US4957592A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of using erodable masks to produce partially etched structures in ODE wafer structures
Assignee: Xerox Corp
•
Filing: 1989-12-27
•
Granted: 1990-09-18
•
Expires: 2009-12-27
Abstract
Abstract The thermal ink jet silicon wafer printhead is formed in a single etching operation by partially etching into one portion of the wafer while at the same time completely etching through another portion of the wafer. An erodable mask layer is used to delay etching of partially etched regions in the wafer, the depth of the etching being defined by the etch time after the removal of the erodable masking layer, or by the V-groove termination as determined by via opening.
Inventors
- 👤 James F. O'Neill
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 21:22
CPC Classifications
B; B41; B41J; B41J2/00; B41J2/005; B41J2/01; B41J2/135; B41J2/16; B41J2/1601; B41J2/1621; B41J2/1626; B41J2/1629; H; H10; H10P; H10P50/00; H10P50/69; H10P50/691; H10P50/693; H10P50/694
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
85 words
A method of fabricating an opening in a wafer comprising the steps of: applying an erodable first mask to a surface of the wafer; patterning the erodable first mask to define an erodable first mask layer at a desired location for the opening; applying a second mask layer over the erodable mask layer; patterning the second mask layer to expose the erodable first mask layer; anisotropically etching through the first erodable mask layer and into the wafer to form the opening to a desired depth.
Claim 2
Independent Claim
85 words
A method of fabricating an opening in a wafer comprising the steps of: applying an erodable first mask to a surface of the wafer; patterning the erodable first mask to define an erodable first mask layer at a desired location for the opening; applying a second mask layer over the erodable mask layer; patterning the second mask layer to expose the erodable first mask layer; anisotropically etching through the first erodable mask layer and into the wafer to form the opening to a desired depth.
Claim 3
Dependent Claim
26 words
The method of claim 1 further comprising the step of controlling the depth of the opening by controlling an erosion rate of the erodable mask layer.
Claim 4
Dependent Claim
25 words
The method of claim 1 further comprising the steps of controlling the depth of the opening by controlling the thickness of the erodable mask layer.
Claim 5
Dependent Claim
34 words
The method of claim 1 further comprising the step of controlling the depth of the opening by controlling the erosion rate of the erodable mask layer and the thickness of the erodable mask layer.
Claim 6
Dependent Claim
13 words
The method of claim 1, wherein the erodable mask layer is silicon dioxide.
Claim 7
Dependent Claim
15 words
The method of claim 1, wherein the erodable mask layer is a nitride masking layer.
Claim 8
Independent Claim
137 words
A method of fabricating at least two openings of different depths in a wafer, the method comprising the steps of: applying an erodable first masking layer to a surface of the wafer; patterning the erodable first masking layer to form a first via at a desired location for a first opening; applying a second masking material over the surface of the wafer and the erodable first masking layer; patterning the second masking layer to expose the first via and form a second via at a desired location for a second opening, the second via exposing the first erodable masking layer; anisotropically etching the wafer and the erodable masking layer through the first and second vias for a predetermined period of time to form the first opening with a depth greater than a depth of the second opening.
Claim 9
Independent Claim
137 words
A method of fabricating at least two openings of different depths in a wafer, the method comprising the steps of: applying an erodable first masking layer to a surface of the wafer; patterning the erodable first masking layer to form a first via at a desired location for a first opening; applying a second masking material over the surface of the wafer and the erodable first masking layer; patterning the second masking layer to expose the first via and form a second via at a desired location for a second opening, the second via exposing the first erodable masking layer; anisotropically etching the wafer and the erodable masking layer through the first and second vias for a predetermined period of time to form the first opening with a depth greater than a depth of the second opening.
Claim 10
Dependent Claim
26 words
The method of claim 7, wherein the etching of the second opening terminates at substantially the same time as the etching of the first cavity terminates.
Claim 11
Dependent Claim
20 words
The method of claim 8, wherein the etching of the first opening terminates when the predetermined period of time expires.
Claim 12
Dependent Claim
12 words
The method of claim 7 wherein the first opening is through hole.
Claim 13
Dependent Claim
27 words
The method of claim 7 further comprising the step of controlling the depth of the second opening by controlling an erosion rate of the erodable mask layer.
Claim 14
Dependent Claim
26 words
The method of claim 7 further comprising the steps of controlling the depth of the second opening by controlling the thickness of the erodable mask layer.
Claim 15
Dependent Claim
35 words
The method of claim 7 further comprising the step of controlling the depth of the second opening by controlling the erosion rate of the erodable mask layer and the thickness of the erodable mask layer.
Claim 16
Dependent Claim
13 words
The method of claim 7, wherein the erodable mask layer is silicon dioxide.
Claim 17
Dependent Claim
15 words
The method of claim 7, wherein the erodable mask layer is a nitride masking layer.
Claim 18
Independent Claim
120 words
A method of fabricating at least two openings of different depths in a wafer, the method comprising the steps of: applying a non-erodable masking layer to a surface of the wafer; patterning the non-erodable masking layer to form first and second vias at desired locations for first and second cavities, respectively; applying an erodable masking layer to the surface of the wafer to cover the first and second openings; patterning the erodable masking layer to expose the wafer surface at the first via; anisotropically etching the wafer and the erodable masking layer through the first and second vias for a predetermined period of time to form the first opening with a depth greater than a depth of the second opening.
Claim 19
Independent Claim
120 words
A method of fabricating at least two openings of different depths in a wafer, the method comprising the steps of: applying a non-erodable masking layer to a surface of the wafer; patterning the non-erodable masking layer to form first and second vias at desired locations for first and second cavities, respectively; applying an erodable masking layer to the surface of the wafer to cover the first and second openings; patterning the erodable masking layer to expose the wafer surface at the first via; anisotropically etching the wafer and the erodable masking layer through the first and second vias for a predetermined period of time to form the first opening with a depth greater than a depth of the second opening.
Claim 20
Dependent Claim
26 words
The method of claim 16, wherein the etching of the second opening terminates at substantially the same time as the etching of the first opening terminates.
Claim 21
Dependent Claim
20 words
The method of claim 17, wherein the etching of the first opening terminates when the predetermined period of time expires.
Claim 22
Dependent Claim
27 words
The method of claim 16 further comprising the step of controlling the depth of the second opening by controlling an erosion rate of the erodable mask layer.
Claim 23
Dependent Claim
26 words
The method of claim 16 further comprising the steps of controlling the depth of the second opening by controlling the thickness of the erodable mask layer.
References Cited (Backward Citations)
US32572A
Cited
US4455192A
Cited
US4683646A
Cited
USRE32572E
Cited
US4810557A
Cited
US4863560A
Cited
US4875968A
Cited
US4899178A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-09-17 | 1994-03-19 | 1994-09-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-09-17 | 1998-03-19 | 1998-09-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-09-17 | 2002-03-19 | 2002-09-18 | $7700.00 | Window Closed / Lapsed |