US5674787A
Expired / Lapsed
US
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Selective electroless copper deposited interconnect plugs for ULSI applications
Assignee: Cornell Research Foundation Inc
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Filing: 1996-01-16
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Granted: 1997-10-07
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Expires: 2016-01-16
Abstract
Abstract A method or utilizing electroless copper deposition to selectively form encapsulated copper plugs to connect conductive regions on a semiconductor. A via opening in an inter-level dielectric (ILD) provides a path for connecting two conductive regions separated by the ILD. Once the underlying metal layer is exposed by the via opening, a SiN or SiON dielectric encapsulation layer is formed along the sidewalls of the via. Then, a contact displacement technique is used to form a thin activation layer of copper on a barrier metal, such as TiN, which is present as a covering layer on the underlying metal layer. After the contact displacement of copper on the barrier layer at the bottom of the via, an electroless copper deposition technique is then used to auto-catalytically deposit copper in the via. The electroless copper deposition continues until the via is almost filled, but leaving sufficient room at the top in order to form an upper encapsulation layer. The SiN or SiON sidewalls, the bottom barrier layer and the cap barrier layer function to fully encapsulate the copper plug in the via. The plug is then annealed.
Inventors
- 👤 Bin Zhao
- 👤 Prahalad K. Vasudev
- 👤 Valery M. Dubin
- 👤 Yosef Shacham-Diamand
- 👤 Chiu H. Ting
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 06:27
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/074; H10W20/076; H10P; H10P14/00; H10P14/40; H10P14/46; H10W20/031; H10W20/032; H10W20/033; H10W20/037; H10W20/042; H10W20/044; H10W20/056; H10W20/057; Y; Y10; Y10S; Y10S977/00; Y10S977/70; Y10S977/81
Claims Analysis
Total Claims: 36
Claim 1
Independent Claim
153 words
A method of selectively forming an interconnect structure on a semiconductor wafer to couple a first conductive region to a second conductive region and in which said two conductive regions are separated by a dielectric layer, comprising the steps of: forming an opening in said dielectric layer to expose a first barrier layer overlying said first conductive region; depositing a dielectric barrier layer within said opening; anisotropically etching said dielectric barrier layer so that said dielectric barrier layer remains along sidewalls of said opening, but not atop said first barrier layer; activating a surface of said first barrier layer for autocatalytic growth of copper by forming a copper activation seed layer on said first barrier layer; subjecting said copper activation seed layer to an electroless deposition solution; depositing copper electrolessly on said first barrier layer by having said copper activation seed layer initiate said autocatalytic growth of copper to form said interconnect structure.
Claim 2
Independent Claim
153 words
A method of selectively forming an interconnect structure on a semiconductor wafer to couple a first conductive region to a second conductive region and in which said two conductive regions are separated by a dielectric layer, comprising the steps of: forming an opening in said dielectric layer to expose a first barrier layer overlying said first conductive region; depositing a dielectric barrier layer within said opening; anisotropically etching said dielectric barrier layer so that said dielectric barrier layer remains along sidewalls of said opening, but not atop said first barrier layer; activating a surface of said first barrier layer for autocatalytic growth of copper by forming a copper activation seed layer on said first barrier layer; subjecting said copper activation seed layer to an electroless deposition solution; depositing copper electrolessly on said first barrier layer by having said copper activation seed layer initiate said autocatalytic growth of copper to form said interconnect structure.
Claim 3
Dependent Claim
21 words
The method of claim 1 wherein said dielectric barrier layer is formed by depositing silicon nitride (SiN) or silicon oxynitride (SiON).
Claim 4
Dependent Claim
50 words
The method of claim 2 wherein said first barrier layer is a titanium nitride (TiN) layer or a tantalum (Ta) layer and wherein said first barrier layer is subjected to an aqueous copper contact displacement solution to activate its surface by contact displacement to form said copper activation seed layer.
Claim 5
Dependent Claim
37 words
The method of claim 3 wherein said aqueous copper contact displacement solution includes copper sulfate (CuSO 4 ) and hydrofluoric acid (HF) to provide necessary copper and fluorine ions for said contact displacement of copper to occur.
