US6265757B1
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US
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Forming attached features on a semiconductor substrate
Assignee: Avago Technologies International Sales Pte Ltd
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Filing: 1999-11-09
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Granted: 2001-07-24
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Expires: 2019-11-09
Abstract
Abstract A method for creating attached features while controlling the depth profile between the features is presented. First the features are formed with a separating barrier between the features. The separating barrier is then etched in a second step with an orientation dependent etchant to attach the two feature. This method can be used to create attached features of relative similar sizes or attached features of disparate sizes.
Inventors
- 👤 Michael F. Brady
- 👤 Casimir R. Nijander
- 👤 John W. Osenbach
- 👤 Michael G. Palin
- 👤 Aleksandra Yudina
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:38
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/02; H01S5/022; H01S5/023; H01S5/02325; H01S5/02326; H01S5/005
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
93 words
A microelectronic structure in a semiconductor substrate comprising: a small feature formed into said substrate to a predetermined depth and having sidewalls which are (111) surfaces; a large feature formed into said substrate to a predetermined depth and having sidewalls which are (111) surfaces, wherein said large feature is at least about 10 times as deep as said small feature; and a transition region between said small and large features, wherein said transition region has a maximum depth in said substrate which is less than about half the depth of said large feature.
Claim 2
Dependent Claim
93 words
A microelectronic structure in a semiconductor substrate comprising: a small feature formed into said substrate to a predetermined depth and having sidewalls which are (111) surfaces; a large feature formed into said substrate to a predetermined depth and having sidewalls which are (111) surfaces, wherein said large feature is at least about 10 times as deep as said small feature; and a transition region between said small and large features, wherein said transition region has a maximum depth in said substrate which is less than about half the depth of said large feature.
Claim 3
Dependent Claim
22 words
The structure of claim 1 , wherein said large feature is at least about 25 times as deep as said small feature.
Claim 4
Dependent Claim
24 words
The structure of claim 1 , wherein the bottom of said large feature is defined by the intersection of sidewalls which are (111) surfaces.
Claim 5
Dependent Claim
26 words
The structure of claim 1 , wherein the bottom of said large feature is defined by a (100) surface bounded by sidewalls which are (111) surfaces.
Claim 6
Dependent Claim
26 words
The structure of claim 1 , wherein the maximum depth of the transition region is less than about 25% of the depth of the large feature.
Claim 7
Dependent Claim
24 words
The structure of claim 1 , wherein the minimum depth of the transition region is greater than the maximum depth of the small feature.
Claim 8
Dependent Claim
97 words
A microelectronic structure for use in a laser module comprising: a large feature for holding a ball lens, wherein the sidewalls of the feature are (111) surfaces; a small feature to provide a pathway for laser light, wherein the sidewalls of the feature are (111) surfaces; a metal bonding pad in close proximity to the small feature as a mounting point for a laser; and a transition region where the small feature and large feature are attached, wherein said transition region has a maximum depth which is less than half of the depth of the large feature.
Claim 9
Dependent Claim
97 words
A microelectronic structure for use in a laser module comprising: a large feature for holding a ball lens, wherein the sidewalls of the feature are (111) surfaces; a small feature to provide a pathway for laser light, wherein the sidewalls of the feature are (111) surfaces; a metal bonding pad in close proximity to the small feature as a mounting point for a laser; and a transition region where the small feature and large feature are attached, wherein said transition region has a maximum depth which is less than half of the depth of the large feature.
Claim 10
Dependent Claim
20 words
The structure of claim 7 , wherein said large feature is about ten times as deep as said small feature.
Claim 11
Dependent Claim
20 words
The structure of claim 7 , wherein said large feature is about 25 times as deep as said small feature.
Claim 12
Dependent Claim
24 words
The structure of claim 7 , wherein the bottom of said large feature is defined by the intersection of sidewalls which are (111) surfaces.
Claim 13
Dependent Claim
26 words
The structure of claim 7 , wherein the bottom of said large feature is defined by a (100) surface bounded by sidewalls which are (111) surfaces.
Claim 14
Dependent Claim
26 words
The structure of claim 7 , wherein the maximum depth of the transition region is less than approximately 25% of the depth of the large feature.
Claim 15
Dependent Claim
24 words
The structure of claim 7 , wherein the minimum depth of the transition region is greater than the maximum depth of the small feature.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-07-23 | 2005-01-22 | 2005-07-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-07-23 | 2009-01-22 | 2009-07-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-07-23 | 2013-01-22 | 2013-07-24 | $7700.00 | Window Closed / Lapsed |