JPS5267271A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Formation of through-hole onto semiconductor substrate
Assignee: Fujitsu Ltd
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Filing: 1975-12-01
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Granted: —
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Expires: 1995-12-01
Abstract
Abstract PURPOSE: To obtain a through-hole of high edge accuracy. COPYRIGHT: (C)1977,JPO&Japio
Inventors
- 👤 Toru Funayama
- 👤 Yushi Inagaki
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-28 23:28
CPC Classifications
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