
A process in accordance with claim 1, additionally including the step depositing a conductive polycrystalline silicon electrode on said layer of silicon dioxide of predetermined thickness.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-02-01 | 1991-08-03 | 1992-02-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-02-01 | 1995-08-03 | 1996-02-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-02-01 | 1999-08-03 | 2000-02-02 | $7700.00 | Window Closed / Lapsed |