Contact structure for memory device

Claim 2

A memory structure comprising: a contact plug extending to a top surface at a first height above a semiconductive substrate and making contact thereto; a barrier layer on the top surface of the contact plug, the barrier layer including a layer of titanium silicide and a layer of titanium nitride; and a storage node having a second height above said semiconductive substrate, wherein said second height is less than said first height, wherein the specific resistivity of the contact plug and the storage node is substantially the same, wherein the portion of the contact plug that extends above the storage node is wider than the portion of the contact plug that does not extend above the storage node.

Claim 3

A memory structure according to claim 1 , wherein the portion of the contact plug that extends above the storage node has a first width and a second width, wherein the first width is wider than the second width.

Claim 4

A memory structure according to claim 2 , wherein the portion of the contact plug having the first width is upon the portion of the contact plug having the second width.

Claim 5

A memory structure according to claim 1 , wherein the layer of titanium nitride has a thickness in a range from about 100 Angstroms to about 200 Angstroms.

Claim 6

The memory structure according to claim 1 , wherein the barrier layer also includes a layer of titanium between the layer of titanium nitride and the layer of titanium silicide.

Claim 7

A memory structure according to claim 5 , wherein the layer of titanium has a thickness in a range from about 150 Angstroms to about 250 Angstroms.

Claim 8

An electrical device comprising: a pair of gate stacks situated upon a semiconductor substrate; a pair of capacitors each upon a respective one of said gate stacks; a contact plug having a width, projecting from an active area in the semiconductor substrate between the pair of gate stacks, and terminating above the capacitors at a trench, wherein the trench is defined in part by an electrically insulative material and has a width that is greater the width of the contact plug; an electrically conductive material within the trench, wherein the contact plug is separated from the electrically conductive material within the trench by a barrier layer, the barrier layer including a layer of titanium silicide and a layer of titanium nitride.

Claim 9

An electrical device comprising: a pair of gate stacks situated upon a semiconductor substrate; a pair of capacitors each upon a respective one of said gate stacks; a contact plug having a width, projecting from an active area in the semiconductor substrate between the pair of gate stacks, and terminating above the capacitors at a trench, wherein the trench is defined in part by an electrically insulative material and has a width that is greater the width of the contact plug; an electrically conductive material within the trench, wherein the contact plug is separated from the electrically conductive material within the trench by a barrier layer, the barrier layer including a layer of titanium silicide and a layer of titanium nitride.

Claim 10

The electrical device as defined in claim 7 , wherein the electrically conductive material has a top surface that is co-planar to a top surface of the electrically insulative material.

Claim 11

A electrical device according to claim 7 , wherein the layer of titanium nitride has a thickness in a range from about 100 Angstroms to about 200 Angstroms.

Claim 12

A electrical device according to claim 7 , wherein the barrier layer also includes a layer of titanium between the layer of titanium nitride and the layer of titanium silicide.

Claim 13

A electrical device according to claim 10 , wherein the layer of titanium has a thickness in a range from about 150 Angstroms to about 250 Angstroms.

Claim 14

A electrical device according to claim 7 , wherein each capacitor has a storage node that is composed of the same material that the contact plug is composed of.

Claim 15

A contact structure comprising: a pair of gate stacks situated upon a semiconductor substrate; a pair of capacitors each upon a respective one of said gate stacks, each capacitor having a storage node that is composed of polysilicon; a contact plug: composed of polysilicon; having a width; projecting from an active area in the semiconductor substrate between the pair of gate stacks; and terminating above the capacitors at a trench, wherein the trench is defined in part by an electrically insulative material and has a width that is greater the width of the contact plug; a barrier layer within the trench and upon the contact plug, the barrier layer including a layer of titanium silicide and a layer of titanium nitride; an electrically conductive material on the barrier layer within the trench and being selected from the group consisting of aluminum, tungsten, and an alloy of aluminum.

Claim 16

A contact structure comprising: a pair of gate stacks situated upon a semiconductor substrate; a pair of capacitors each upon a respective one of said gate stacks, each capacitor having a storage node that is composed of polysilicon; a contact plug: composed of polysilicon; having a width; projecting from an active area in the semiconductor substrate between the pair of gate stacks; and terminating above the capacitors at a trench, wherein the trench is defined in part by an electrically insulative material and has a width that is greater the width of the contact plug; a barrier layer within the trench and upon the contact plug, the barrier layer including a layer of titanium silicide and a layer of titanium nitride; an electrically conductive material on the barrier layer within the trench and being selected from the group consisting of aluminum, tungsten, and an alloy of aluminum.

Claim 17

A electrical device according to claim 13 , wherein the layer of titanium nitride has a thickness in a range from about 100 Angstroms to about 200 Angstroms.

Claim 18

A electrical device according to claim 13 , wherein the barrier layer also includes a layer of titanium between the layer of titanium nitride and the layer of titanium silicide.

Claim 19

A electrical device according to claim 15 , wherein the layer of titanium has a thickness in a range from about 150 Angstroms to about 250 Angstroms.

Claim 20

The contact structure as defined in claim 13 , wherein the electrically conductive material has a top surface that is co-planar with a top surface of the electrically insulative material.