Claim 6
Dependent Claim
67 words
The method of claim 4 wherein said aqueous copper contact displacement solution is further comprised of 0.001-2 mol/liter of Cu +2 ions, 0.001-5 mol/liter of F - ions and 0.01-10 gm/liter of surfactant material mixed in deionized water and said step of subjecting said first barrier layer to said aqueous copper contact displacement solution occurs for approximately 1-600 seconds at an approximate temperature of 18-25 degrees C.
Claim 7
Dependent Claim
46 words
The method of claim 3 further including the step of depositing a cap metal barrier layer atop said electrolessly deposited copper to fully encapsulate said electrolessly deposited copper, said electrolessly deposited copper being surrounded by said first barrier layer, dielectric barrier layer and cap barrier layer.
Claim 8
Dependent Claim
29 words
The method of claim 6 wherein said cap metal barrier layer is formed by electrolessly depositing Ni, Co, Ni--Co alloy, CoP, NiCoP or NiP atop said electrolessly deposited copper.
Claim 9
Dependent Claim
46 words
The method of claim 2 further including the step of depositing a cap metal barrier layer atop said electrolessly deposited copper to fully encapsulate said electrolessly deposited copper, said electrolessly deposited copper being surrounded by said first barrier layer, dielectric barrier layer and cap barrier layer.
Claim 10
Dependent Claim
29 words
The method of claim 8 wherein said cap metal barrier layer is formed by electrolessly depositing Ni, Co, Ni--Co alloy, CoP, NiCoP or NiP atop said electrolessly deposited copper.
Claim 11
Independent Claim
159 words
A method of selectively forming an interconnect plug structure on a semiconductor wafer to interconnect a lower conductive layer to an upper conductive layer and in which said two conductive layers are separated by a dielectric layer, comprising the steps of: forming a via opening in said dielectric layer to expose a first barrier layer overlying said lower conductive layer; depositing conformally a dielectric barrier layer within said via opening; anisotropically etching said dielectric barrier layer so that said dielectric barrier layer remains along sidewalls of said via opening, but not atop said first barrier layer; activating a surface of said first barrier layer for autocatalytic growth of copper by forming a copper activation seed layer on said first barrier layer; subjecting said copper activation seed layer to an electroless deposition solution; depositing copper electrolessly on said first barrier layer by having said copper activation seed layer initiate said autocatalytic growth of copper to form said interconnect plug structure.
Claim 12
Independent Claim
159 words
A method of selectively forming an interconnect plug structure on a semiconductor wafer to interconnect a lower conductive layer to an upper conductive layer and in which said two conductive layers are separated by a dielectric layer, comprising the steps of: forming a via opening in said dielectric layer to expose a first barrier layer overlying said lower conductive layer; depositing conformally a dielectric barrier layer within said via opening; anisotropically etching said dielectric barrier layer so that said dielectric barrier layer remains along sidewalls of said via opening, but not atop said first barrier layer; activating a surface of said first barrier layer for autocatalytic growth of copper by forming a copper activation seed layer on said first barrier layer; subjecting said copper activation seed layer to an electroless deposition solution; depositing copper electrolessly on said first barrier layer by having said copper activation seed layer initiate said autocatalytic growth of copper to form said interconnect plug structure.
Claim 13
Dependent Claim
21 words
The method of claim 10 wherein said dielectric barrier layer is formed by depositing silicon nitride (SiN) or silicon oxynitride (SiON).
Claim 14
Dependent Claim
50 words
The method of claim 11 wherein said first barrier layer is a titanium nitride (TiN) layer or a tantalum (Ta) layer and wherein said first barrier layer is subjected to an aqueous copper contact displacement solution to activate its surface by contact displacement to form said copper activation seed layer.
Claim 15
Dependent Claim
46 words
The method of claim 12 further including the step of depositing a cap metal barrier layer atop said electrolessly deposited copper to fully encapsulate said electrolessly deposited copper, said electrolessly deposited copper being surrounded by said first barrier layer, dielectric barrier layer and cap barrier layer.
