US6429127B1
Expired / Lapsed
US
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Methods for forming rough ruthenium-containing layers and structures/methods using same
Assignee: Micron Technology Inc
•
Filing: 2000-06-08
•
Granted: 2002-08-06
•
Expires: 2020-06-08
Abstract
Abstract A method for forming a rough ruthenium-containing layer on the surface of a substrate assembly includes providing a ruthenium-containing precursor into the reaction chamber. A rough ruthenium layer may be deposited on the surface of the substrate assembly at a rate of about 100 Å/minute to about 500 Å/minute using the ruthenium-containing precursor. Further, a rough ruthenium oxide layer may be formed by providing a ruthenium-containing precursor and an oxygen-containing precursor into the reaction chamber to deposit the rough ruthenium oxide layer on the surface of the substrate assembly at a rate of about 100 Å/minute to about 1200 Å/minute. An anneal of the layers may be performed to further increase the roughness. In addition, conductive structures including a rough ruthenium layer or a rough ruthenium oxide layer are provided. Such layers may be used in conjunction with non-rough ruthenium and/or non-rough ruthenium oxide layers to form conductive structures. For example, such structures may be part of a capacitor structure, e.g., bottom electrode of a capacitor.
Inventors
- 👤 Garo Derderian
- 👤 Vishnu K. Agarwal
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:29
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/711; H10D1/712; H10P; H10P95/00; H10D1/694; H10D1/696; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10D1/682
Claims Analysis
Total Claims: 43
Claim 1
Independent Claim
118 words
A method for forming a rough conductive layer in the fabrication of integrated circuits, the method comprising: providing a substrate assembly in a reaction chamber, the substrate assembly including a surface; maintaining the substrate assembly surface at a temperature in a range of about 100° C. to about 400° C.; maintaining the pressure of the reaction chamber in a range of about 0.4 torr to about 10 torr; and providing a carrier gas at a flow rate of about 100 sccm to about 500 sccm through a ruthenium-containing precursor maintained at a temperature of about 15° C. to about 100° C. into the reaction chamber to deposit a rough ruthenium layer on the surface of the substrate assembly.
Claim 2
Independent Claim
118 words
A method for forming a rough conductive layer in the fabrication of integrated circuits, the method comprising: providing a substrate assembly in a reaction chamber, the substrate assembly including a surface; maintaining the substrate assembly surface at a temperature in a range of about 100° C. to about 400° C.; maintaining the pressure of the reaction chamber in a range of about 0.4 torr to about 10 torr; and providing a carrier gas at a flow rate of about 100 sccm to about 500 sccm through a ruthenium-containing precursor maintained at a temperature of about 15° C. to about 100° C. into the reaction chamber to deposit a rough ruthenium layer on the surface of the substrate assembly.
Claim 3
Dependent Claim
27 words
The method of claim 1 , wherein the method further includes providing a diluent gas at a flow rate of about 100 sccm to about 500 sccm.
Claim 4
Dependent Claim
35 words
The method of claim 1 , wherein maintaining the substrate assembly surface at a temperature includes maintaining the substrate assembly surface at a temperature in the range of about 150° C. to about 250° C.
Claim 5
Dependent Claim
24 words
The method of claim 1 , wherein the rough ruthenium layer is deposited at a rate of about 100 Å/minute to about 500 Å/minute.
Claim 6
Dependent Claim
24 words
The method of claim 4 , wherein the rough ruthenium layer is deposited at a rate of about 200 Å/minute to about 300 Å/minute.
Claim 7
Dependent Claim
27 words
The method of claim 4 , wherein the RMS roughness of the rough ruthenium layer is in a range of about 50 Å to about 600 Å.
Claim 8
Dependent Claim
34 words
The method of claim 4 , wherein a nominal center cross-section area of grains at a surface of the rough ruthenium layer is in a range of about 100 Å to about 800 Å.
