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US6562715B1
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Barrier layer structure for copper metallization and method of forming the structure
Assignee: Applied Materials Inc
•
Filing: 2000-08-09
•
Granted: 2003-05-13
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Expires: 2020-08-09
Abstract
Abstract A barrier layer structure and a method of forming the structure. The barrier layer structure comprises a bilayer, with a first layer formed by chemical vapor deposition and a second layer formed by physical vapor deposition. The first barrier layer comprises a metal or a metal nitride and the second barrier layer comprises a metal or a metal nitride. The barrier bilayer is applicable to copper metallization.
Inventors
- 👤 Ling Chen
- 👤 Christophe Marcadal
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:44
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10W20/035; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/34; C23C28/00; C23C28/30; C23C28/32; C23C28/322; C23C28/34; H10W20/042; H10W20/043; H10W20/044; H10P; H10P14/00; H10P14/40; H10P14/418; H10W20/0425
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
69 words
A method of copper metallization, comprising: depositing a refectory metal barrier layer by chemical vapor deposition; depositing a refractory metal nitride barrier layer by physical vapor deposition on the refectory metal barrier layer; depositing a copper seed layer by physical vapor deposition on the refractory metal nitride barrier layer; and then depositing a copper layer on the copper seed layer at conditions sufficient to form a (111) crystalline orientation.
Claim 2
Independent Claim
69 words
A method of copper metallization, comprising: depositing a refectory metal barrier layer by chemical vapor deposition; depositing a refractory metal nitride barrier layer by physical vapor deposition on the refectory metal barrier layer; depositing a copper seed layer by physical vapor deposition on the refractory metal nitride barrier layer; and then depositing a copper layer on the copper seed layer at conditions sufficient to form a (111) crystalline orientation.
Claim 3
Dependent Claim
27 words
The method of claim 1 , wherein the refectory metal barrier layer comprises one or more metals selected from the group consisting of titanium, tantalum and tungsten.
Claim 4
Dependent Claim
23 words
The method of claim 1 , wherein the refectory metal barrier layer has a thickness between about 25 Å and about 100 Å.
Claim 5
Dependent Claim
26 words
The method of claim 1 , wherein the refractory metal nitride barrier layer comprises a metal selected from the group consisting of tantalum, titanium and tungsten.
Claim 6
Dependent Claim
27 words
The method of claim 1 , wherein the refractory metal nitride barrier layer is tantalum nitride, titanium nitride, tungsten nitride, titanium silicon nitride, or tantalum silicon nitride.
Claim 7
Dependent Claim
24 words
The method of claim 1 , wherein the refractory metal nitride barrier layer has a thickness between about 25 Å and about 300 Å.
Claim 8
Dependent Claim
22 words
The method of claim 1 , wherein the copper seed layer is deposited at conditions sufficient to form a (111) crystalline orientation.
Claim 9
Independent Claim
77 words
A method of copper metallization, comprising: depositing a refectory metal barrier layer by chemical vapor deposition; depositing a refractory metal nitride barrier layer by physical vapor deposition on the refectory metal barrier layer, depositing a copper seed layer by physical vapor deposition on the refractory metal nitride barrier layer at conditions sufficient to form a (111) crystalline orientation; and then depositing a copper layer on the copper seed at conditions sufficient to form a (111) crystalline orientation.
Claim 10
Independent Claim
77 words
A method of copper metallization, comprising: depositing a refectory metal barrier layer by chemical vapor deposition; depositing a refractory metal nitride barrier layer by physical vapor deposition on the refectory metal barrier layer, depositing a copper seed layer by physical vapor deposition on the refractory metal nitride barrier layer at conditions sufficient to form a (111) crystalline orientation; and then depositing a copper layer on the copper seed at conditions sufficient to form a (111) crystalline orientation.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-05-12 | 2006-11-11 | 2007-05-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-05-12 | 2010-11-11 | 2011-05-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-05-12 | 2014-11-11 | 2015-05-13 | $7700.00 | Window Closed / Lapsed |