JPS5267273A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Formation of through-hole onto semiconductor substrate
Assignee: Fujitsu Ltd
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Filing: 1975-12-01
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Granted: —
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Expires: 1995-12-01
Abstract
Abstract PURPOSE: A window is formed on both surfaces of semiconductor substrate, and impurities of small erosion by etching are diffused on the front surface. Then, etching is carried out from rear surface using etching liquid of crystal direction dependency. In this way, high-accuracy through-hole can be secured. COPYRIGHT: (C)1977,JPO&Japio
Inventors
- 👤 Toru Funayama
- 👤 Yushi Inagaki
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-03 09:57
CPC Classifications
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