Claim 9
Dependent Claim
45 words
The method of claim 1 , wherein the method further includes annealing the rough ruthenium layer at a temperature in a range of about 300° C. to about 900° C. for a time period in a range of about 30 seconds to about 30 minutes.
Claim 10
Dependent Claim
52 words
The method of claim 8 , wherein annealing the rough ruthenium layer further includes annealing the rough ruthenium layer at a pressure in a range of about 0.1 millitorr to about 5 atmospheres in a gas atmosphere subjected to a glow discharge created by applying an electromagnetic field across the gas mixture.
Claim 11
Dependent Claim
56 words
The method of claim 9 , wherein the gas atmosphere is selected from one of oxygen, ozone, nitrogen, argon or a combination thereof, and further wherein the glow discharge is created by applying a radio frequency electromagnetic field of 13.56 megahertz at a power density of 0 to about 5 kW/cm 2 across the gas atmosphere.
Claim 12
Independent Claim
62 words
A method for forming a rough conductive layer in the fabrication of integrated circuits, the method comprising: providing a substrate assembly in a reaction chamber, the substrate assembly including a surface; providing a ruthenium-containing precursor into the reaction chamber; depositing a rough ruthenium layer on the surface of the substrate assembly at a rate of about 100 Å/minute to about 500 Å/minute.
Claim 13
Independent Claim
62 words
A method for forming a rough conductive layer in the fabrication of integrated circuits, the method comprising: providing a substrate assembly in a reaction chamber, the substrate assembly including a surface; providing a ruthenium-containing precursor into the reaction chamber; depositing a rough ruthenium layer on the surface of the substrate assembly at a rate of about 100 Å/minute to about 500 Å/minute.
Claim 14
Dependent Claim
24 words
The method of claim 11 , wherein the rough ruthenium layer is deposited at a rate of about 200 Å/minute to about 300 Å/minute.
Claim 15
Dependent Claim
66 words
The method of claim 11 , wherein providing a ruthenium-containing precursor into the reaction chamber includes providing a carrier gas at a flow rate of about 100 sccm to about 500 sccm through the ruthenium-containing precursor maintained at a temperature of about 15° C. to about 100° C. and into the reaction chamber to deposit the rough ruthenium layer on the surface of the substrate assembly.
Claim 16
Dependent Claim
30 words
The method of claim 11 , wherein the method further includes maintaining the substrate assembly surface at a temperature in a range of about 100° C. to about 400° C.
Claim 17
Dependent Claim
29 words
The method of claim 11 , wherein the method further includes maintaining the pressure of the reaction chamber in a range of about 0.4 torr to about 10 torr.
Claim 18
Dependent Claim
45 words
The method of claim 11 , wherein the method further includes annealing the rough ruthenium layer at a temperature in a range of about 300° C. to about 900° C. for a time period in a range of about 30 seconds to about 30 minutes.
Claim 19
Dependent Claim
51 words
The method of claim 16 wherein annealing the rough ruthenium layer further includes annealing the rough ruthenium layer at a pressure in a range of about 0.1 millitorr to about 5 atmospheres in a gas atmosphere subjected to a glow discharge created by applying an electromagnetic field across the gas mixture.
Claim 20
Dependent Claim
26 words
The method of claim 11 , wherein providing the substrate assembly surface includes providing non-rough ruthenium, the rough layer of ruthenium formed on the non-rough ruthenium.
Claim 21
Dependent Claim
28 words
The method of claim 11 , wherein providing the substrate assembly surface includes providing non-rough ruthenium oxide, the rough layer of ruthenium formed on the non-rough ruthenium oxide.
Claim 22
Independent Claim
94 words
A method for forming a rough conductive layer in the fabrication of integrated circuits, the method comprising: providing a substrate assembly in a reaction chamber, the substrate assembly including a surface; providing a ruthenium-containing precursor into the reaction chamber; providing an oxygen-containing precursor into the reaction chamber; and depositing a rough ruthenium oxide layer on the surface of the substrate assembly at a rate of about 100 Å/minute to about 1200 Å/minute, wherein the RMS roughness of the rough ruthenium oxide layer is in a range of about 50 Å to about 600 Å.