Claim 16
Dependent Claim
46 words
The method of claim 11 further including the step of depositing a cap metal barrier layer atop said electrolessly deposited copper to fully encapsulate said electrolessly deposited copper, said electrolessly deposited copper being surrounded by said first barrier layer, dielectric barrier layer and cap barrier layer.
Claim 17
Independent Claim
158 words
A method of selectively forming an interconnect structure on a semiconductor wafer to couple a first conductive region to a second conductive region and in which said two conductive regions are separated by a dielectric layer, comprising the steps of: forming an opening in said dielectric layer to expose said first conductive region; depositing a dielectric barrier layer within said opening; anisotropically etching said dielectric barrier layer so that said dielectric barrier layer remains along sidewalls of said opening, but not atop said first conductive region; activating a surface of said first conductive region for electroless growth of a barrier metal; subjecting said surface of said conductive region to a first electroless deposition solution to deposit a bottom metal barrier layer in said opening and atop said first conductive region; subjecting said bottom barrier layer to a second electroless deposition solution to electrolessly deposit copper; depositing copper electrolessly on said bottom barrier layer to form said interconnect structure.
Claim 18
Independent Claim
158 words
A method of selectively forming an interconnect structure on a semiconductor wafer to couple a first conductive region to a second conductive region and in which said two conductive regions are separated by a dielectric layer, comprising the steps of: forming an opening in said dielectric layer to expose said first conductive region; depositing a dielectric barrier layer within said opening; anisotropically etching said dielectric barrier layer so that said dielectric barrier layer remains along sidewalls of said opening, but not atop said first conductive region; activating a surface of said first conductive region for electroless growth of a barrier metal; subjecting said surface of said conductive region to a first electroless deposition solution to deposit a bottom metal barrier layer in said opening and atop said first conductive region; subjecting said bottom barrier layer to a second electroless deposition solution to electrolessly deposit copper; depositing copper electrolessly on said bottom barrier layer to form said interconnect structure.
Claim 19
Dependent Claim
21 words
The method of claim 15 wherein said dielectric barrier layer is formed by depositing silicon nitride (SiN) or silicon oxynitride (SiON).
Claim 20
Dependent Claim
41 words
The method of claim 16 wherein said first conductive region is comprised of aluminum (Al) and wherein a surface of said Al is first activated and then subjected to said first electroless deposition solution to deposit said bottom metal barrier layer.
Claim 21
Dependent Claim
24 words
The method of claim 17 wherein said bottom metal barrier layer is formed by electrolessly depositing Ni, Co, Ni--Co alloy, CoP, NiCoP or NiP.
Claim 22
Dependent Claim
46 words
The method of claim 18 further including the step of depositing a cap metal barrier layer atop said electrolessly deposited copper to fully encapsulate said electrolessly deposited copper, said electrolessly deposited copper being surrounded by said bottom barrier layer, dielectric barrier layer and cap barrier layer.
Claim 23
Dependent Claim
29 words
The method of claim 19 wherein said cap metal barrier layer is formed by electrolessly depositing Ni, Co, Ni--Co alloy, CoP, NiCoP or NiP atop said electrolessly deposited copper.
Claim 24
Dependent Claim
46 words
The method of claim 16 further including the step of depositing a cap metal barrier layer atop said electrolessly deposited copper to fully encapsulate said electrolessly deposited copper, said electrolessly deposited copper being surrounded by said bottom barrier layer, dielectric barrier layer and cap barrier layer.
Claim 25
Dependent Claim
29 words
The method of claim 21 wherein said cap metal barrier layer is formed by electrolessly depositing Ni, Co, Ni--Co alloy, CoP, NiCoP or NiP atop said electrolessly deposited copper.
Claim 26
Dependent Claim
32 words
The method of claim 17 further including the step of activating said bottom barrier layer for electroless copper deposition prior to subjecting said bottom barrier layer to said second electroless deposition solution.
