US6054382A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of improving texture of metal films in semiconductor integrated circuits
Assignee: Texas Instruments Inc
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Filing: 1997-03-19
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Granted: 2000-04-25
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Expires: 2017-03-19
Abstract
Abstract A method is provided for improving the texture of a metal interconnect (32) in a semiconductor device (10). A first layer of titanium (24), a layer of titanium nitride (26), a second layer of titanium (28), and a metal film (30) are sequentially formed over an oxide layer (12). The second titanium layer (28) is preferably out 10-20 nm thick. Because the metal film (30) is formed over the second titanium layer (28), any metal interconnect (32) that is formed as a part of the metal film (30) has a strong (111) crystalline orientation. Furthermore, because the second titanium layer (28) is relatively thin, the metal film (30) and metal interconnect (32) are not completely transformed into a metal compound having a high electrical resistance.
Inventors
- 👤 Wei-Yung Hsu
- 👤 Qi-Zhong Hong
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:56
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
62 words
A method for improving the texture of a metal film in a semiconductor device, comprising the steps of: forming a first layer of titanium over an oxide layer of material; forming a layer of titanium nitride over said first titanium layer; forming a second layer of titanium over said titanium nitride layer; and forming a metal film over said second titanium layer.
Claim 2
Independent Claim
62 words
A method for improving the texture of a metal film in a semiconductor device, comprising the steps of: forming a first layer of titanium over an oxide layer of material; forming a layer of titanium nitride over said first titanium layer; forming a second layer of titanium over said titanium nitride layer; and forming a metal film over said second titanium layer.
Claim 3
Dependent Claim
14 words
The method of claim 1, wherein said metal film comprises a layer of aluminum.
Claim 4
Dependent Claim
32 words
The method claim 1, wherein said step of forming a metal film further comprises the step of depositing a metal layer by a chemical vapor deposition, high-temperature reflow, or high-pressure extrusion process.
Claim 5
Dependent Claim
30 words
The method of claim 1, wherein said step of forming a first titanium layer further comprises the step of depositing a layer of titanium by a chemical vapor deposition process.
Claim 6
Dependent Claim
14 words
The method of claim 1, wherein said metal film further comprises a metal interconnect.
Claim 7
Dependent Claim
35 words
The method of claim 1, wherein said step of forming a titanium nitride layer further comprises the step of depositing a layer of titanium nitride by a physical vapor deposition or chemical vapor deposition process.
Claim 8
Dependent Claim
30 words
The method of claim 1, wherein said step of forming a second titanium layer further comprises the step of depositing a layer of titanium by a physical vapor deposition process.
Claim 9
Dependent Claim
15 words
The method of claim 1, wherein said first titanium layer is approximately 20-100 nm thick.
Claim 10
Dependent Claim
15 words
The method of claim 1, wherein said titanium nitride layer is approximately 20-50 nm thick.
Claim 11
Dependent Claim
15 words
The method of claim 1, wherein said second titanium layer is approximately 10-20 nm thick.
Claim 12
Independent Claim
68 words
A method for improving the texture of a metal interconnect in a semiconductor device having an oxide layer with a via formed therein, comprising the steps of: forming a first layer of titanium in said via; forming a layer of titanium nitride over said first titanium layer; forming a second layer of titanium over said titanium nitride layer; and forming a metal interconnect over said second titanium layer.
Claim 13
Independent Claim
68 words
A method for improving the texture of a metal interconnect in a semiconductor device having an oxide layer with a via formed therein, comprising the steps of: forming a first layer of titanium in said via; forming a layer of titanium nitride over said first titanium layer; forming a second layer of titanium over said titanium nitride layer; and forming a metal interconnect over said second titanium layer.
Claim 14
Dependent Claim
33 words
The method of claim 11, wherein said step of forming a metal interconnect further comprises the step of depositing a metal layer by a chemical vapor deposition, high-temperature reflow, or high-pressure extrusion process.
Claim 15
Dependent Claim
30 words
The method of claim 11, wherein said step of forming a first titanium layer further comprises the step of depositing a layer of titanium by a chemical vapor deposition process.
Claim 16
Dependent Claim
35 words
The method of claim 11, wherein said step of forming a titanium nitride layer further comprises the step of depositing a layer of titanium nitride by a physical vapor deposition or chemical vapor deposition process.
Claim 17
Dependent Claim
30 words
The method of claim 11, wherein said step of forming a second titanium layer further comprises the step of depositing a layer of titanium by a physical vapor deposition process.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-04-25 | 2003-10-25 | 2004-04-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-04-25 | 2007-10-25 | 2008-04-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-04-25 | 2011-10-25 | 2012-04-25 | $7700.00 | Window Closed / Lapsed |