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US4455192A Expired / Lapsed US ⏱️ 0.0 years remaining

Formation of a multi-nozzle ink jet

Assignee: Fujifilm Business Innovation Corp
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Filing: 1982-04-05
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Granted: 1984-06-19
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Expires: 2002-04-05
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Abstract

Abstract A method for the formation of a multi-nozzle ink jet is herein disclosed. In this method a single crystal silicon plate is masked and impurities are diffused upon its surface, creating regions of echant resistance. A second single crystal silicon plate is then grown onto the first, and is masked and etched. Due to the unisotropic etching properties of single crystal silicon plates, a groove is formed in the second plate, and a plurality of nozzles is formed in the first plate. This process yields a multi-nozzle ink jet of greater overall strength and utility, while eliminating the waste due to etching run common in the manufacture of conventional ink jets.

Inventors

  • 👤 Masayoshi Tamai

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-27 10:37
CPC Classifications
B; B41; B41J; B41J2/00; B41J2/005; B41J2/01; B41J2/135; B41J2/16; B41J2/1621; B41J2/1626; B41J2/1629; B41J2/162; B81; B81C; B81C1/00; B81C1/00015; B81C1/00023; B81C1/00087; B81B; B81B2201/00; B81B2201/05; B81B2201/052

Claims Analysis

Total Claims: 7
Claim 1
Independent Claim 106 words
A method for the formation of a multi-nozzle ink jet, comprising the steps of: masking the surface of a single crystal silicon plate; diffusing impurities onto the unmasked regions of said plate to render said unmasked regions resistant to known etching compositions; growing a second single crystal silicon plate onto said first single crystal silicon plate; masking the surface of said second single crystal silicon plate; and diffusing an etching composition onto said masked second single crystal silicon plate, whereby said etching composition creates an opening in said second single crystal silicon plate, and creates a plurality of nozzles in said first single crystal silicon plate.
Claim 2
Independent Claim 106 words
A method for the formation of a multi-nozzle ink jet, comprising the steps of: masking the surface of a single crystal silicon plate; diffusing impurities onto the unmasked regions of said plate to render said unmasked regions resistant to known etching compositions; growing a second single crystal silicon plate onto said first single crystal silicon plate; masking the surface of said second single crystal silicon plate; and diffusing an etching composition onto said masked second single crystal silicon plate, whereby said etching composition creates an opening in said second single crystal silicon plate, and creates a plurality of nozzles in said first single crystal silicon plate.
Claim 3
Dependent Claim 34 words
The novel method of formation of a multi-nozzle ink jet as in claim 1, wherein said first single crystal silicon plate has a thickness substantially equal to the pitch of said plurality of nozzles.
Claim 4
Dependent Claim 46 words
The method for the formation of a multi-nozzle ink jet as in claim 1, wherein said first single crystal silicon plate is of approximately 0.1 to 0.2 mm in thickness and said second single crystal silicon plate is of approximately 0.6 to 0.9 mm in thickness.
Claim 5
Dependent Claim 31 words
The method for the formation of a multi-nozzle ink jet as in claim 1, wherein said impurities diffused onto said first single crystal silicon plate comprise boron to form P+ regions.
Claim 6
Dependent Claim 24 words
The method for the formation of a multi-nozzle ink jet as in claim 1, wherein said etching composition comprises water, ethylene diamine and pyrocatecol.
Claim 7
Dependent Claim 47 words
The method for the formation of the multi-nozzle ink jet as in claim 1, wherein said plurality of nozzles created in said first single crystal silicon plate have a pitch of approximately 0.25 mm and have a concentration of 6 to 10 nozzles per millimeter of length.

References Cited (Backward Citations)

US3921916A Cited
JPS5267273A Cited
JPS5267271A Cited
US4256532A Cited
JPS5549275A Cited
US4417946A Cited
US4282533A Cited
US4381341A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1987-06-19 1987-12-19 1988-06-19 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1991-06-19 1991-12-19 1992-06-19 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1995-06-19 1995-12-19 1996-06-19 $7700.00 Window Closed / Lapsed

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