US6498358B1
Expired / Lapsed
US
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Structure and method for fabricating an electro-optic system having an electrochromic diffraction grating
Assignee: Google Technology Holdings LLC
•
Filing: 2001-07-20
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Granted: 2002-12-24
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Expires: 2021-07-20
Abstract
Abstract A semiconductor structure for implementing optical beam switching includes a monocrystalline silicon substrate and an amorphous oxide material overlying the monocrystalline silicon substrate. A monocrystalline perovskite oxide material overlies the amorphous oxide material and a monocrystalline compound semiconductor material overlies the monocrystalline perovskite oxide material. An optical source component that is operable to transmit radiant energy is formed within the monocrystalline compound semiconductor layer. A diffraction grating including an electrochromic portion is optically coupled to the optical source component.
Inventors
- 👤 Lawrence E. Lach
- 👤 Robert Lempkowski
- 👤 Tomasz L. Klosowiak
- 👤 Keryn Lian
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 14:55
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/29; G02F1/292; G02F1/01; G02F1/015; G02F1/025; H; H10; H10D; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0158; H10D84/0165; H10D84/0193; H10D84/02; H10D84/08; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3238; H10P14/34; H10P14/3402
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
74 words
A semiconductor structure comprising: a monocrystalline silicon substrate; an amorphous oxide material overlying the monocrystalline silicon substrate; a monocrystalline perovskite oxide material overlying the amorphous oxide material; a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material; an optical source component formed within the monocrystalline compound semiconductor layer, the optical source component being operable to transmit radiant energy; and a diffraction grating including an electrochromic portion optically coupled to the optical source component.
Claim 2
Dependent Claim
74 words
A semiconductor structure comprising: a monocrystalline silicon substrate; an amorphous oxide material overlying the monocrystalline silicon substrate; a monocrystalline perovskite oxide material overlying the amorphous oxide material; a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material; an optical source component formed within the monocrystalline compound semiconductor layer, the optical source component being operable to transmit radiant energy; and a diffraction grating including an electrochromic portion optically coupled to the optical source component.
Claim 3
Dependent Claim
17 words
The semiconductor structure of claim 1 , wherein the electrochromic portion comprises a plurality of electrochromic sections.
Claim 4
Dependent Claim
26 words
The semiconductor structure of claim 2 , wherein each of the plurality of electrochromic sections can be selectively placed in one of first and second states.
Claim 5
Dependent Claim
72 words
The semiconductor structure of claim 3 , wherein placing a selected one of the plurality of electrochromic sections in the first state permits a first amount of transmitted radiant energy to pass through the selected electrochromic section and placing the selected electrochromic section in the second state permits a second amount of transmitted radiant energy to pass through the selected electrochromic section where the second amount is greater than the first amount.
Claim 6
Dependent Claim
47 words
The semiconductor structure of claim 3 , wherein the plurality of electrochromic sections comprise first and second predefined electrochromic section sets where placing the first electrochromic section set in the first state and placing the second electrochromic section set in the second state define an aperture configuration.
Claim 7
Dependent Claim
27 words
The semiconductor structure of claim 5 , further comprising an optical detector component operable to be optically coupled to the optical source component via the aperture configuration.
Claim 8
Dependent Claim
20 words
The semiconductor structure of claim 6 , wherein the optical detector component is formed within the monocrystalline compound semiconductor material.
Claim 9
Dependent Claim
23 words
The semiconductor structure of claim 2 , wherein a selected one of the plurality of electrochromic sections comprises a first electrochromic material layer.
Claim 10
Dependent Claim
26 words
The semiconductor structure of claim 8 , wherein the first electrochromic material layer comprises one of a cathodic material, an anodic material and a cathodic/anodic material.
Claim 11
Dependent Claim
23 words
The semiconductor structure of claim 8 , wherein the first electrochromic material layer is disposed between first and second transparent electrically conductive layers.
Claim 12
Dependent Claim
27 words
The semiconductor structure of claim 8 , wherein the first electrochromic section comprises a transparent substrate selected from one of an organic polymer and a ceramic material.
Claim 13
Dependent Claim
21 words
The semiconductor structure of claim 8 , wherein the first electrochromic material layer is disposed between first and second transparent substrates.
Claim 14
Dependent Claim
36 words
The semiconductor structure of claim 8 , further including an ion conductor layer and an ion storage layer wherein the ion conductor layer is disposed between the first electrochromic material layer and the ion storage layer.
Claim 15
Dependent Claim
18 words
The semiconductor structure of claim 13 , wherein the ion storage layer comprises a second electrochromic material layer.
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