Claim 23
Independent Claim
94 words
A method for forming a rough conductive layer in the fabrication of integrated circuits, the method comprising: providing a substrate assembly in a reaction chamber, the substrate assembly including a surface; providing a ruthenium-containing precursor into the reaction chamber; providing an oxygen-containing precursor into the reaction chamber; and depositing a rough ruthenium oxide layer on the surface of the substrate assembly at a rate of about 100 Å/minute to about 1200 Å/minute, wherein the RMS roughness of the rough ruthenium oxide layer is in a range of about 50 Å to about 600 Å.
Claim 24
Dependent Claim
25 words
The method of claim 20 , wherein the rough ruthenium oxide layer is deposited at a rate of about 300 Å/minute to about 600 Å/minute.
Claim 25
Dependent Claim
29 words
The method of claim 21 , wherein the method further includes maintaining the pressure of the reaction chamber in a range of about 0.4 torr to about 100 torr.
Claim 26
Dependent Claim
85 words
The method of claim 20 , wherein providing a ruthenium-containing precursor into the reaction chamber includes providing a carrier gas at a flow rate of about 100 sccm to about 500 sccm through the ruthenium-containing precursor maintained at a temperature of about 15° C. to about 100° C. and into the reaction chamber, and further wherein providing the oxygen-containing precursor into the reaction chamber includes providing an oxygen-containing precursor into the reaction chamber at a flow rate of about 100 sccm to about 2000 sccm.
Claim 27
Dependent Claim
30 words
The method of claim 23 , wherein the method further includes maintaining the substrate assembly surface at a temperature in a range of about 100° C. to about 400° C.
Claim 28
Dependent Claim
28 words
The method of claim 20 , wherein providing the substrate assembly surface includes providing non-rough ruthenium, the rough layer of ruthenium oxide is formed on the non-rough ruthenium.
Claim 29
Independent Claim
101 words
A method for forming a rough conductive layer in the fabrication of integrated circuits, the method comprising: providing a substrate assembly in a reaction chamber, the substrate assembly including a surface; providing a ruthenium-containing precursor into the reaction chamber; providing an oxygen-containing precursor into the reaction chamber; and depositing a rough ruthenium oxide layer on the surface of the substrate assembly at a rate of about 100 Å/minute to about 1200 Å/minute, wherein a nominal center cross-section area of grains at a surface of the rough ruthenium oxide layer is in a range of about 100 Å to about 800 Å.
Claim 30
Independent Claim
101 words
A method for forming a rough conductive layer in the fabrication of integrated circuits, the method comprising: providing a substrate assembly in a reaction chamber, the substrate assembly including a surface; providing a ruthenium-containing precursor into the reaction chamber; providing an oxygen-containing precursor into the reaction chamber; and depositing a rough ruthenium oxide layer on the surface of the substrate assembly at a rate of about 100 Å/minute to about 1200 Å/minute, wherein a nominal center cross-section area of grains at a surface of the rough ruthenium oxide layer is in a range of about 100 Å to about 800 Å.
Claim 31
Dependent Claim
25 words
The method of claim 26 , wherein the rough ruthenium oxide layer is deposited at a rate of about 300 Å/minute to about 600 Å/minute.
Claim 32
Dependent Claim
29 words
The method of claim 27 , wherein the method further includes maintaining the pressure of the reaction chamber in a range of about 0.4 torr to about 100 torr.
Claim 33
Dependent Claim
85 words
The method of claim 26 , wherein providing a ruthenium-containing precursor into the reaction chamber includes providing a carrier gas at a flow rate of about 100 sccm to about 500 sccm through the ruthenium-containing precursor maintained at a temperature of about 15° C. to about 100° C. and into the reaction chamber, and further wherein providing the oxygen-containing precursor into the reaction chamber includes providing an oxygen-containing precursor into the reaction chamber at a flow rate of about 100 sccm to about 2000 sccm.
