US6002174A
Expired / Lapsed
US
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Barrier materials for semiconductor devices
Assignee: Micron Technology Inc
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Filing: 1997-12-31
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Granted: 1999-12-14
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Expires: 2017-12-31
Abstract
Abstract A barrier material deposited as a barrier film layer in a semiconductor device to reduce the interdiffusion of materials of varying electrical conductivity comprising adjacent layers in a semiconductor device is provided. The barrier material contains a transition metal, aluminum, silicon and nitrogen as essential ingredients. Suitable transition metals are tantalum and titanium. The material provides excellent resistance to diffusion across the range of temperatures occurring in an integrated circuit manufacturing process. The material also exhibits good adhesion to materials used in semiconductor processes.
Inventors
- 👤 Salman Akram
- 👤 Scott Meikle
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:27
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/418; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/425
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
61 words
A barrier layer on a semiconductor device formed of a composition comprising: a transition metal; aluminum; silicon; and nitrogen, wherein the composition comprises between about 30% and about 40% of the transition metal, between about 10% and about 20% of the aluminum, between about 0.5% and about 10% of the silicon, and between about 40% and about 50% of the nitrogen.
Claim 2
Dependent Claim
61 words
A barrier layer on a semiconductor device formed of a composition comprising: a transition metal; aluminum; silicon; and nitrogen, wherein the composition comprises between about 30% and about 40% of the transition metal, between about 10% and about 20% of the aluminum, between about 0.5% and about 10% of the silicon, and between about 40% and about 50% of the nitrogen.
Claim 3
Dependent Claim
15 words
The barrier layer of claim 1, wherein the silicon is doped with conductivity enhancing impurities.
Claim 4
Dependent Claim
14 words
The barrier layer of claim 1, wherein the transition metal is titanium or tantalum.
Claim 5
Dependent Claim
85 words
A barrier layer on a semiconductor substrate formed of a composition comprising: a transition metal; aluminum; silicon; nitrogen, wherein the composition comprises between about 30% and about 40% of the transition metal, between about 10% and about 20% of the aluminum, between about 0.5% and about 10% of the silicon, and between about 40% and about 50% of the nitrogen; and wherein the layer is deposited onto a surface of the semiconductor device by reactive sputtering, chemical vapor deposition, or plasma enhanced chemical vapor deposition.
Claim 6
Dependent Claim
85 words
A barrier layer on a semiconductor substrate formed of a composition comprising: a transition metal; aluminum; silicon; nitrogen, wherein the composition comprises between about 30% and about 40% of the transition metal, between about 10% and about 20% of the aluminum, between about 0.5% and about 10% of the silicon, and between about 40% and about 50% of the nitrogen; and wherein the layer is deposited onto a surface of the semiconductor device by reactive sputtering, chemical vapor deposition, or plasma enhanced chemical vapor deposition.
Claim 7
Dependent Claim
14 words
The barrier layer of claim 4, wherein the transition metal is titanium or tantalum.
Claim 8
Independent Claim
65 words
A device comprising: a semiconductive substrate layer; and a barrier layer formed of a composition comprising; a transition metal; aluminum; silicon; and nitrogen, wherein the composition comprises between about 30% and about 40% of the transition metal, between about 10% and about 20% of the aluminum, between about 0.5% and about 10% of the silicon, and between about 40% and about 50% of the nitrogen.
Claim 9
Independent Claim
65 words
A device comprising: a semiconductive substrate layer; and a barrier layer formed of a composition comprising; a transition metal; aluminum; silicon; and nitrogen, wherein the composition comprises between about 30% and about 40% of the transition metal, between about 10% and about 20% of the aluminum, between about 0.5% and about 10% of the silicon, and between about 40% and about 50% of the nitrogen.
Claim 10
Dependent Claim
13 words
The device of claim 6, wherein the transition metal is titanium or tantalum.
Claim 11
Dependent Claim
10 words
The device of claim 6, further comprising a conductive layer.
Claim 12
Dependent Claim
23 words
The device of claim 6, further comprising a conductive layer on the barrier layer, and the barrier layer on the semiconductive substrate layer.
Claim 13
Dependent Claim
11 words
The device of claim 6, wherein the conductive layer comprises aluminum.
Claim 14
Dependent Claim
28 words
The device of claim 6, wherein the barrier layer is deposited onto the semiconductive substrate layer by reactive sputtering, chemical vapor deposition, or plasma enhanced chemical vapor deposition.
Claim 15
Dependent Claim
10 words
The device of claim 6, further comprising an insulative layer.
Claim 16
Dependent Claim
87 words
A semiconductor device comprising: a semiconductive substrate layer; a conductive layer; and a barrier layer deposited at an interface between the semiconductive substrate layer and the conductive layer, wherein the barrier layer is formed of a composition comprising; a transition metal; aluminum; silicon; and nitrogen, wherein the composition comprises between about 30% and about 40% of the transition metal, between about 10% and about 20% of the aluminum, between about 0.5% and about 10% of the silicon, and between about 40% and about 50% of the nitrogen.
Claim 17
Dependent Claim
87 words
A semiconductor device comprising: a semiconductive substrate layer; a conductive layer; and a barrier layer deposited at an interface between the semiconductive substrate layer and the conductive layer, wherein the barrier layer is formed of a composition comprising; a transition metal; aluminum; silicon; and nitrogen, wherein the composition comprises between about 30% and about 40% of the transition metal, between about 10% and about 20% of the aluminum, between about 0.5% and about 10% of the silicon, and between about 40% and about 50% of the nitrogen.
Claim 18
Dependent Claim
14 words
The semiconductor device of claim 13, wherein the transition metal is titanium or tantalum.
Claim 19
Dependent Claim
11 words
The semiconductor device of claim 13, further comprising an insulative layer.
Claim 20
Dependent Claim
24 words
The semiconductor device of claim 13, wherein the barrier layer is deposited by reactive sputtering, chemical vapor deposition, or plasma enhanced chemical vapor deposition.
Claim 21
Dependent Claim
12 words
The semiconductor device of claim 13, wherein the conductive layer comprises aluminum.
Claim 22
Dependent Claim
16 words
The semiconductor device of claim 13, wherein the semiconductive substrate layer comprises silicon or silicon dioxide.
Claim 23
Dependent Claim
19 words
The semiconductor device of claim 13, wherein the thickness of the barrier layer is less than about 3000 Å.
Claim 24
Dependent Claim
22 words
The semiconductor device of claim 13, wherein the thickness of the barrier layer is between about 50 Å and about 3000 Å.
Claim 25
Dependent Claim
16 words
The semiconductor device of claim 13, wherein the semiconductive substrate layer comprises silicon or silicon dioxide.
Claim 26
Dependent Claim
19 words
The semiconductor device of claim 13, wherein the thickness of the barrier layer is less than about 3000 Å.
Claim 27
Dependent Claim
22 words
The semiconductor device of claim 13, wherein the thickness of the barrier layer is between about 50 Å and about 2000 Å.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2002-12-13 | 2003-06-14 | 2003-12-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-12-13 | 2007-06-14 | 2007-12-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-12-13 | 2011-06-14 | 2011-12-14 | $7700.00 | Window Closed / Lapsed |