Claim 27
Independent Claim
169 words
A method of selectively forming an interconnect plug structure on a semiconductor wafer to interconnect a lower conductive layer to an upper conductive layer and in which said two conductive layers are separated by a dielectric layer, comprising the steps of: forming a via opening in said dielectric layer to expose said lower conductive layer; depositing conformally a dielectric barrier layer within said via opening; anisotropically etching said dielectric barrier layer so that said dielectric barrier layer remains along sidewalls of said via opening, but not atop said lower conductive layer; activating a surface of said lower conductive layer for electroless growth of a barrier metal; subjecting said surface of said lower conductive layer to a first electroless deposition solution to deposit a bottom metal barrier layer in said via opening and atop said bottom barrier lower conductive layer; subjecting said bottom barrier layer to a second electroless deposition solution to electrolessly deposit copper; depositing copper electrolessly on said bottom metal barrier layer to form said interconnect plug structure.
Claim 28
Independent Claim
169 words
A method of selectively forming an interconnect plug structure on a semiconductor wafer to interconnect a lower conductive layer to an upper conductive layer and in which said two conductive layers are separated by a dielectric layer, comprising the steps of: forming a via opening in said dielectric layer to expose said lower conductive layer; depositing conformally a dielectric barrier layer within said via opening; anisotropically etching said dielectric barrier layer so that said dielectric barrier layer remains along sidewalls of said via opening, but not atop said lower conductive layer; activating a surface of said lower conductive layer for electroless growth of a barrier metal; subjecting said surface of said lower conductive layer to a first electroless deposition solution to deposit a bottom metal barrier layer in said via opening and atop said bottom barrier lower conductive layer; subjecting said bottom barrier layer to a second electroless deposition solution to electrolessly deposit copper; depositing copper electrolessly on said bottom metal barrier layer to form said interconnect plug structure.
Claim 29
Dependent Claim
21 words
The method of claim 24 wherein said dielectric barrier layer is formed by depositing silicon nitride (SiN) or silicon oxynitride (SiON).
Claim 30
Dependent Claim
41 words
The method of claim 25 wherein said lower conductive layer is comprised of aluminum (Al) and wherein a surface of said Al is first activated and then subjected to said first electroless deposition solution to deposit said bottom metal barrier layer.
Claim 31
Dependent Claim
24 words
The method of claim 26 wherein said bottom metal barrier layer is formed by electrolessly depositing Ni, Co, Ni--Co alloy, CoP, NiCoP or NiP.
Claim 32
Dependent Claim
46 words
The method of claim 27 further including the step of depositing a cap metal barrier layer atop said electrolessly deposited copper to fully encapsulate said electrolessly deposited copper, said electrolessly deposited copper being surrounded by said bottom barrier layer, dielectric barrier layer and cap barrier layer.
Claim 33
Dependent Claim
29 words
The method of claim 28 wherein said cap metal barrier layer is formed by electrolessly depositing Ni, Co, Ni--Co alloy, CoP, NiCoP or NiP atop said electrolessly deposited copper.
Claim 34
Dependent Claim
46 words
The method of claim 25 further including the step of depositing a cap metal barrier layer atop said electrolessly deposited copper to fully encapsulate said electrolessly deposited copper, said electrolessly deposited copper being surrounded by said bottom barrier layer, dielectric barrier layer and cap barrier layer.
Claim 35
Dependent Claim
29 words
The method of claim 30 wherein said cap metal barrier layer is formed by electrolessly depositing Ni, Co, Ni--Co alloy, CoP, NiCoP or NiP atop said electrolessly deposited copper.
Claim 36
Dependent Claim
32 words
The method of claim 26 further including the step of activating said bottom barrier layer for electroless copper deposition prior to subjecting said bottom barrier layer to said second electroless deposition solution.
References Cited (Backward Citations)
US4574095A
Cited
US4789648A
Cited
US4985750A
Cited
US4894260A
Cited
US5151168A
Cited
US5240497A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-10-06 | 2001-04-07 | 2001-10-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-10-06 | 2005-04-07 | 2005-10-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-10-06 | 2009-04-07 | 2009-10-07 | $7700.00 | Window Closed / Lapsed |