Claim 34
Dependent Claim
30 words
The method of claim 29 , wherein the method further includes maintaining the substrate assembly surface at a temperature in a range of about 100° C. to about 400° C.
Claim 35
Dependent Claim
28 words
The method of claim 26 , wherein providing the substrate assembly surface includes providing non-rough ruthenium, the rough layer of ruthenium oxide is formed on the non-rough ruthenium.
Claim 36
Independent Claim
130 words
A method for forming a rough conductive layer in the fabrication of integrated circuits, the method comprising: providing a substrate assembly in a reaction chamber, the substrate assembly including a surface; providing a ruthenium-containing precursor into the reaction chamber; providing an oxygen-containing precursor into the reaction chamber; and depositing a rough ruthenium oxide layer on the surface of the substrate assembly at a rate of about 100 Å/minute to about 1200 Å/minute, wherein the method further includes annealing the rough ruthenium oxide layer at a temperature in a range of about 300° C. to about 900° C. for a time period in a range of about 30 seconds to about 30 minutes in a gas atmosphere subjected to a glow discharge created by applying an electromagnetic field across the gas.
Claim 37
Independent Claim
130 words
A method for forming a rough conductive layer in the fabrication of integrated circuits, the method comprising: providing a substrate assembly in a reaction chamber, the substrate assembly including a surface; providing a ruthenium-containing precursor into the reaction chamber; providing an oxygen-containing precursor into the reaction chamber; and depositing a rough ruthenium oxide layer on the surface of the substrate assembly at a rate of about 100 Å/minute to about 1200 Å/minute, wherein the method further includes annealing the rough ruthenium oxide layer at a temperature in a range of about 300° C. to about 900° C. for a time period in a range of about 30 seconds to about 30 minutes in a gas atmosphere subjected to a glow discharge created by applying an electromagnetic field across the gas.
Claim 38
Dependent Claim
25 words
The method of claim 32 , wherein the rough ruthenium oxide layer is deposited at a rate of about 300 Å/minute to about 600 Å/minute.
Claim 39
Dependent Claim
85 words
The method of claim 33 , wherein providing a ruthenium-containing precursor into the reaction chamber includes providing a carrier gas at a flow rate of about 100 sccm to about 500 sccm through the ruthenium-containing precursor maintained at a temperature of about 15° C. to about 100° C. and into the reaction chamber, and further wherein providing the oxygen-containing precursor into the reaction chamber includes providing an oxygen-containing precursor into the reaction chamber at a flow rate of about 100 sccm to about 2000 sccm.
Claim 40
Dependent Claim
85 words
The method of claim 32 , wherein providing a ruthenium-containing precursor into the reaction chamber includes providing a carrier gas at a flow rate of about 100 sccm to about 500 sccm through the ruthenium-containing precursor maintained at a temperature of about 15° C. to about 100° C. and into the reaction chamber, and further wherein providing the oxygen-containing precursor into the reaction chamber includes providing an oxygen-containing precursor into the reaction chamber at a flow rate of about 100 sccm to about 2000 sccm.
Claim 41
Dependent Claim
30 words
The method of claim 35 , wherein the method further includes maintaining the substrate assembly surface at a temperature in a range of about 100° C. to about 400° C.
Claim 42
Dependent Claim
35 words
The method of claim 32 , wherein annealing the rough ruthenium oxide layer further includes annealing the rough ruthenium oxide layer at a pressure in a range of about 0.1 millitorr to about 5 atmospheres.
Claim 43
Dependent Claim
28 words
The method of claim 32 , wherein providing the substrate assembly surface includes providing non-rough ruthenium, the rough layer of ruthenium oxide is formed on the non-rough ruthenium.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-08-05 | 2006-02-04 | 2006-08-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-08-05 | 2010-02-04 | 2010-08-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-08-05 | 2014-02-04 | 2014-08-06 | $7700.00 | Window Closed / Lapsed |